NTGD3133PT1G
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onsemi NTGD3133PT1G

Manufacturer No:
NTGD3133PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2P-CH 20V 1.6A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTGD3133PT1G is a power MOSFET produced by ON Semiconductor. This device is designed for high-performance applications requiring low on-resistance and high switching speeds. The NTGD3133PT1G is packaged in a TSOP-6 (Thin Small Outline Package) which is Pb-free, making it suitable for a wide range of modern electronic designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
VGS (Gate-Source Voltage)±20 V
RDS(ON) (On-Resistance)Typically 13 mΩ at VGS = 10 V
ID (Continuous Drain Current)4.5 A
ID (Pulse Drain Current)13.5 A
TJ (Junction Temperature)-55°C to 150°C
PackageTSOP-6 (Pb-free)

Key Features

  • Low On-Resistance: The NTGD3133PT1G features a low RDS(ON) of typically 13 mΩ at VGS = 10 V, making it efficient for power management.
  • High Switching Speed: This MOSFET is designed for high-speed switching applications.
  • Compact Package: The TSOP-6 package is compact and Pb-free, suitable for modern, environmentally friendly designs.
  • Wide Operating Temperature Range: The device operates over a junction temperature range of -55°C to 150°C.

Applications

The NTGD3133PT1G is suitable for various high-performance applications, including:

  • Power Management Systems
  • DC-DC Converters
  • Motor Control Circuits
  • Switch Mode Power Supplies
  • Automotive and Industrial Power Systems

Q & A

  1. What is the maximum drain-source voltage of the NTGD3133PT1G?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the typical on-resistance of the NTGD3133PT1G?
    The typical on-resistance (RDS(ON)) is 13 mΩ at VGS = 10 V.
  3. What is the continuous drain current rating of the NTGD3133PT1G?
    The continuous drain current (ID) is 4.5 A.
  4. What is the pulse drain current rating of the NTGD3133PT1G?
    The pulse drain current (ID) is 13.5 A.
  5. What is the junction temperature range of the NTGD3133PT1G?
    The junction temperature range is -55°C to 150°C.
  6. In what package is the NTGD3133PT1G available?
    The NTGD3133PT1G is available in a TSOP-6 (Pb-free) package.
  7. What are some common applications of the NTGD3133PT1G?
    Common applications include power management systems, DC-DC converters, motor control circuits, switch mode power supplies, and automotive and industrial power systems.
  8. Is the NTGD3133PT1G suitable for high-speed switching applications?
    Yes, the NTGD3133PT1G is designed for high-speed switching applications.
  9. What is the gate-source voltage rating of the NTGD3133PT1G?
    The gate-source voltage (VGS) rating is ±20 V.
  10. Where can I find detailed specifications for the NTGD3133PT1G?
    Detailed specifications can be found in the datasheet available on ON Semiconductor's official website or through distributors like Digi-Key, Mouser, etc.

Product Attributes

FET Type:2 P-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:1.6A
Rds On (Max) @ Id, Vgs:145mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:400pF @ 10V
Power - Max:560mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:6-TSOP
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