2N7002K-7
  • Share:

Diodes Incorporated 2N7002K-7

Manufacturer No:
2N7002K-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 380MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002K-7 is a small signal N-Channel Enhancement Mode MOSFET produced by Diodes Incorporated. This device is designed for high-efficiency power management applications, featuring low on-state resistance, low input capacitance, and fast switching speeds. It is packaged in a SOT-23 (SC-59, TO-236) surface mount package, making it suitable for a variety of compact electronic designs. The MOSFET is also ESD protected up to 2kV, halogen-free, and fully RoHS compliant, ensuring environmental sustainability and reliability.

Key Specifications

Attribute Value Unit
FET Type N-Channel
Drain-to-Source Voltage (Vdss) 60 V
Drain-Source On Resistance (Rds(on)) 2 Ω @ Vgs = 10V
Rated Power Dissipation 370 mW
Gate Charge (Qg) 0.3 nC
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Maximum Drain Current (Id) 380 mA @ TA = +25°C
Operating and Storage Temperature Range -55 to +150 °C

Key Features

  • Low on-resistance (Rds(on)) of 2Ω at Vgs = 10V
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • ESD protected up to 2kV
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free, making it a “green” device

Applications

  • Power management functions
  • Motor controls
  • Low side load switch
  • Level shift circuits
  • DC-DC converters
  • Portable applications such as DSC, PDA, and cell phones
  • Backlighting

Q & A

  1. What is the maximum drain-to-source voltage (Vdss) of the 2N7002K-7 MOSFET?

    The maximum drain-to-source voltage (Vdss) is 60V.

  2. What is the typical on-resistance (Rds(on)) of the 2N7002K-7?

    The typical on-resistance (Rds(on)) is 2Ω at Vgs = 10V.

  3. What is the maximum drain current (Id) of the 2N7002K-7?

    The maximum drain current (Id) is 380mA at TA = +25°C.

  4. What is the package style of the 2N7002K-7?

    The package style is SOT-23 (SC-59, TO-236).

  5. Is the 2N7002K-7 ESD protected?

    Yes, the 2N7002K-7 is ESD protected up to 2kV.

  6. What are the operating and storage temperature ranges for the 2N7002K-7?

    The operating and storage temperature ranges are -55 to +150°C.

  7. Is the 2N7002K-7 RoHS compliant?

    Yes, the 2N7002K-7 is fully RoHS compliant.

  8. What are some common applications of the 2N7002K-7?

    Common applications include power management, motor controls, low side load switch, level shift circuits, DC-DC converters, and portable applications.

  9. What is the thermal resistance (RθJA) of the 2N7002K-7?

    The thermal resistance (RθJA) is 357 °C/W for steady state and 292 °C/W for t < 5s.

  10. Is the 2N7002K-7 halogen-free?

    Yes, the 2N7002K-7 is halogen-free and antimony-free, making it a “green” device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:0.3 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.24
1,961

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002K-7 2N7002KQ-7 2N7002W-7 2N7002T-7 2N7002-7 2N7002A-7 2N7002H-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Discontinued at Digi-Key Discontinued at Digi-Key Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 380mA (Ta) 380mA (Ta) 115mA (Ta) 115mA (Ta) 115mA (Ta) 180mA (Ta) 170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V 5V, 10V 5V, 10V 5V, 10V 5V
Rds On (Max) @ Id, Vgs 2Ohm @ 500mA, 10V 2Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V 7.5Ohm @ 50mA, 5V 7.5Ohm @ 50mA, 5V 6Ohm @ 115mA, 5V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA 2V @ 250µA 2V @ 250µA 2.5V @ 250µA 2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.3 nC @ 4.5 V 0.3 nC @ 4.5 V - - - - 0.35 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V 23 pF @ 25 V 26 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 370mW (Ta) 370mW (Ta) 200mW (Ta) 150mW (Ta) 370mW (Ta) 370mW (Ta) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-323 SOT-523 SOT-23-3 SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SOT-523 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
PSMN4R0-30YLDX
PSMN4R0-30YLDX
Nexperia USA Inc.
MOSFET N-CH 30V 95A LFPAK56
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD2HNK60Z
STD2HNK60Z
STMicroelectronics
MOSFET N-CH 600V 2A DPAK
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

BAT54A-7-F
BAT54A-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT23-3
BAV99BRW-7-F
BAV99BRW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAV23CQ-7-F
BAV23CQ-7-F
Diodes Incorporated
HIVOLT SWITCHING DIODE BVR > 100
BAS70-04-7
BAS70-04-7
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
MBR10100CDTR-G1
MBR10100CDTR-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO252
MUR160-T
MUR160-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
BZX84B5V6Q-7-F
BZX84B5V6Q-7-F
Diodes Incorporated
TIGHT TOLERANCE ZENER SOT23 T&R
BZT52HC3V6WF-7
BZT52HC3V6WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZX84C27-7-G
BZX84C27-7-G
Diodes Incorporated
DIODE ZENER
BCP5316QTA
BCP5316QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BSS123ATC
BSS123ATC
Diodes Incorporated
MOSFET N-CH 100V 170MA SOT23-3
74LVC1G08QSE-7
74LVC1G08QSE-7
Diodes Incorporated
IC GATE AND 1CH 2-INP SOT353