Overview
The 2N7002T-7, produced by Diodes Incorporated, is an N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. This device is part of the 2N7002 series and is known for its low on-state resistance, low gate threshold voltage, and fast switching speed. It is packaged in a small SOT-23-3 surface mount package, making it ideal for compact and efficient designs. The MOSFET is fully RoHS compliant, lead-free, and halogen and antimony free, ensuring environmental sustainability and compliance with regulatory standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V |
| Drain-Gate Voltage | VDGR | 60 | V |
| Gate-Source Voltage (Continuous/Pulsed) | VGSS | ±20 / ±40 | V |
| Drain Current (Continuous) | ID | 115 | mA |
| Drain-Source On Resistance (Max) | RDS(ON) | 7.5 | Ω @ VGS = 5V |
| Total Power Dissipation | PD | 150 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 833 | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
| Input Capacitance | Ciss | 22 - 50 | pF @ VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 11 - 25 | pF @ VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 2.0 - 5.0 | pF @ VDS = 25V, VGS = 0V, f = 1.0MHz |
Key Features
- Low On-Resistance: Minimized on-state resistance for efficient power management.
- Low Gate Threshold Voltage: Ensures easy switching and low power consumption.
- Low Input Capacitance: Reduces the capacitance load on the gate, enhancing switching speed.
- Fast Switching Speed: Ideal for applications requiring quick and efficient switching.
- Ultra-Small Surface Mount Package: SOT-23-3 package for compact designs.
- Totally Lead-Free & Fully RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- Halogen and Antimony Free: Further enhancing environmental sustainability.
Applications
- DC-DC Converters: Suitable for high efficiency power conversion.
- Power Management Functions: Ideal for managing power in various electronic systems.
- Motor Control: Used in motor control circuits for efficient operation.
- Battery Operated Systems: Suitable for battery-powered devices requiring efficient power management.
- Solid-State Relays: Used in solid-state relay applications.
- Drivers for Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors: Versatile in driving various types of loads.
Q & A
- What is the maximum drain-source voltage (VDSS) of the 2N7002T-7 MOSFET?
The maximum drain-source voltage (VDSS) is 60V. - What is the typical on-state resistance (RDS(ON)) of the 2N7002T-7?
The typical on-state resistance (RDS(ON)) is 7.5Ω at VGS = 5V. - What is the maximum continuous drain current (ID) of the 2N7002T-7?
The maximum continuous drain current (ID) is 115mA. - What is the operating and storage temperature range of the 2N7002T-7?
The operating and storage temperature range is -55 to +150°C. - Is the 2N7002T-7 RoHS compliant?
Yes, the 2N7002T-7 is fully RoHS compliant and lead-free. - What package type is the 2N7002T-7 available in?
The 2N7002T-7 is available in a SOT-23-3 surface mount package. - What are some typical applications of the 2N7002T-7?
Typical applications include DC-DC converters, power management functions, motor control, battery operated systems, and solid-state relays. - What are the key features of the 2N7002T-7?
The key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and an ultra-small surface mount package. - How does the 2N7002T-7 handle thermal dissipation?
The thermal resistance, junction to ambient (RθJA), is 833°C/W. - What is the input capacitance of the 2N7002T-7?
The input capacitance (Ciss) is 22 - 50 pF at VDS = 25V, VGS = 0V, f = 1.0MHz.
