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2N7002-7
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Diodes Incorporated 2N7002-7

Manufacturer No:
2N7002-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The 2N7002-7-F is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. It is packaged in a small SOT-23 surface mount package, which is totally lead-free and fully RoHS compliant.

Key Specifications

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Source On Resistance (Max) RDS(ON) 7.5 Ω @ VGS = 5V
Maximum Drain Current ID 210 mA @ VGS = 10V, TA = +25°C
Gate-Source Voltage VGSS ±20 V
Maximum Power Dissipation PD 300 mW
Operating and Storage Temperature Range TJ -55 to 150 °C
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free

Applications

  • Motor Control
  • Power Management Functions
  • Amplifier Circuits
  • Switching, Linear, and Digital Logic Applications

Q & A

  1. What is the maximum drain-source voltage of the 2N7002-7-F MOSFET?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the maximum drain current of the 2N7002-7-F MOSFET at 25°C?

    The maximum drain current (ID) at 25°C is 210mA when VGS = 10V.

  3. What is the on-state resistance (RDS(ON)) of the 2N7002-7-F MOSFET?

    The on-state resistance (RDS(ON)) is 7.5Ω at VGS = 5V.

  4. What is the gate-source voltage range for the 2N7002-7-F MOSFET?

    The gate-source voltage (VGSS) range is ±20V.

  5. What is the maximum power dissipation of the 2N7002-7-F MOSFET?

    The maximum power dissipation (PD) is 300mW.

  6. What is the operating temperature range of the 2N7002-7-F MOSFET?

    The operating and storage temperature range is -55 to 150°C.

  7. What type of package does the 2N7002-7-F MOSFET come in?

    The 2N7002-7-F MOSFET comes in a SOT-23 (SC-59, TO-236) package.

  8. Is the 2N7002-7-F MOSFET RoHS compliant?

    Yes, the 2N7002-7-F MOSFET is totally lead-free and fully RoHS compliant.

  9. What are some common applications of the 2N7002-7-F MOSFET?

    Common applications include motor control, power management functions, amplifier circuits, and switching, linear, and digital logic applications.

  10. What is the typical gate threshold voltage of the 2N7002-7-F MOSFET?

    The typical gate threshold voltage (VGS(th)) is 2.5V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
2N7002-7
2N7002-7
MOSFET N-CH 60V 115MA SOT23-3

Similar Products

Part Number 2N7002-7 2N7002K-7 2N7002A-7 2N7002H-7 2N7002-G 2N7002T-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Microchip Technology Diodes Incorporated
Product Status Obsolete Active Active Active Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 380mA (Ta) 180mA (Ta) 170mA (Ta) 115mA (Tj) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V 5V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 2Ohm @ 500mA, 10V 6Ohm @ 115mA, 5V 7.5Ohm @ 50mA, 5V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 1mA 2V @ 250µA 3V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.3 nC @ 4.5 V - 0.35 nC @ 4.5 V - -
Vgs (Max) ±20V ±20V ±20V ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 23 pF @ 25 V 26 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 370mW (Ta) 370mW (Ta) 370mW (Ta) 370mW (Ta) 360mW (Ta) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23 (TO-236AB) SOT-523
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523

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