BCP5316QTA
  • Share:

Diodes Incorporated BCP5316QTA

Manufacturer No:
BCP5316QTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT223 T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5316QTA is a PNP silicon planar medium power bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is housed in a SOT-223-3 surface mount package, making it suitable for a variety of applications requiring high reliability and performance. It is designed to operate at a collector-emitter voltage of up to 80V, with a collector current of 1A and a power dissipation of 2W. The transistor features a high frequency response, with a transition frequency of 150MHz, making it versatile for use in both analog and digital circuits.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (Vce)80V
Collector Current (Ic)1A
Power Dissipation (Pd)2W
Transition Frequency (ft)150MHz
Package TypeSOT-223-3
Mounting TypeSurface Mount
Current Gain (hfe)25 to 250

Key Features

  • High collector-emitter voltage of 80V and collector current of 1A, making it suitable for medium power applications.
  • High power dissipation of 2W, ensuring reliable operation in demanding environments.
  • High transition frequency of 150MHz, suitable for high-frequency applications.
  • SOT-223-3 surface mount package for compact and efficient design.
  • Wide current gain range (25 to 250), providing flexibility in circuit design.

Applications

The BCP5316QTA transistor is versatile and can be used in a variety of applications, including:

  • Amplifier circuits: Due to its high gain and frequency response, it is suitable for amplifier stages in audio and RF circuits.
  • Switching circuits: Its high collector current and power dissipation make it suitable for switching applications.
  • Power supplies: It can be used in power supply circuits where medium power handling is required.
  • Automotive and industrial control systems: Its robustness and reliability make it a good choice for these applications.

Q & A

  1. What is the collector-emitter voltage of the BCP5316QTA transistor?
    The collector-emitter voltage (Vce) of the BCP5316QTA transistor is 80V.
  2. What is the maximum collector current of the BCP5316QTA transistor?
    The maximum collector current (Ic) of the BCP5316QTA transistor is 1A.
  3. What is the power dissipation of the BCP5316QTA transistor?
    The power dissipation (Pd) of the BCP5316QTA transistor is 2W.
  4. What is the transition frequency of the BCP5316QTA transistor?
    The transition frequency (ft) of the BCP5316QTA transistor is 150MHz.
  5. What type of package does the BCP5316QTA transistor use?
    The BCP5316QTA transistor is housed in a SOT-223-3 surface mount package.
  6. What is the current gain range of the BCP5316QTA transistor?
    The current gain (hfe) range of the BCP5316QTA transistor is 25 to 250.
  7. Is the BCP5316QTA transistor suitable for high-frequency applications?
    Yes, the BCP5316QTA transistor is suitable for high-frequency applications due to its high transition frequency.
  8. Can the BCP5316QTA transistor be used in power supply circuits?
    Yes, the BCP5316QTA transistor can be used in power supply circuits where medium power handling is required.
  9. Is the BCP5316QTA transistor RoHS compliant?
    Yes, the BCP5316QTA transistor is RoHS compliant.
  10. What are some common applications of the BCP5316QTA transistor?
    The BCP5316QTA transistor is commonly used in amplifier circuits, switching circuits, power supplies, and automotive and industrial control systems.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
0 Remaining View Similar

In Stock

$0.13
6,228

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
CBC46W4S100T2X
CBC46W4S100T2X
CONN D-SUB RCPT 46POS CRIMP
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BCP5316QTA BCP5316TA BCP5616QTA BCP5416QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Transistor Type PNP PNP NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

Related Product By Categories

PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
PBSS4160U,115
PBSS4160U,115
Nexperia USA Inc.
TRANS NPN 60V 0.75A SOT323
2N5191G
2N5191G
onsemi
TRANS NPN 60V 4A TO126
PBSS5160T,215
PBSS5160T,215
Nexperia USA Inc.
TRANS PNP 60V 1A TO236AB
MMBT5550LT1G
MMBT5550LT1G
onsemi
TRANS NPN 140V 0.6A SOT23-3
TIP122TU
TIP122TU
Fairchild Semiconductor
TRANS NPN DARL 100V 5A TO220-3
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BU806 PBFREE
BU806 PBFREE
Central Semiconductor Corp
TRANS NPN 400V 8A TO220-3
MMBT2222AT
MMBT2222AT
Fairchild Semiconductor
TRANS NPN 40V 0.6A SOT523F
TIP122-BP
TIP122-BP
Micro Commercial Co
TRANS NPN DARL 100V 5A TO220AB
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3
BC846B/SNVL
BC846B/SNVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB

Related Product By Brand

BAW56-7
BAW56-7
Diodes Incorporated
DIODE ARRAY GP 75V 300MA SOT23-3
BAV70DW-7
BAV70DW-7
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
MBR20H100CT-G1
MBR20H100CT-G1
Diodes Incorporated
DIODE ARRAY SCHOTTKY 100V TO220
BZX84C15S-7-F
BZX84C15S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 15V SOT363
BZX84C4V3Q-13-F
BZX84C4V3Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C15-7
BZX84C15-7
Diodes Incorporated
DIODE ZENER 15V 300MW SOT23-3
BZX84C4V3-7-G
BZX84C4V3-7-G
Diodes Incorporated
DIODE ZENER
BC856A-7-F
BC856A-7-F
Diodes Incorporated
TRANS PNP 65V 0.1A SOT23-3
BCP5516TA
BCP5516TA
Diodes Incorporated
TRANS NPN 60V 1A SOT223-3
BCP53QTA
BCP53QTA
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT223 T
BC847BVC-7-F
BC847BVC-7-F
Diodes Incorporated
IC TRANSISTOR ARRAY SOT563
74LVC2G34FW5-7
74LVC2G34FW5-7
Diodes Incorporated
LOGIC LVC 2 GATE X1-DFN1010-6 T&