2N7002AQ-7
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Diodes Incorporated 2N7002AQ-7

Manufacturer No:
2N7002AQ-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 180MA SOT23
Delivery:
Payment:
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Product Introduction

Overview

The 2N7002AQ-7 is an N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is specifically designed to meet the stringent requirements of automotive applications and is qualified to AEC-Q101 standards. It is manufactured in IATF 16949 certified facilities and is supported by a PPAP (Production Part Approval Process). The 2N7002AQ-7 is known for its low on-resistance, low gate threshold voltage, and fast switching speed, making it an ideal choice for various power management and motor control applications.

Key Specifications

CharacteristicSymbolValueUnits
Drain-Source VoltageVDSS60V
Gate-Source VoltageVGSS±20V
Continuous Drain Current (VGS = 10V, TA = +25°C)ID180mA
Continuous Drain Current (VGS = 10V, TA = +85°C)ID130mA
Continuous Drain Current (VGS = 10V, TA = +100°C)ID115mA
Maximum Continuous Body Diode Forward CurrentIS220mA
Pulsed Drain Current (10µs pulse, duty cycle = 1%)IDM800mA
Total Power Dissipation (TA = +25°C)PD370mW
Thermal Resistance, Junction to AmbientRθJA348°C/W
On-Resistance (VGS = 5V)RDS(ON)6Ω
Gate Threshold VoltageVGS(TH)1.0 - 2.5V
PackageSOT23

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package (SOT23)
  • ESD Protected Gate, 1.2kV HBM
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device

Applications

The 2N7002AQ-7 is ideal for use in various automotive and industrial applications, including:

  • Motor Control
  • Power Management Functions

Q & A

  1. What is the maximum drain-source voltage of the 2N7002AQ-7?
    The maximum drain-source voltage (VDSS) is 60V.
  2. What is the typical on-resistance of the 2N7002AQ-7 at VGS = 5V?
    The typical on-resistance (RDS(ON)) at VGS = 5V is 6Ω.
  3. What are the continuous drain current ratings at different temperatures?
    The continuous drain current (ID) is 180mA at TA = +25°C, 130mA at TA = +85°C, and 115mA at TA = +100°C.
  4. Is the 2N7002AQ-7 RoHS compliant?
    Yes, the 2N7002AQ-7 is totally lead-free and fully RoHS compliant.
  5. What is the package type of the 2N7002AQ-7?
    The package type is SOT23.
  6. What are the key applications of the 2N7002AQ-7?
    The key applications include motor control and power management functions.
  7. Is the 2N7002AQ-7 ESD protected?
    Yes, the gate is ESD protected with a 1.2kV HBM rating.
  8. What is the thermal resistance, junction to ambient, of the 2N7002AQ-7?
    The thermal resistance, junction to ambient (RθJA), is 348°C/W.
  9. What is the maximum pulsed drain current of the 2N7002AQ-7?
    The maximum pulsed drain current (IDM) is 800mA for a 10µs pulse with a duty cycle of 1%.
  10. Is the 2N7002AQ-7 suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and suitable for automotive applications requiring specific change control.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:5Ohm @ 115mA, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:23 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
2N7002AQ-13
2N7002AQ-13
MOSFET N-CH 60V 180MA SOT23

Similar Products

Part Number 2N7002AQ-7 2N7002KQ-7 2N7002A-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 180mA (Ta) 380mA (Ta) 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 115mA, 10V 2Ohm @ 500mA, 10V 6Ohm @ 115mA, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2.5V @ 1mA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.3 nC @ 4.5 V -
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 23 pF @ 25 V 50 pF @ 25 V 23 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 370mW (Ta) 370mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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