BCP5416QTA
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Diodes Incorporated BCP5416QTA

Manufacturer No:
BCP5416QTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT223 T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5416QTA is a medium power NPN bipolar junction transistor (BJT) manufactured by Diodes Incorporated. It is designed to meet the stringent requirements of automotive applications and is qualified to AEC-Q101 standards for high reliability. This transistor is part of the BCP54/55/56 series and is known for its high continuous collector current and low saturation voltage.

Key Specifications

Characteristic Symbol Value Unit Test Condition
Collector-Base Voltage VCBO 45 V IC = 100µA
Collector-Emitter Voltage VCEO 45 V IC = 10mA
Emitter-Base Voltage VEBO 5 V IE = 100µA
Continuous Collector Current IC 1 A
Peak Pulse Collector Current ICM 2 A
Continuous Base Current IB 100 mA
Peak Pulse Base Current IBM 200 mA
Power Dissipation PD 2 W
Thermal Resistance, Junction to Ambient RθJA 62 °C/W
Thermal Resistance, Junction to Leads RθJL 19.4 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Collector-Emitter Saturation Voltage VCE(sat) < 500mV V IC = 0.5A, IB = 50mA

Key Features

  • High continuous collector current (IC = 1A) and peak pulse collector current (ICM = 2A)
  • Low saturation voltage (VCE(sat) < 500mV @ 0.5A)
  • Gain groups 10 and 16
  • Complementary PNP type: BCP5316Q
  • Totally lead-free and fully RoHS compliant
  • Halogen- and antimony-free, “Green” device
  • AEC-Q101 qualified for high reliability in automotive applications
  • Manufactured in IATF16949 certified facilities
  • Epitaxial planar die construction
  • UL flammability rating 94V-0 and moisture sensitivity level 1 per J-STD-020
  • Terminals with matte tin finish, solderable per MIL-STD-202, Method 208

Applications

  • Medium power switching or amplification applications
  • AF driver and output stages
  • Automotive applications requiring specific change control and high reliability

Q & A

  1. What is the continuous collector current of the BCP5416QTA?

    The continuous collector current (IC) is 1A.

  2. What is the peak pulse collector current of the BCP5416QTA?

    The peak pulse collector current (ICM) is 2A.

  3. What is the collector-emitter saturation voltage of the BCP5416QTA?

    The collector-emitter saturation voltage (VCE(sat)) is less than 500mV at 0.5A.

  4. Is the BCP5416QTA RoHS compliant?

    Yes, the BCP5416QTA is totally lead-free and fully RoHS compliant.

  5. What are the operating and storage temperature ranges for the BCP5416QTA?

    The operating and storage temperature range is -55°C to +150°C.

  6. What is the thermal resistance, junction to ambient, of the BCP5416QTA?

    The thermal resistance, junction to ambient (RθJA), is 62°C/W.

  7. Is the BCP5416QTA suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and manufactured in IATF16949 certified facilities, making it suitable for automotive applications.

  8. What is the power dissipation of the BCP5416QTA?

    The power dissipation (PD) is 2W.

  9. What is the complementary PNP type for the BCP5416QTA?

    The complementary PNP type is BCP5316Q.

  10. What are the typical applications of the BCP5416QTA?

    Typical applications include medium power switching or amplification, AF driver and output stages, and automotive applications.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
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Similar Products

Part Number BCP5416QTA BCP5416TA BCP5616QTA BCP5316QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Transistor Type NPN NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 80 V 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

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