FF600R12ME4EB11BOSA1
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Infineon Technologies FF600R12ME4EB11BOSA1

Manufacturer No:
FF600R12ME4EB11BOSA1
Manufacturer:
Infineon Technologies
Package:
Tray
Description:
IGBT MOD 1200V 995A 4050W
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The FF600R12ME4EB11BOSA1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. This module is part of the EconoDUAL™3 family, designed for medium to high power applications. It features a combination of Trench/Fieldstop IGBTs and Emitter Controlled 4 diodes, making it suitable for various industrial and automotive applications. The module is known for its high reliability, low switching losses, and robust thermal performance.

Key Specifications

Parameter Symbol Note or Test Condition Values Unit
Collector-Emitter Voltage VCES Tvj = 25 °C 1200 V
Continuous DC Collector Current ICDC Tvj max = 175 °C, TC = 100 °C 600 A
Repetitive Peak Collector Current ICRM tp limited by Tvj op 1200 A
Gate-Emitter Peak Voltage VGES ±20 V
Collector-Emitter Saturation Voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 25 °C 1.75 - 2.10 V
Isolation Test Voltage VISOL RMS, f = 50 Hz, t = 1 min 2.5 kV
Creepage Distance dCreep nom terminal to baseplate, nom. > 15 mm
Weight G 345 g

Key Features

  • High Performance IGBTs: The module features Trench/Fieldstop IGBTs, which offer low switching losses and high efficiency.
  • Emitter Controlled Diodes: Includes Emitter Controlled 4 diodes for improved switching characteristics.
  • Robust Thermal Performance: Designed with a copper baseplate and internal isolation, ensuring good thermal conductivity and reliability.
  • Compact Design: Part of the EconoDUAL™3 family, offering a compact and space-efficient solution.
  • High Isolation: Features an isolation test voltage of 2.5 kV and a creepage distance of more than 15 mm.
  • Easy Integration: Compatible with SCALE-2 plug-and-play drivers, such as the 2SP0115T, for simplified system design and operation.

Applications

  • Industrial Power Conversion: Suitable for use in industrial power conversion systems, including inverters and converters.
  • Automotive Systems: Used in various automotive applications, such as electric vehicle charging systems and traction drives.
  • Renewable Energy Systems: Applicable in solar and wind power systems for efficient energy conversion.
  • Motor Drives: Ideal for high-power motor drive applications requiring high reliability and efficiency.

Q & A

  1. What is the collector-emitter voltage rating of the FF600R12ME4EB11BOSA1?

    The collector-emitter voltage rating is 1200 V.

  2. What is the maximum continuous DC collector current for this module?

    The maximum continuous DC collector current is 600 A at a junction temperature of up to 175 °C.

  3. What type of diodes are included in this IGBT module?

    The module includes Emitter Controlled 4 diodes.

  4. What is the isolation test voltage for this module?

    The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.

  5. Can this module be used with plug-and-play drivers?

    Yes, it is compatible with SCALE-2 plug-and-play drivers like the 2SP0115T.

  6. What is the typical collector-emitter saturation voltage for this module?

    The typical collector-emitter saturation voltage is between 1.75 V and 2.10 V at IC = 600 A and VGE = 15 V at 25 °C.

  7. What is the weight of the FF600R12ME4EB11BOSA1 module?

    The weight of the module is 345 grams.

  8. What are the common applications for this IGBT module?

    Common applications include industrial power conversion, automotive systems, renewable energy systems, and motor drives.

  9. What is the gate-emitter peak voltage rating for this module?

    The gate-emitter peak voltage rating is ±20 V.

  10. How does the module ensure thermal reliability?

    The module features a copper baseplate and internal isolation, ensuring good thermal conductivity and reliability.

Product Attributes

IGBT Type:Trench Field Stop
Configuration:Half Bridge
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):995 A
Power - Max:4050 W
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 600A
Current - Collector Cutoff (Max):3 mA
Input Capacitance (Cies) @ Vce:37 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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In Stock

$328.58
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Similar Products

Part Number FF600R12ME4EB11BOSA1 FF600R12ME4PB11BOSA1 FF600R12ME4AB11BOSA1 FF600R12ME4CB11BOSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Not For New Designs Discontinued at Digi-Key Discontinued at Digi-Key
IGBT Type Trench Field Stop - Trench Field Stop Trench Field Stop
Configuration Half Bridge - 2 Independent 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V - 1200 V 1200 V
Current - Collector (Ic) (Max) 995 A - - 1060 A
Power - Max 4050 W - 3350 W 4050 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A - 2.1V @ 15V, 600A 2.1V @ 15V, 600A
Current - Collector Cutoff (Max) 3 mA - 3 mA 3 mA
Input Capacitance (Cies) @ Vce 37 nF @ 25 V - 37 nF @ 25 V 37 nF @ 25 V
Input Standard - Standard Standard
NTC Thermistor Yes - Yes Yes
Operating Temperature -40°C ~ 150°C - -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Chassis Mount - Chassis Mount Chassis Mount
Package / Case Module - Module Module
Supplier Device Package Module - Module Module

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