BC807-40W-F2-0000HF
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd BC807-40W-F2-0000HF

Manufacturer No:
BC807-40W-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40W-F2-0000HF is a PNP bipolar junction transistor (BJT) manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is part of the BC807 series, known for its general-purpose and low VCE(sat) characteristics. It is housed in a small SOT323 (SC-70) surface-mounted device (SMD) plastic package, making it suitable for a wide range of applications where space is limited.

This transistor is AEC-Q101 qualified and PPAP capable, which makes it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Collector-Base Voltage VCBO -50 V
Emitter-Base Voltage VEB0 -5.0 V
Collector Current - Continuous IC -500 mA
Maximum Operating Junction Temperature TJ 150 °C
Transition Frequency fT 100 MHz
Forward Current Transfer Ratio (hFE) hFE 250 - 600 -
Collector-Emitter Saturation Voltage VCE(sat) -0.7 V
Base-Emitter On Voltage VBE(on) -1.2 V

Key Features

  • Suitable for AF-driver stages and low power output stages.
  • Epitaxial planar die construction for high stability and reliability.
  • Complementary NPN type available (BC817).
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Small SOT323 (SC-70) surface-mounted device (SMD) plastic package, ideal for space-constrained designs.
  • High current gain with a minimum hFE of 250 and a maximum of 600.
  • Low collector-emitter saturation voltage (VCE(sat)) of -0.7 V.

Applications

  • General power amplifier and switching applications.
  • Automotive electronics, including systems requiring AEC-Q101 qualification.
  • Industrial control and automation.
  • Consumer electronics, such as audio equipment and low power output stages.
  • Mobile and wearable devices where space and power efficiency are critical.

Q & A

  1. What is the maximum collector-emitter voltage of the BC807-40W-F2-0000HF transistor?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  2. What is the continuous collector current rating of this transistor?

    The continuous collector current (IC) is -500 mA.

  3. What is the maximum operating junction temperature for this transistor?

    The maximum operating junction temperature (TJ) is 150°C.

  4. Is the BC807-40W-F2-0000HF transistor RoHS compliant?
  5. What is the typical current gain (hFE) of this transistor?

    The typical current gain (hFE) ranges from 250 to 600.

  6. What is the collector-emitter saturation voltage (VCE(sat)) of this transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -0.7 V.

  7. What package type is used for the BC807-40W-F2-0000HF transistor?

    The transistor is housed in a SOT323 (SC-70) surface-mounted device (SMD) plastic package.

  8. Is the BC807-40W-F2-0000HF transistor suitable for automotive applications?
  9. What is the transition frequency (fT) of this transistor?

    The transition frequency (fT) is 100 MHz.

  10. What are some common applications of the BC807-40W-F2-0000HF transistor?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):200nA
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.21
381

Please send RFQ , we will respond immediately.

Same Series
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20Z0X/AA
DD15S20Z0X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES/AA
DD15S200ES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD44S32S60T0
DD44S32S60T0
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC807-40W-F2-0000HF BC807-40-F2-0000HF
Manufacturer Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 200nA 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 200 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-323 SOT-23

Related Product By Categories

PZT2907AT1G
PZT2907AT1G
onsemi
TRANS PNP 60V 0.6A SOT223
TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
SBC846ALT1G
SBC846ALT1G
onsemi
TRANS NPN 65V 0.1A SOT23-3
TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
MMBT4124LT1G
MMBT4124LT1G
onsemi
TRANS NPN 25V 0.2A SOT23-3
SMMBT2222ALT3G
SMMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MJB44H11G
MJB44H11G
onsemi
TRANS NPN 80V 10A D2PAK
BC847BW-AQ
BC847BW-AQ
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
BC857AQBAZ
BC857AQBAZ
Nexperia USA Inc.
BC857AQB/SOT8015/DFN1110D-3

Related Product By Brand

1N4937G-D1-3000
1N4937G-D1-3000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 1A DO41
BAS40X-F2-0000HF
BAS40X-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 200MA SOD523
BAS16WS-F2-0000HF
BAS16WS-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOD323
BAS16-F2-0000HF
BAS16-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 75V 200MA SOT23
MUR860-B1-0000HF
MUR860-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 8A TO220AC
MUR840-B1-0000HF
MUR840-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 400V 8A TO220AC
BZX84C30-F2-0000HF
BZX84C30-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 30V 0.35W SOT-23-3L
MMBT2222A-F2-0000HF
MMBT2222A-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 40V 0.6A SOT23
BC817-40W-F2-0000HF
BC817-40W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.5A SOT323
BC807-25-F2-0000HF
BC807-25-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS PNP 45V 0.5A SOT23
BC847B-F2-0000HF
BC847B-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.1A SOT23
2N7002W-F2-0000HF
2N7002W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-323