2N7002-G
  • Share:

Microchip Technology 2N7002-G

Manufacturer No:
2N7002-G
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-G is an N-Channel Enhancement Mode Field Effect Transistor (FET) produced by Microchip Technology. This device utilizes a vertical DMOS structure and is known for its high input impedance, low on-state resistance, and fast switching speeds. The 2N7002-G is designed to offer the power handling capabilities of bipolar transistors while maintaining the advantages of MOS devices, such as thermal stability and freedom from thermal runaway.

Key Specifications

Parameter Min Max Units Conditions
VDSS (Drain-to-Source Breakdown Voltage) - - 60 V VGS = 0V, ID = 10µA
VGS(th) (Gate Threshold Voltage) 1.0 - 2.5 V VGS = VDS, ID = 250µA
ID(ON) (On-state Drain Current) - - 500 mA VGS = 10V, VDS = 25V
RDS(ON) (Static Drain-to-Source On-state Resistance) - - 7.5 Ω VGS = 10V, ID = 500mA
CISS (Input Capacitance) - - 50 pF VGS = 0V, VDS = 25V, f = 1.0MHz
tON (Turn-on Time) - - 20 ns VDD = 30V, ID = 200mA, RGEN = 25Ω

Key Features

  • Low on-state resistance (RDS(ON)) of up to 7.5 Ω
  • Low gate threshold voltage (VGS(th)) between 1.0V and 2.5V
  • High input impedance and high gain
  • Fast switching speeds with turn-on and turn-off times of 20 ns each
  • Low input capacitance (CISS) of up to 50 pF
  • Integral source-drain diode
  • Free from secondary breakdown and thermal runaway
  • Totally lead-free and fully RoHS compliant
  • Small surface mount package (SOT-23)

Applications

  • Motor controls
  • Converters
  • Amplifiers
  • Switches
  • Power supply circuits
  • Drivers for relays, hammers, solenoids, lamps, memories, displays, and bipolar transistors
  • Small servo motor control
  • Power MOSFET gate drivers

Q & A

  1. What is the drain-to-source breakdown voltage of the 2N7002-G?

    The drain-to-source breakdown voltage (VDSS) is up to 60V.

  2. What is the typical gate threshold voltage of the 2N7002-G?

    The gate threshold voltage (VGS(th)) is between 1.0V and 2.5V.

  3. What is the maximum on-state drain current of the 2N7002-G?

    The maximum on-state drain current (ID(ON)) is up to 500 mA.

  4. What is the typical static drain-to-source on-state resistance of the 2N7002-G?

    The static drain-to-source on-state resistance (RDS(ON)) is up to 7.5 Ω.

  5. What is the input capacitance of the 2N7002-G?

    The input capacitance (CISS) is up to 50 pF.

  6. What are the typical turn-on and turn-off times of the 2N7002-G?

    The turn-on and turn-off times are both up to 20 ns.

  7. Is the 2N7002-G RoHS compliant?

    Yes, the 2N7002-G is totally lead-free and fully RoHS compliant.

  8. What package type is the 2N7002-G available in?

    The 2N7002-G is available in a SOT-23 package.

  9. What are some common applications of the 2N7002-G?

    Common applications include motor controls, converters, amplifiers, switches, power supply circuits, and drivers for various devices.

  10. Is the 2N7002-G free from thermal runaway?

    Yes, the 2N7002-G is free from thermal runaway and thermally-induced secondary breakdown.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.67
140

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002-G 2N7000-G 2N7002-7
Manufacturer Microchip Technology Microchip Technology Diodes Incorporated
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Tj) 200mA (Tj) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3V @ 1mA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 60 pF @ 25 V 50 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 1W (Tc) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount
Supplier Device Package SOT-23 (TO-236AB) TO-92-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-226-3, TO-92-3 (TO-226AA) TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK

Related Product By Brand

KSZ8851-16MLL-EVAL
KSZ8851-16MLL-EVAL
Microchip Technology
BOARD EVALUATION KSZ8851-16MLL
UPS5817/TR7
UPS5817/TR7
Microchip Technology
DIODE SCHOTTKY 20V 1A POWERMITE
BZV55C13
BZV55C13
Microchip Technology
VOLTAGE REGULATOR
ATMEGA64A-AUR
ATMEGA64A-AUR
Microchip Technology
IC MCU 8BIT 64KB FLASH 64TQFP
ATXMEGA128A1U-AU
ATXMEGA128A1U-AU
Microchip Technology
IC MCU 8/16B 128KB FLASH 100TQFP
PIC16F1503T-I/SL
PIC16F1503T-I/SL
Microchip Technology
IC MCU 8BIT 3.5KB FLASH 14SOIC
AT90CAN128-16MU
AT90CAN128-16MU
Microchip Technology
IC MCU 8BIT 128KB FLASH 64QFN
USB3320C-EZK-TR
USB3320C-EZK-TR
Microchip Technology
IC TRANSCEIVER HALF 1/1 32QFN
MCP2562T-E/SN
MCP2562T-E/SN
Microchip Technology
IC TRANSCEIVER HALF 1/1 8SOIC
SST25VF016B-50-4I-S2AF
SST25VF016B-50-4I-S2AF
Microchip Technology
IC FLASH 16MBIT SPI 50MHZ 8SOIC
24AA025E48-I/SN
24AA025E48-I/SN
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
AT88SC0104CA-SH
AT88SC0104CA-SH
Microchip Technology
IC EEPROM 1K I2C 4MHZ 8SOIC