BC846BWQ-7-F
  • Share:

Diodes Incorporated BC846BWQ-7-F

Manufacturer No:
BC846BWQ-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
GENERAL PURPOSE TRANSISTOR SOT32
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BWQ-7-F is a small-signal NPN transistor manufactured by Diodes Incorporated. It is part of the BC846BWQ–BC847CWQ series, which is designed for various electronic applications. This transistor is ideally suited for automatic insertion and is fully RoHS compliant, making it environmentally friendly. It is also AEC-Q101 qualified, which ensures its suitability for automotive applications requiring specific change control and is manufactured in IATF 16949 certified facilities.

Key Specifications

Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 65 V
Emitter-Base Voltage VEBO 6 V
Continuous Collector Current IC 100 mA
Peak Collector Current ICM 200 mA
Peak Base Current IBM 200 mA
Power Dissipation PD 200 mW
Thermal Resistance, Junction to Ambient RθJA 625 °C/W
Thermal Resistance, Junction to Case RθJC 115 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
ESD Ratings - Human Body Model ESD HBM 4,000 V
Package SOT323
Package Material Molded Plastic, “Green” Molding Compound
Terminals Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208

Key Features

  • Ideally suited for automatic insertion.
  • Complementary PNP type: BC857BWQ.
  • Suitable for switching and AF amplifier applications.
  • Totally lead-free and fully RoHS compliant.
  • Halogen and antimony free, “Green” device.
  • AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
  • Low power dissipation of 200 mW.
  • High thermal resistance, junction to ambient (RθJA) of 625 °C/W.
  • Wide operating and storage temperature range of -65 to +150 °C.
  • High ESD ratings, including Human Body Model (HBM) of 4,000 V.

Applications

  • Switching applications due to its high collector-emitter breakdown voltage and low power dissipation.
  • Audio Frequency (AF) amplifier applications, leveraging its high current gain and low noise figure.
  • Automotive applications, given its AEC-Q101 qualification and compliance with automotive standards.
  • General-purpose small-signal amplification and switching in various electronic circuits.

Q & A

  1. What is the collector-base voltage of the BC846BWQ-7-F transistor?

    The collector-base voltage (VCBO) of the BC846BWQ-7-F transistor is 80 V.

  2. What is the continuous collector current rating of this transistor?

    The continuous collector current (IC) rating is 100 mA.

  3. Is the BC846BWQ-7-F transistor RoHS compliant?

    Yes, the BC846BWQ-7-F transistor is fully RoHS compliant and lead-free.

  4. What is the thermal resistance, junction to ambient, of this transistor?

    The thermal resistance, junction to ambient (RθJA), is 625 °C/W.

  5. What are the operating and storage temperature ranges for this transistor?

    The operating and storage temperature range is -65 to +150 °C.

  6. Is the BC846BWQ-7-F suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and suitable for automotive applications.

  7. What is the package type of the BC846BWQ-7-F transistor?

    The package type is SOT323.

  8. What is the ESD rating of the BC846BWQ-7-F transistor according to the Human Body Model?

    The ESD rating according to the Human Body Model (HBM) is 4,000 V.

  9. Can the BC846BWQ-7-F be used in AF amplifier applications?

    Yes, it is suitable for AF amplifier applications due to its high current gain and low noise figure.

  10. Is the BC846BWQ-7-F transistor halogen and antimony free?

    Yes, it is halogen and antimony free, classified as a “Green” device.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:200 mW
Frequency - Transition:300MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.04
5,108

Please send RFQ , we will respond immediately.

Same Series
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z00
DD15S20Z00
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JV5S
DD15S20JV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E0/AA
DD26S200E0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

MMBT100
MMBT100
onsemi
TRANS NPN 45V 0.5A SOT23-3
BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
SMMBTA92LT1G
SMMBTA92LT1G
onsemi
TRANS PNP 300V 0.5A SOT23-3
BF820,215
BF820,215
Nexperia USA Inc.
TRANS NPN 300V 0.05A TO236AB
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BCP69TA
BCP69TA
Diodes Incorporated
TRANS PNP BIPOL 20V 1A SOT-223
BCX56-10R1
BCX56-10R1
onsemi
TRANS NPN 80V 1A SOT89-3
STF826
STF826
STMicroelectronics
TRANS PNP 30V 3A SOT89-3
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

BAV99WQ-7-F
BAV99WQ-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT323
BAT54W-7-F
BAT54W-7-F
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOT323
MUR160
MUR160
Diodes Incorporated
FRED GPP RECTIFIER DO-41 T&R 5K
1N4007-B
1N4007-B
Diodes Incorporated
DIODE GEN PURP 1KV 1A DO41
BZX84C16TS-7-F
BZX84C16TS-7-F
Diodes Incorporated
DIODE ZENER ARRAY 16V SOT363
BZX84C6V2W-7
BZX84C6V2W-7
Diodes Incorporated
DIODE ZENER 6.2V 200MW SOT323
BZX84C3V9W-7-F
BZX84C3V9W-7-F
Diodes Incorporated
DIODE ZENER 3.9V 200MW SOT323
BZX84C8V2W-7-F
BZX84C8V2W-7-F
Diodes Incorporated
DIODE ZENER 8.2V 200MW SOT323
MMBT2222AQ-7-F
MMBT2222AQ-7-F
Diodes Incorporated
SS MID-PERF TRANSISTOR SOT23 T&R
BSS138DWK-7
BSS138DWK-7
Diodes Incorporated
MOSFET BVDSS: 41V~60V SOT363 T&R
2N7002E-7-F
2N7002E-7-F
Diodes Incorporated
MOSFET N-CH 60V 250MA SOT23-3
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23