1N4007G-D1-3000
  • Share:

Yangzhou Yangjie Electronic Technology Co.,Ltd 1N4007G-D1-3000

Manufacturer No:
1N4007G-D1-3000
Manufacturer:
Yangzhou Yangjie Electronic Technology Co.,Ltd
Package:
Cut Tape (CT)
Description:
DIODE GEN PURP 1000V 1A DO41
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 1N4007G-D1-3000 is a general-purpose rectifier diode produced by Yangzhou Yangjie Electronic Technology Co., Ltd., although the specific datasheet for this exact part number is not directly available from the provided sources. However, based on the standard specifications of the 1N4007 series, this diode is designed for use in various rectification applications, including power supplies, inverters, converters, and freewheeling diodes.

These diodes are known for their high current capability, low forward voltage drop, and surge overload rating, making them suitable for a wide range of electrical and electronic systems.

Key Specifications

Parameter Symbol 1N4007G Unit
Maximum Repetitive Peak Reverse Voltage VRRM 1000 V
Maximum RMS Voltage VRMS 700 V
Maximum DC Blocking Voltage VDC 1000 V
Maximum Average Forward Rectified Current IF(AV) 1.0 A
Peak Forward Surge Current (8.3 ms sine-wave) IFSM 30 A
Peak Forward Surge Current (square wave, tp = 1 ms) IFSM 45 A
Maximum Instantaneous Forward Voltage VF 1.1 V
Maximum DC Reverse Current IR 5.0 μA
Operating Junction and Storage Temperature Range TJ, TSTG -50 to +150 °C
Case Type DO-41 (DO-204AL)

Key Features

  • High Current Capability: The diode can handle a maximum average forward rectified current of 1.0 A.
  • Low Forward Voltage Drop: The diode has a maximum instantaneous forward voltage of 1.1 V, ensuring efficient operation.
  • Surge Overload Rating: The diode can withstand peak forward surge currents up to 30 A (8.3 ms sine-wave) and 45 A (square wave, tp = 1 ms).
  • RoHS Compliant: The diode is lead-free and RoHS compliant, meeting environmental standards.
  • High Temperature Rating: The diode operates within a junction and storage temperature range of -50 to +150 °C.
  • UL Flammability Classification: The molded epoxy body meets UL 94 V-0 flammability rating.

Applications

  • Power Supplies: Used in the rectification stage of power supplies to convert AC to DC.
  • Inverters and Converters: Employed in inverter and converter circuits to manage power flow.
  • Freewheeling Diodes: Used to protect circuits from back EMF in inductive loads.
  • Automotive Electronics: Suitable for use in automotive systems due to its robust specifications.
  • Industrial and Consumer Electronics: Used in various industrial and consumer electronic devices requiring reliable rectification.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the 1N4007G diode?

    The maximum repetitive peak reverse voltage is 1000 V.

  2. What is the maximum average forward rectified current of the 1N4007G diode?

    The maximum average forward rectified current is 1.0 A.

  3. What is the peak forward surge current rating of the 1N4007G diode?

    The peak forward surge current rating is up to 30 A (8.3 ms sine-wave) and 45 A (square wave, tp = 1 ms).

  4. Is the 1N4007G diode RoHS compliant?
  5. What is the operating junction and storage temperature range of the 1N4007G diode?

    The operating junction and storage temperature range is -50 to +150 °C.

  6. What is the case type of the 1N4007G diode?

    The case type is DO-41 (DO-204AL).

  7. What are the typical applications of the 1N4007G diode?

    The diode is used in power supplies, inverters, converters, freewheeling diodes, automotive electronics, and various industrial and consumer electronic devices.

  8. Does the 1N4007G diode meet any specific flammability standards?
  9. What is the maximum instantaneous forward voltage of the 1N4007G diode?

    The maximum instantaneous forward voltage is 1.1 V.

  10. What is the maximum DC reverse current of the 1N4007G diode?

    The maximum DC reverse current is 5.0 μA.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:2.5 µA @ 1000 V
Capacitance @ Vr, F:6pF @ 4V, 1MHz
Mounting Type:Through Hole
Package / Case:DO-204AL, DO-41, Axial
Supplier Device Package:DO-204AL (DO-41)
Operating Temperature - Junction:-55°C ~ 150°C
0 Remaining View Similar

In Stock

$0.22
1,635

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S20LVLX
DD15S20LVLX
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV30/AA
DD26M20HV30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S0T0
DD26S2S0T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X
DD26S2S0V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC46W4S100T2S/AA
CBC46W4S100T2S/AA
CONN D-SUB RCPT 46POS CRIMP

Related Product By Categories

BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
MUR460M_AY_00001
MUR460M_AY_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
BAT54XV2T5G
BAT54XV2T5G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
BAT42W-E3-18
BAT42W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
MUR820
MUR820
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO220AC
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
MUR120RL
MUR120RL
onsemi
DIODE GEN PURP 200V 1A AXIAL
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
MUR160GP-AP
MUR160GP-AP
Micro Commercial Co
DIODE GPP SUPER FAST 1A DO-41

Related Product By Brand

SMBJ5.0CA-F1-0000HF
SMBJ5.0CA-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TVS DIODE 5VWM 9.2VC DO214AA
BAW56WT-F2-0000HF
BAW56WT-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 75V 0.15A SOT-32
BAV23C-F2-0000HF
BAV23C-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
GEN PURP DIODE 250V 0.2A SOT-23
1N4004G-D1-3000
1N4004G-D1-3000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 400V 1A DO41
1N4007G-D1-3000
1N4007G-D1-3000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 1A DO41
BAS21-F2-0000HF
BAS21-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 250V 200MA SOT23
MUR840-B1-0000HF
MUR840-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 400V 8A TO220AC
BZX84C3V0-F2-0000HF
BZX84C3V0-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 3V 0.35W SOT-23-3L
BZX84C7V5-F2-0000HF
BZX84C7V5-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 7.5V 0.35W SOT-23-3L
BC857C-F2-0000HF
BC857C-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS PNP 45V 0.1A SOT23
BC857CW-F2-0000HF
BC857CW-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TRANS PNP 45V 0.1A SOT323
2N7002W-F2-0000HF
2N7002W-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-323