BC807-40W-F2-0000HF
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd BC807-40W-F2-0000HF

Manufacturer No:
BC807-40W-F2-0000HF
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40W-F2-0000HF is a PNP bipolar junction transistor (BJT) manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is part of the BC807 series, known for its general-purpose and low VCE(sat) characteristics. It is housed in a small SOT323 (SC-70) surface-mounted device (SMD) plastic package, making it suitable for a wide range of applications where space is limited.

This transistor is AEC-Q101 qualified and PPAP capable, which makes it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -45 V
Collector-Base Voltage VCBO -50 V
Emitter-Base Voltage VEB0 -5.0 V
Collector Current - Continuous IC -500 mA
Maximum Operating Junction Temperature TJ 150 °C
Transition Frequency fT 100 MHz
Forward Current Transfer Ratio (hFE) hFE 250 - 600 -
Collector-Emitter Saturation Voltage VCE(sat) -0.7 V
Base-Emitter On Voltage VBE(on) -1.2 V

Key Features

  • Suitable for AF-driver stages and low power output stages.
  • Epitaxial planar die construction for high stability and reliability.
  • Complementary NPN type available (BC817).
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free/BFR-free, and RoHS compliant.
  • Small SOT323 (SC-70) surface-mounted device (SMD) plastic package, ideal for space-constrained designs.
  • High current gain with a minimum hFE of 250 and a maximum of 600.
  • Low collector-emitter saturation voltage (VCE(sat)) of -0.7 V.

Applications

  • General power amplifier and switching applications.
  • Automotive electronics, including systems requiring AEC-Q101 qualification.
  • Industrial control and automation.
  • Consumer electronics, such as audio equipment and low power output stages.
  • Mobile and wearable devices where space and power efficiency are critical.

Q & A

  1. What is the maximum collector-emitter voltage of the BC807-40W-F2-0000HF transistor?

    The maximum collector-emitter voltage (VCEO) is -45 V.

  2. What is the continuous collector current rating of this transistor?

    The continuous collector current (IC) is -500 mA.

  3. What is the maximum operating junction temperature for this transistor?

    The maximum operating junction temperature (TJ) is 150°C.

  4. Is the BC807-40W-F2-0000HF transistor RoHS compliant?
  5. What is the typical current gain (hFE) of this transistor?

    The typical current gain (hFE) ranges from 250 to 600.

  6. What is the collector-emitter saturation voltage (VCE(sat)) of this transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -0.7 V.

  7. What package type is used for the BC807-40W-F2-0000HF transistor?

    The transistor is housed in a SOT323 (SC-70) surface-mounted device (SMD) plastic package.

  8. Is the BC807-40W-F2-0000HF transistor suitable for automotive applications?
  9. What is the transition frequency (fT) of this transistor?

    The transition frequency (fT) is 100 MHz.

  10. What are some common applications of the BC807-40W-F2-0000HF transistor?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):200nA
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:200 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
0 Remaining View Similar

In Stock

$0.21
381

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X/AA
DD15S2S5WV5X/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200V3S/AA
DD15S200V3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
M24308/24-67Z
M24308/24-67Z
CONN D-SUB HD PLUG 15POS SLDR
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0V30
DD44S32S0V30
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC807-40W-F2-0000HF BC807-40-F2-0000HF
Manufacturer Yangzhou Yangjie Electronic Technology Co.,Ltd Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 200nA 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 200 mW 300 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-323 SOT-23

Related Product By Categories

PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
MPSA29-D26Z
MPSA29-D26Z
onsemi
TRANS NPN DARL 100V 0.8A TO92-3
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
BC846AQB-QZ
BC846AQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
TIP122-BP
TIP122-BP
Micro Commercial Co
TRANS NPN DARL 100V 5A TO220AB
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
BC807-25W/MIX
BC807-25W/MIX
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323
BC857AQBAZ
BC857AQBAZ
Nexperia USA Inc.
BC857AQB/SOT8015/DFN1110D-3

Related Product By Brand

BAS70-05-F2-0000HF
BAS70-05-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 70V 0.07A SOT-23-
BAS70-04-F2-0000HF
BAS70-04-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 70V 0.07A SOT-23-
BAV199-F2-0000HF
BAV199-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 100V 0.125A SOT-
MUR1660CT-B1-0000HF
MUR1660CT-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
FAST DIODE 600V 16A TO-220AB
MBR0530-F2-0000HF
MBR0530-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 30V 500MA SOD123
BAS21-F2-0000HF
BAS21-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 250V 200MA SOT23
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
BZX84B6V2-F2-0000HF
BZX84B6V2-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 6.2V 0.35W SOT-23-3L
BZX84C7V5-F2-0000HF
BZX84C7V5-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 7.5V 0.35W SOT-23-3L
BC847CW-F2-0000HF
BC847CW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.1A SOT323
BC817-40W-F2-0000HF
BC817-40W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS NPN 45V 0.5A SOT323
BSS123-F2-0000HF
BSS123-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 100V 0.2A SOT-23-3L