STGE200NB60S
  • Share:

STMicroelectronics STGE200NB60S

Manufacturer No:
STGE200NB60S
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT MOD 600V 200A 600W ISOTOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGE200NB60S is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed by STMicroelectronics. It is part of the advanced PowerMESH™ IGBT family, which utilizes the latest high voltage technology based on a patented strip layout. This component is engineered to provide low drop and high current handling capabilities, making it suitable for a variety of power management and control applications.

Key Specifications

ParameterValue
VCE(sat) (Saturation Voltage)1.7 V (typical at IC = 150 A, VGE = 15 V)
VCES (Collector-Emitter Voltage)600 V
IC (Collector Current)150 A
TJ (Junction Temperature)-40°C to 150°C
Eon (Turn-on Energy)12.5 mJ (typical at IC = 150 A, VGE = 15 V)
Eoff (Turn-off Energy)10.5 mJ (typical at IC = 150 A, VGE = 15 V)
PackageISOTOP (International Standard Outline Type)

Key Features

  • Low VCE(sat) for reduced power losses.
  • High current handling capability of up to 150 A.
  • Wide junction temperature range from -40°C to 150°C.
  • Advanced PowerMESH™ technology for improved performance and reliability.
  • Patented strip layout for enhanced high voltage operation.

Applications

The STGE200NB60S IGBT is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power inverters.
  • Industrial automation and control systems.
  • High-power switching and power management systems.

Q & A

  1. What is the maximum collector current of the STGE200NB60S? The maximum collector current is 150 A.
  2. What is the collector-emitter voltage rating of the STGE200NB60S? The collector-emitter voltage rating is 600 V.
  3. What is the typical saturation voltage of the STGE200NB60S? The typical saturation voltage is 1.7 V at IC = 150 A and VGE = 15 V.
  4. What is the junction temperature range of the STGE200NB60S? The junction temperature range is from -40°C to 150°C.
  5. What technology is used in the STGE200NB60S? The STGE200NB60S uses the advanced PowerMESH™ technology.
  6. What is the package type of the STGE200NB60S? The package type is ISOTOP (International Standard Outline Type).
  7. What are some typical applications of the STGE200NB60S? Typical applications include power supplies, motor drives, renewable energy systems, industrial automation, and high-power switching systems.
  8. What is the turn-on energy of the STGE200NB60S? The turn-on energy is typically 12.5 mJ at IC = 150 A and VGE = 15 V.
  9. What is the turn-off energy of the STGE200NB60S? The turn-off energy is typically 10.5 mJ at IC = 150 A and VGE = 15 V.
  10. Why is the STGE200NB60S considered advanced? It is considered advanced due to its patented strip layout and the use of the latest high voltage technology.

Product Attributes

IGBT Type:- 
Configuration:Single
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):200 A
Power - Max:600 W
Vce(on) (Max) @ Vge, Ic:1.6V @ 15V, 100A
Current - Collector Cutoff (Max):500 µA
Input Capacitance (Cies) @ Vce:1.56 nF @ 25 V
Input:Standard
NTC Thermistor:No
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SOT-227-4, miniBLOC
Supplier Device Package:ISOTOP
0 Remaining View Similar

In Stock

$34.28
17

Please send RFQ , we will respond immediately.

Related Product By Categories

FF600R12ME4BOSA1
FF600R12ME4BOSA1
Infineon Technologies
IGBT MODULE 1200V 4050W
FF600R12ME4AB11BOSA1
FF600R12ME4AB11BOSA1
Infineon Technologies
IGBT MODULE 1200V 3350W
STGE200NB60S
STGE200NB60S
STMicroelectronics
IGBT MOD 600V 200A 600W ISOTOP
A1C15S12M3
A1C15S12M3
STMicroelectronics
IGBT MOD 1200V 15A ACEPACK1
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
FF600R12ME4WB73BPSA1
FF600R12ME4WB73BPSA1
Infineon Technologies
MEDIUM POWER ECONO
NXH240B120H3Q1PG
NXH240B120H3Q1PG
onsemi
PIM Q1 3 CHANNEL IGBT+SIC BOOST
FF600R12ME4B73BPSA2
FF600R12ME4B73BPSA2
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
FF600R12ME4PB72BPSA1
FF600R12ME4PB72BPSA1
Infineon Technologies
MEDIUM POWER ECONO
FF600R12ME4PB11BOSA1
FF600R12ME4PB11BOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4CPB11BPSA1
FF600R12ME4CPB11BPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
A1C15S12M3-F
A1C15S12M3-F
STMicroelectronics
IGBT MOD 1200V 15A ACEPACK1

Related Product By Brand

SM6T12CA
SM6T12CA
STMicroelectronics
TVS DIODE 10.2VWM 21.7VC SMB
STP24N60M2
STP24N60M2
STMicroelectronics
MOSFET N-CH 600V 18A TO220
STL160N4F7
STL160N4F7
STMicroelectronics
MOSFET N-CH 40V 120A POWERFLAT
STL120N4F6AG
STL120N4F6AG
STMicroelectronics
MOSFET N-CH 40V 55A POWERFLAT
STM32L486RGT6
STM32L486RGT6
STMicroelectronics
IC MCU 32BIT 1MB FLASH 64LQFP
STM32F423RHT6
STM32F423RHT6
STMicroelectronics
IC MCU 32BIT 1.5MB FLASH 64LQFP
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
L9959S-TR-D
L9959S-TR-D
STMicroelectronics
IC H-BRIDGE HIGH SIDE 24PSSOP
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
VNQ810PTR-E
VNQ810PTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
L9779WDM
L9779WDM
STMicroelectronics
HI-QUAD 64 14X14 POW
L78L06ACZ-AP
L78L06ACZ-AP
STMicroelectronics
IC REG LINEAR 6V 100MA TO92-3