Overview
The BC807-40W-F2-0000HF is a PNP bipolar junction transistor (BJT) manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. This transistor is part of the BC807 series, known for its general-purpose and low VCE(sat) characteristics. It is housed in a small SOT323 (SC-70) surface-mounted device (SMD) plastic package, making it suitable for a wide range of applications where space is limited.
This transistor is AEC-Q101 qualified and PPAP capable, which makes it suitable for automotive and other applications requiring unique site and control change requirements. It is also Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | -45 | V |
Collector-Base Voltage | VCBO | -50 | V |
Emitter-Base Voltage | VEB0 | -5.0 | V |
Collector Current - Continuous | IC | -500 | mA |
Maximum Operating Junction Temperature | TJ | 150 | °C |
Transition Frequency | fT | 100 | MHz |
Forward Current Transfer Ratio (hFE) | hFE | 250 - 600 | - |
Collector-Emitter Saturation Voltage | VCE(sat) | -0.7 | V |
Base-Emitter On Voltage | VBE(on) | -1.2 | V |
Key Features
- Suitable for AF-driver stages and low power output stages.
- Epitaxial planar die construction for high stability and reliability.
- Complementary NPN type available (BC817).
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
- Small SOT323 (SC-70) surface-mounted device (SMD) plastic package, ideal for space-constrained designs.
- High current gain with a minimum hFE of 250 and a maximum of 600.
- Low collector-emitter saturation voltage (VCE(sat)) of -0.7 V.
Applications
- General power amplifier and switching applications.
- Automotive electronics, including systems requiring AEC-Q101 qualification.
- Industrial control and automation.
- Consumer electronics, such as audio equipment and low power output stages.
- Mobile and wearable devices where space and power efficiency are critical.
Q & A
- What is the maximum collector-emitter voltage of the BC807-40W-F2-0000HF transistor?
The maximum collector-emitter voltage (VCEO) is -45 V.
- What is the continuous collector current rating of this transistor?
The continuous collector current (IC) is -500 mA.
- What is the maximum operating junction temperature for this transistor?
The maximum operating junction temperature (TJ) is 150°C.
- Is the BC807-40W-F2-0000HF transistor RoHS compliant?
- What is the typical current gain (hFE) of this transistor?
The typical current gain (hFE) ranges from 250 to 600.
- What is the collector-emitter saturation voltage (VCE(sat)) of this transistor?
The collector-emitter saturation voltage (VCE(sat)) is -0.7 V.
- What package type is used for the BC807-40W-F2-0000HF transistor?
The transistor is housed in a SOT323 (SC-70) surface-mounted device (SMD) plastic package.
- Is the BC807-40W-F2-0000HF transistor suitable for automotive applications?
- What is the transition frequency (fT) of this transistor?
The transition frequency (fT) is 100 MHz.
- What are some common applications of the BC807-40W-F2-0000HF transistor?