NXH240B120H3Q1PG
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onsemi NXH240B120H3Q1PG

Manufacturer No:
NXH240B120H3Q1PG
Manufacturer:
onsemi
Package:
Tray
Description:
PIM Q1 3 CHANNEL IGBT+SIC BOOST
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NXH240B120H3Q1PG is a sophisticated power module developed by onsemi, designed to integrate advanced semiconductor technologies for high-efficiency and reliable power management. This module features a three-channel BOOST stage, combining ultra field stop trench IGBTs (Insulated Gate Bipolar Transistors) with Silicon Carbide (SiC) diodes. This hybrid approach minimizes conduction and switching losses, enabling designers to achieve superior performance and reliability in various power applications.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage (IGBT) VCES 1200 V
Gate-Emitter Voltage (IGBT) VGE ±20 V
Continuous Collector Current (IGBT) @ Th = 80°C (TJ = 175°C) IC 68 A
Pulsed Collector Current (IGBT) @ TJ = 175°C ICpulse 204 A
Maximum Power Dissipation (IGBT) @ TJ = 175°C Ptot 158 W
Peak Repetitive Reverse Voltage (SiC Diode) VRRM 1200 V
Continuous Forward Current (SiC Diode) @ Th = 80°C (TJ = 175°C) IF 25 A
Minimum Operating Junction Temperature TJMIN -40 °C
Maximum Operating Junction Temperature TJMAX 150 °C

Key Features

  • 1200 V Ultra Field Stop IGBTs: Providing high voltage handling capability.
  • Low Reverse Recovery and Fast Switching SiC Diodes: Minimizing switching losses and enhancing efficiency.
  • Low Inductive Layout: Reducing electromagnetic interference and improving overall performance.
  • Press-fit Pins: Simplifying assembly and ensuring reliable connections.
  • Thermistor Integration: For temperature monitoring and control.

Applications

  • Solar Inverters: Optimizing energy conversion in solar power systems.
  • Energy Storage Systems (ESS): Enhancing the efficiency and reliability of energy storage solutions.

Q & A

  1. What is the maximum collector-emitter voltage of the NXH240B120H3Q1PG?

    The maximum collector-emitter voltage is 1200 V.

  2. What type of IGBTs are used in the NXH240B120H3Q1PG?

    The module uses ultra field stop trench IGBTs.

  3. What is the continuous collector current rating of the IGBTs at 80°C?

    The continuous collector current rating is 68 A.

  4. What is the peak repetitive reverse voltage of the SiC diodes?

    The peak repetitive reverse voltage is 1200 V.

  5. What are the typical applications of the NXH240B120H3Q1PG?

    The module is typically used in solar inverters and energy storage systems (ESS).

  6. What is the minimum operating junction temperature of the module?

    The minimum operating junction temperature is -40°C.

  7. What is the maximum operating junction temperature of the module?

    The maximum operating junction temperature is 150°C.

  8. Does the module include thermistor integration?
  9. What type of pins does the module use?

    The module uses press-fit pins for easy assembly.

  10. What are the benefits of using SiC diodes in this module?

    The SiC diodes provide low reverse recovery and fast switching, minimizing losses and enhancing efficiency.

Product Attributes

IGBT Type:Trench Field Stop
Configuration:Triple, Dual - Common Source
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):68 A
Power - Max:158 W
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 80A
Current - Collector Cutoff (Max):400 µA
Input Capacitance (Cies) @ Vce:18.151 nF @ 20 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:32-PIM (71x37.4)
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In Stock

$94.60
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