2N7002-7
  • Share:

Diodes Incorporated 2N7002-7

Manufacturer No:
2N7002-7
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-7-F is an N-channel enhancement mode MOSFET produced by Diodes Incorporated. This device is designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications. It is packaged in a small SOT-23 surface mount package, which is totally lead-free and fully RoHS compliant.

Key Specifications

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Source On Resistance (Max) RDS(ON) 7.5 Ω @ VGS = 5V
Maximum Drain Current ID 210 mA @ VGS = 10V, TA = +25°C
Gate-Source Voltage VGSS ±20 V
Maximum Power Dissipation PD 300 mW
Operating and Storage Temperature Range TJ -55 to 150 °C
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount

Key Features

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free

Applications

  • Motor Control
  • Power Management Functions
  • Amplifier Circuits
  • Switching, Linear, and Digital Logic Applications

Q & A

  1. What is the maximum drain-source voltage of the 2N7002-7-F MOSFET?

    The maximum drain-source voltage (VDSS) is 60V.

  2. What is the maximum drain current of the 2N7002-7-F MOSFET at 25°C?

    The maximum drain current (ID) at 25°C is 210mA when VGS = 10V.

  3. What is the on-state resistance (RDS(ON)) of the 2N7002-7-F MOSFET?

    The on-state resistance (RDS(ON)) is 7.5Ω at VGS = 5V.

  4. What is the gate-source voltage range for the 2N7002-7-F MOSFET?

    The gate-source voltage (VGSS) range is ±20V.

  5. What is the maximum power dissipation of the 2N7002-7-F MOSFET?

    The maximum power dissipation (PD) is 300mW.

  6. What is the operating temperature range of the 2N7002-7-F MOSFET?

    The operating and storage temperature range is -55 to 150°C.

  7. What type of package does the 2N7002-7-F MOSFET come in?

    The 2N7002-7-F MOSFET comes in a SOT-23 (SC-59, TO-236) package.

  8. Is the 2N7002-7-F MOSFET RoHS compliant?

    Yes, the 2N7002-7-F MOSFET is totally lead-free and fully RoHS compliant.

  9. What are some common applications of the 2N7002-7-F MOSFET?

    Common applications include motor control, power management functions, amplifier circuits, and switching, linear, and digital logic applications.

  10. What is the typical gate threshold voltage of the 2N7002-7-F MOSFET?

    The typical gate threshold voltage (VGS(th)) is 2.5V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):370mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
513

Please send RFQ , we will respond immediately.

Same Series
2N7002-7
2N7002-7
MOSFET N-CH 60V 115MA SOT23-3

Similar Products

Part Number 2N7002-7 2N7002K-7 2N7002A-7 2N7002H-7 2N7002-G 2N7002T-7
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated Microchip Technology Diodes Incorporated
Product Status Obsolete Active Active Active Active Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta) 380mA (Ta) 180mA (Ta) 170mA (Ta) 115mA (Tj) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V 5V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 50mA, 5V 2Ohm @ 500mA, 10V 6Ohm @ 115mA, 5V 7.5Ohm @ 50mA, 5V 7.5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 1mA 2V @ 250µA 3V @ 250µA 2.5V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 0.3 nC @ 4.5 V - 0.35 nC @ 4.5 V - -
Vgs (Max) ±20V ±20V ±20V ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 50 pF @ 25 V 23 pF @ 25 V 26 pF @ 25 V 50 pF @ 25 V 50 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 370mW (Ta) 370mW (Ta) 370mW (Ta) 370mW (Ta) 360mW (Ta) 150mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3 SOT-23-3 SOT-23 (TO-236AB) SOT-523
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SOT-523

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB

Related Product By Brand

BAS70-04-7-F
BAS70-04-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT23-3
BAS40-06-7-F
BAS40-06-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT23-3
BAS21DWA-7
BAS21DWA-7
Diodes Incorporated
DIODE SW DL 2500V 100MA SOT353
1N4148WS-7-F
1N4148WS-7-F
Diodes Incorporated
DIODE GEN PURP 75V 150MA SOD323
BAT54TQ-7-F
BAT54TQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT523 T&R 3K
BAS21W-7
BAS21W-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT323
BZX84C9V1S-7
BZX84C9V1S-7
Diodes Incorporated
DIODE ZENER ARRAY 9.1V SOT363
BZX84C2V7-7-F
BZX84C2V7-7-F
Diodes Incorporated
DIODE ZENER 2.7V 300MW SOT23-3
BZT52HC39WF-7
BZT52HC39WF-7
Diodes Incorporated
ZENER DIODE SOD123F T&R 3K
BZX84C4V3W-7
BZX84C4V3W-7
Diodes Incorporated
DIODE ZENER 4.3V 200MW SOT323
BZX84C15W-7
BZX84C15W-7
Diodes Incorporated
DIODE ZENER 15V 200MW SOT323
BC847BFZ-7B
BC847BFZ-7B
Diodes Incorporated
TRANS NPN 45V 0.1A 3DFN