BCP5316QTA
  • Share:

Diodes Incorporated BCP5316QTA

Manufacturer No:
BCP5316QTA
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
PWR MID PERF TRANSISTOR SOT223 T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP5316QTA is a PNP silicon planar medium power bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is housed in a SOT-223-3 surface mount package, making it suitable for a variety of applications requiring high reliability and performance. It is designed to operate at a collector-emitter voltage of up to 80V, with a collector current of 1A and a power dissipation of 2W. The transistor features a high frequency response, with a transition frequency of 150MHz, making it versatile for use in both analog and digital circuits.

Key Specifications

ParameterValue
Transistor TypePNP Bipolar Junction Transistor (BJT)
Collector-Emitter Voltage (Vce)80V
Collector Current (Ic)1A
Power Dissipation (Pd)2W
Transition Frequency (ft)150MHz
Package TypeSOT-223-3
Mounting TypeSurface Mount
Current Gain (hfe)25 to 250

Key Features

  • High collector-emitter voltage of 80V and collector current of 1A, making it suitable for medium power applications.
  • High power dissipation of 2W, ensuring reliable operation in demanding environments.
  • High transition frequency of 150MHz, suitable for high-frequency applications.
  • SOT-223-3 surface mount package for compact and efficient design.
  • Wide current gain range (25 to 250), providing flexibility in circuit design.

Applications

The BCP5316QTA transistor is versatile and can be used in a variety of applications, including:

  • Amplifier circuits: Due to its high gain and frequency response, it is suitable for amplifier stages in audio and RF circuits.
  • Switching circuits: Its high collector current and power dissipation make it suitable for switching applications.
  • Power supplies: It can be used in power supply circuits where medium power handling is required.
  • Automotive and industrial control systems: Its robustness and reliability make it a good choice for these applications.

Q & A

  1. What is the collector-emitter voltage of the BCP5316QTA transistor?
    The collector-emitter voltage (Vce) of the BCP5316QTA transistor is 80V.
  2. What is the maximum collector current of the BCP5316QTA transistor?
    The maximum collector current (Ic) of the BCP5316QTA transistor is 1A.
  3. What is the power dissipation of the BCP5316QTA transistor?
    The power dissipation (Pd) of the BCP5316QTA transistor is 2W.
  4. What is the transition frequency of the BCP5316QTA transistor?
    The transition frequency (ft) of the BCP5316QTA transistor is 150MHz.
  5. What type of package does the BCP5316QTA transistor use?
    The BCP5316QTA transistor is housed in a SOT-223-3 surface mount package.
  6. What is the current gain range of the BCP5316QTA transistor?
    The current gain (hfe) range of the BCP5316QTA transistor is 25 to 250.
  7. Is the BCP5316QTA transistor suitable for high-frequency applications?
    Yes, the BCP5316QTA transistor is suitable for high-frequency applications due to its high transition frequency.
  8. Can the BCP5316QTA transistor be used in power supply circuits?
    Yes, the BCP5316QTA transistor can be used in power supply circuits where medium power handling is required.
  9. Is the BCP5316QTA transistor RoHS compliant?
    Yes, the BCP5316QTA transistor is RoHS compliant.
  10. What are some common applications of the BCP5316QTA transistor?
    The BCP5316QTA transistor is commonly used in amplifier circuits, switching circuits, power supplies, and automotive and industrial control systems.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 2V
Power - Max:2 W
Frequency - Transition:150MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223-3
0 Remaining View Similar

In Stock

$0.13
6,228

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S20W0S
DD15S20W0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50
DD26S2S50V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BCP5316QTA BCP5316TA BCP5616QTA BCP5416QTA
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Transistor Type PNP PNP NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 45 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V 100 @ 150mA, 2V
Power - Max 2 W 2 W 2 W 2 W
Frequency - Transition 150MHz 150MHz 150MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223-3 SOT-223-3 SOT-223-3 SOT-223-3

Related Product By Categories

2N6491
2N6491
Harris Corporation
TRANS PNP 80V 15A TO220AB
2SC5658M3T5G
2SC5658M3T5G
onsemi
TRANS NPN 50V 0.1A SOT723
PBHV9040T,215
PBHV9040T,215
Nexperia USA Inc.
TRANS PNP 400V 0.25A TO236AB
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
NSV1C201MZ4T1G
NSV1C201MZ4T1G
onsemi
TRANS NPN 100V 2A SOT223
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
BUF420AW
BUF420AW
STMicroelectronics
TRANS NPN 450V 30A TO247-3
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
PN2222AG
PN2222AG
onsemi
TRANS NPN 40V 0.6A TO92
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC847CW/ZLF
BC847CW/ZLF
Nexperia USA Inc.
TRANS SOT323
PMBT4403/MIGVL
PMBT4403/MIGVL
NXP USA Inc.
TRANS PNP SWITCHING TO-236AB

Related Product By Brand

BAV99BRW-7-F
BAV99BRW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
BAS40-04T-7-F-36
BAS40-04T-7-F-36
Diodes Incorporated
DIODE ARRAY SCHOTTKY 40V SOT523
MUR160-T
MUR160-T
Diodes Incorporated
DIODE GEN PURP 600V 1A DO41
1N4148-T
1N4148-T
Diodes Incorporated
DIODE GEN PURP 75V 150MA DO35
BAS21T-7
BAS21T-7
Diodes Incorporated
DIODE GEN PURP 200V 200MA SOT523
1N4007-B
1N4007-B
Diodes Incorporated
DIODE GEN PURP 1KV 1A DO41
BZX84C3V6S-7-F
BZX84C3V6S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 3.6V SOT363
BZX84C22Q-13-F
BZX84C22Q-13-F
Diodes Incorporated
ZENER DIODE SOT23 T&R 10K
BZX84C3V9T-7-F
BZX84C3V9T-7-F
Diodes Incorporated
DIODE ZENER 3.9V 150MW SOT523
BZX84C6V8-7-F-31
BZX84C6V8-7-F-31
Diodes Incorporated
DIODE ZENER 6.8V 300MW SOT23
2N7002TA
2N7002TA
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
74LVC1G125W5-7
74LVC1G125W5-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V SOT25