A1C15S12M3-F
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STMicroelectronics A1C15S12M3-F

Manufacturer No:
A1C15S12M3-F
Manufacturer:
STMicroelectronics
Package:
Tray
Description:
IGBT MOD 1200V 15A ACEPACK1
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The A1C15S12M3-F is a high-performance IGBT (Insulated Gate Bipolar Transistor) module manufactured by STMicroelectronics. This module is part of the ACEPACK™ 1 series and is designed for three-phase converter, inverter, and brake applications. It leverages advanced IGBT technology to optimize the balance between conduction and switching losses, thereby maximizing the efficiency of converter systems up to 20 kHz.

Key Specifications

ParameterValue
Voltage Rating1200 V
Current Rating15 A
Power Dissipation142.8 W
Maximum Junction Temperature150 °C
Vce(on) at 15 A, 25 °C1.95 V
Package TypeACEPACK™ 1, Chassis Mount

Key Features

  • Advanced IGBT technology for optimal balance between conduction and switching losses.
  • Three-phase converter, inverter, and brake functionality.
  • High efficiency up to 20 kHz switching frequency.
  • High voltage rating of 1200 V and current rating of 15 A.
  • Maximum junction temperature of 150 °C.
  • Chassis mount package for robust and reliable installation.

Applications

The A1C15S12M3-F IGBT module is suitable for a variety of high-power applications, including:

  • Industrial motor drives and control systems.
  • Renewable energy systems such as wind and solar power inverters.
  • Electric vehicle charging stations and traction systems.
  • Power supplies and UPS systems requiring high efficiency and reliability.

Q & A

  1. What is the voltage rating of the A1C15S12M3-F IGBT module?
    The voltage rating is 1200 V.
  2. What is the current rating of the A1C15S12M3-F IGBT module?
    The current rating is 15 A.
  3. What is the maximum junction temperature of the A1C15S12M3-F?
    The maximum junction temperature is 150 °C.
  4. What is the power dissipation of the A1C15S12M3-F?
    The power dissipation is 142.8 W.
  5. What type of package does the A1C15S12M3-F use?
    The package type is ACEPACK™ 1, chassis mount.
  6. What is the typical Vce(on) at 15 A and 25 °C for the A1C15S12M3-F?
    The typical Vce(on) is 1.95 V.
  7. What are the primary applications of the A1C15S12M3-F IGBT module?
    The primary applications include industrial motor drives, renewable energy systems, electric vehicle charging stations, and power supplies.
  8. What is the switching frequency range for which the A1C15S12M3-F is optimized?
    The module is optimized for switching frequencies up to 20 kHz.
  9. What technology does the A1C15S12M3-F use to maximize efficiency?
    The module uses advanced IGBT technology to maximize efficiency by balancing conduction and switching losses.
  10. Where can I purchase the A1C15S12M3-F IGBT module?
    The module can be purchased from various electronics distributors such as Digi-Key, Mouser, Farnell, and STMicroelectronics’ official website.

Product Attributes

IGBT Type:Trench Field Stop
Configuration:Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):15 A
Power - Max:142.8 W
Vce(on) (Max) @ Vge, Ic:2.45V @ 15V, 15A
Current - Collector Cutoff (Max):100 µA
Input Capacitance (Cies) @ Vce:985 pF @ 25 V
Input:Three Phase Bridge Rectifier
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:ACEPACK™ 1
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