English
2N7002-7
  • Share:

Diodes Incorporated 2N7002-7

Manufacturer No:
2N7002-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-7-F is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. It is packaged in a small SOT-23 surface mount package, which is totally lead-free and fully RoHS compliant.

Key Specifications

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Source On Resistance (Max) RDS(ON) 7.5 Ω @ VGS = 5V
Maximum Drain Current ID 210 mA @ VGS = 10V, TA = +25°C
Gate-Source Voltage VGSS ±20 V
Maximum Power Dissipation PD 300 mW
Operating and Storage Temperature Range TJ -55 to 150 °C
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free

Applications

  • Motor Control
  • Power Management Functions
  • Amplifier Circuits
  • Switching, Linear, and Digital Logic Applications

Q & A

  1. What is the maximum drain-source voltage of the 2N7002-7-F MOSFET?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the maximum drain current of the 2N7002-7-F MOSFET at 25°C?

    The maximum drain current (ID) at 25°C is 210mA when VGS = 10V.

  3. What is the on-state resistance (RDS(ON)) of the 2N7002-7-F MOSFET?

    The on-state resistance (RDS(ON)) is 7.5Ω at VGS = 5V.

  4. What is the gate-source voltage range for the 2N7002-7-F MOSFET?

    The gate-source voltage (VGSS) range is ±20V.

  5. What is the maximum power dissipation of the 2N7002-7-F MOSFET?

    The maximum power dissipation (PD) is 300mW.

  6. What is the operating temperature range of the 2N7002-7-F MOSFET?

    The operating and storage temperature range is -55 to 150°C.

  7. What type of package does the 2N7002-7-F MOSFET come in?

    The 2N7002-7-F MOSFET comes in a SOT-23 (SC-59, TO-236) package.

  8. Is the 2N7002-7-F MOSFET RoHS compliant?

    Yes, the 2N7002-7-F MOSFET is totally lead-free and fully RoHS compliant.

  9. What are some common applications of the 2N7002-7-F MOSFET?

    Common applications include motor control, power management functions, amplifier circuits, and switching, linear, and digital logic applications.

  10. What is the typical gate threshold voltage of the 2N7002-7-F MOSFET?

    The typical gate threshold voltage (VGS(th)) is 2.5V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
513

Please send RFQ , we will respond immediately.

Same Series
2N7002-7
2N7002-7
MOSFET N-CH 60V 115MA SOT23-3

Similar Products

Part Number 2N7002-7 2N7002K-7 2N7002A-7 2N7002H-7 2N7002-G 2N7002T-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Microchip Technology Diodes Incorporated
Product Status Obsolete Active Active Active Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 380mA (Ta) 180mA (Ta) 170mA (Ta) 115mA (Tj) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V 5V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 2Ohm @ 500mA, 10V 6Ohm @ 115mA, 5V 7.5Ohm @ 50mA, 5V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 1mA 2V @ 250µA 3V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.3 nC @ 4.5 V - 0.35 nC @ 4.5 V - -
Vgs (Max) ±20V ±20V ±20V ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 23 pF @ 25 V 26 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 370mW (Ta) 370mW (Ta) 370mW (Ta) 370mW (Ta) 360mW (Ta) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23 (TO-236AB) SOT-523
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STP360N4F6
STP360N4F6
STMicroelectronics
MOSFET N-CH 40V 120A TO220
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

BAW56T-7-G
BAW56T-7-G
Diodes Incorporated
DIODE GEN PURPOSE
BAT54CT-7-F-79
BAT54CT-7-F-79
Diodes Incorporated
DIODE ARRAY SCHOTTKY 30V SOT523
1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
BAS16-7-F
BAS16-7-F
Diodes Incorporated
DIODE GEN PURP 75V 200MA SOT23-3
BAS16T-7-F
BAS16T-7-F
Diodes Incorporated
DIODE GP 85V 75MA SOT523
BZX84C3V0W-7-F
BZX84C3V0W-7-F
Diodes Incorporated
DIODE ZENER 3V 200MW SOT323
BZX84C39T-7-F
BZX84C39T-7-F
Diodes Incorporated
DIODE ZENER 39V 150MW SOT523
BZX84C15-7
BZX84C15-7
Diodes Incorporated
DIODE ZENER 15V 300MW SOT23-3
BZX84C30-7-F-31
BZX84C30-7-F-31
Diodes Incorporated
DIODE ZENER 30V 300MW SOT23
BSS84W-7-F
BSS84W-7-F
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT323
2N7002TA
2N7002TA
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
LM2903TH-13
LM2903TH-13
Diodes Incorporated
IC COMPARATOR DUAL DIFF 8TSSOP