2N7002-G
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Microchip Technology 2N7002-G

Manufacturer No:
2N7002-G
Manufacturer:
Microchip Technology
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 115MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002-G is an N-Channel Enhancement Mode Field Effect Transistor (FET) produced by Microchip Technology. This device utilizes a vertical DMOS structure and is known for its high input impedance, low on-state resistance, and fast switching speeds. The 2N7002-G is designed to offer the power handling capabilities of bipolar transistors while maintaining the advantages of MOS devices, such as thermal stability and freedom from thermal runaway.

Key Specifications

Parameter Min Max Units Conditions
VDSS (Drain-to-Source Breakdown Voltage) - - 60 V VGS = 0V, ID = 10µA
VGS(th) (Gate Threshold Voltage) 1.0 - 2.5 V VGS = VDS, ID = 250µA
ID(ON) (On-state Drain Current) - - 500 mA VGS = 10V, VDS = 25V
RDS(ON) (Static Drain-to-Source On-state Resistance) - - 7.5 Ω VGS = 10V, ID = 500mA
CISS (Input Capacitance) - - 50 pF VGS = 0V, VDS = 25V, f = 1.0MHz
tON (Turn-on Time) - - 20 ns VDD = 30V, ID = 200mA, RGEN = 25Ω

Key Features

  • Low on-state resistance (RDS(ON)) of up to 7.5 Ω
  • Low gate threshold voltage (VGS(th)) between 1.0V and 2.5V
  • High input impedance and high gain
  • Fast switching speeds with turn-on and turn-off times of 20 ns each
  • Low input capacitance (CISS) of up to 50 pF
  • Integral source-drain diode
  • Free from secondary breakdown and thermal runaway
  • Totally lead-free and fully RoHS compliant
  • Small surface mount package (SOT-23)

Applications

  • Motor controls
  • Converters
  • Amplifiers
  • Switches
  • Power supply circuits
  • Drivers for relays, hammers, solenoids, lamps, memories, displays, and bipolar transistors
  • Small servo motor control
  • Power MOSFET gate drivers

Q & A

  1. What is the drain-to-source breakdown voltage of the 2N7002-G?

    The drain-to-source breakdown voltage (VDSS) is up to 60V.

  2. What is the typical gate threshold voltage of the 2N7002-G?

    The gate threshold voltage (VGS(th)) is between 1.0V and 2.5V.

  3. What is the maximum on-state drain current of the 2N7002-G?

    The maximum on-state drain current (ID(ON)) is up to 500 mA.

  4. What is the typical static drain-to-source on-state resistance of the 2N7002-G?

    The static drain-to-source on-state resistance (RDS(ON)) is up to 7.5 Ω.

  5. What is the input capacitance of the 2N7002-G?

    The input capacitance (CISS) is up to 50 pF.

  6. What are the typical turn-on and turn-off times of the 2N7002-G?

    The turn-on and turn-off times are both up to 20 ns.

  7. Is the 2N7002-G RoHS compliant?

    Yes, the 2N7002-G is totally lead-free and fully RoHS compliant.

  8. What package type is the 2N7002-G available in?

    The 2N7002-G is available in a SOT-23 package.

  9. What are some common applications of the 2N7002-G?

    Common applications include motor controls, converters, amplifiers, switches, power supply circuits, and drivers for various devices.

  10. Is the 2N7002-G free from thermal runaway?

    Yes, the 2N7002-G is free from thermal runaway and thermally-induced secondary breakdown.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:115mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23 (TO-236AB)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number 2N7002-G 2N7000-G 2N7002-7
Manufacturer Microchip Technology Microchip Technology Diodes Incorporated
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 115mA (Tj) 200mA (Tj) 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 5Ohm @ 500mA, 10V 7.5Ohm @ 50mA, 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3V @ 1mA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - - -
Vgs (Max) ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 25 V 60 pF @ 25 V 50 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 360mW (Ta) 1W (Tc) 370mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole Surface Mount
Supplier Device Package SOT-23 (TO-236AB) TO-92-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-226-3, TO-92-3 (TO-226AA) TO-236-3, SC-59, SOT-23-3

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