PMGD290XN,115
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Nexperia USA Inc. PMGD290XN,115

Manufacturer No:
PMGD290XN,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 20V 0.86A 6TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMGD290XN,115 is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component utilizes TrenchMOS technology and is packaged in a small footprint SOT363 (TSSOP6) package. It is designed for use in various applications including computing, communications, consumer, and industrial sectors. The PMGD290XN,115 is known for its low conduction losses, fast switching characteristics, and suitability for high frequency applications and low gate drive sources.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 20 V
Continuous Drain Current (Id) @ 25°C 860 mA
On-State Resistance (Rds(on)) @ Id, Vgs 340 mΩ @ 200mA, 4.5V
Gate Threshold Voltage (Vgs(th)) @ Id 1 V @ 250µA V
Gate Charge (Qg) @ Vgs 0.89 nC @ 4.5V nC
Input Capacitance (Ciss) @ Vds 45 pF @ 20V pF
Maximum Power Dissipation 400 mW mW
Operating Temperature Range -55°C to 150°C (TJ) °C
Package Type SOT363 (TSSOP6)
Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Key Features

  • Low conduction losses due to low on-state resistance, enhancing efficiency in various applications.
  • Compact SOT363 (TSSOP6) package, saving PCB space by being 40% smaller than SOT23 packages.
  • Fast switching characteristics, making it suitable for high frequency applications.
  • Suitable for low gate drive sources, allowing for flexible design options.
  • Logic level gate feature, facilitating easy integration with logic circuits.

Applications

  • Computing and communications equipment.
  • Consumer electronics.
  • Industrial control and automation systems.
  • Portable appliances requiring efficient switching and low power consumption.
  • Driver circuits and power management systems.

Q & A

  1. What is the PMGD290XN,115?

    The PMGD290XN,115 is a dual N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc., utilizing TrenchMOS technology.

  2. What package type does the PMGD290XN,115 use?

    The PMGD290XN,115 is packaged in a SOT363 (TSSOP6) package.

  3. What are the key benefits of the PMGD290XN,115?

    The key benefits include low conduction losses, fast switching characteristics, and a compact footprint.

  4. What is the maximum drain to source voltage (Vdss) of the PMGD290XN,115?

    The maximum drain to source voltage (Vdss) is 20 V.

  5. What is the continuous drain current (Id) at 25°C for the PMGD290XN,115?

    The continuous drain current (Id) at 25°C is 860 mA.

  6. What is the on-state resistance (Rds(on)) of the PMGD290XN,115?

    The on-state resistance (Rds(on)) is 340 mΩ at 200mA and 4.5V Vgs.

  7. What are the typical applications of the PMGD290XN,115?

    Typical applications include computing, communications, consumer electronics, and industrial control systems.

  8. Is the PMGD290XN,115 suitable for high frequency applications?

    Yes, it is suitable for high frequency applications due to its fast switching characteristics.

  9. What is the operating temperature range of the PMGD290XN,115?

    The operating temperature range is -55°C to 150°C (TJ).

  10. Is the PMGD290XN,115 RoHS compliant?

    Yes, the PMGD290XN,115 is RoHS compliant and lead-free.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:860mA
Rds On (Max) @ Id, Vgs:350mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.72nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:34pF @ 20V
Power - Max:410mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:6-TSSOP
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