FF600R12ME4BOSA1
  • Share:

Infineon Technologies FF600R12ME4BOSA1

Manufacturer No:
FF600R12ME4BOSA1
Manufacturer:
Infineon Technologies
Package:
Tray
Description:
IGBT MODULE 1200V 4050W
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FF600R12ME4BOSA1 is an advanced IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. This module is part of the EconoDUAL™3 series, which is designed to offer high power density and reliability in various industrial applications. The FF600R12ME4BOSA1 features Trench/Fieldstop IGBTs and emitter-controlled diodes, making it suitable for high-power converters, motor drives, servo drives, UPS systems, and wind turbines.

Key Specifications

Parameter Symbol Note or Test Condition Values Unit
Collector-Emitter Voltage VCES Tvj = 25 °C 1200 V
Continuous DC Collector Current ICDC Tvj max = 175 °C, TC = 100 °C 600 A
Repetitive Peak Collector Current ICRM tp limited by Tvj op 1200 A
Gate-Emitter Peak Voltage VGES ±20 V
Collector-Emitter Saturation Voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 25 °C 1.75 - 2.10 V
Operating Junction Temperature Tvj op -40 °C to 150 °C °C
Weight 345 g

Key Features

  • High Power Density: The module offers high power density, making it ideal for applications where space is limited.
  • Isolated Base Plate: The module features an isolated base plate, enhancing electrical isolation and safety.
  • Low VCE,sat: The FF600R12ME4BOSA1 has a low collector-emitter saturation voltage, which reduces energy losses and improves efficiency.
  • Positive Temperature Coefficient of VCE,sat: This feature helps in ensuring stable operation over a wide temperature range.
  • Compliance with Industrial Standards: Qualified for industrial applications according to IEC 60747, 60749, and 60068 tests.

Applications

  • High-Power Converters: Suitable for high-power conversion applications due to its high current and voltage ratings.
  • Motor Drives: Ideal for motor drive systems requiring high power and efficiency.
  • Servo Drives: Used in servo drive applications where precise control and high power are necessary.
  • UPS Systems: Applicable in uninterruptible power supply systems for reliable power backup.
  • Wind Turbines: Employed in wind turbine systems for efficient power conversion.

Q & A

  1. What is the maximum collector-emitter voltage of the FF600R12ME4BOSA1?

    The maximum collector-emitter voltage is 1200 V.

  2. What is the continuous DC collector current rating of the module?

    The continuous DC collector current is 600 A at a maximum junction temperature of 175 °C.

  3. What is the operating junction temperature range of the FF600R12ME4BOSA1?

    The operating junction temperature range is -40 °C to 150 °C.

  4. What are the key features of the FF600R12ME4BOSA1 module?

    The key features include high power density, isolated base plate, low VCE,sat, and positive temperature coefficient of VCE,sat.

  5. What are the typical applications of the FF600R12ME4BOSA1 module?

    Typical applications include high-power converters, motor drives, servo drives, UPS systems, and wind turbines.

  6. Is the FF600R12ME4BOSA1 module compliant with industrial standards?

    Yes, it is qualified for industrial applications according to IEC 60747, 60749, and 60068 tests.

  7. What is the weight of the FF600R12ME4BOSA1 module?

    The weight of the module is 345 grams.

  8. What is the gate-emitter peak voltage rating of the module?

    The gate-emitter peak voltage rating is ±20 V.

  9. What is the collector-emitter saturation voltage (VCE,sat) of the FF600R12ME4BOSA1 at 25 °C?

    The VCE,sat at 25 °C is between 1.75 V and 2.10 V.

  10. Does the FF600R12ME4BOSA1 module have any specific mounting requirements?

    Yes, it requires mounting according to valid application notes with specified torque values.

Product Attributes

IGBT Type:Trench Field Stop
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):- 
Power - Max:4050 W
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 600A
Current - Collector Cutoff (Max):3 mA
Input Capacitance (Cies) @ Vce:37 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
0 Remaining View Similar

In Stock

$369.90
4

Please send RFQ , we will respond immediately.

Similar Products

Part Number FF600R12ME4BOSA1 FF600R12ME4CBOSA1 FF600R17ME4BOSA1 FF600R12ME4PBOSA1 FF300R12ME4BOSA1 FF600R12IE4BOSA1 FF600R12KE4BOSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Active Not For New Designs Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop - Trench Field Stop Trench Field Stop Trench Field Stop
Configuration 2 Independent Half Bridge 2 Independent - 2 Independent Half Bridge Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V 1700 V - 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) - 1060 A - - 450 A 600 A 600 A
Power - Max 4050 W 4050 W - - 1600 W 3350 W -
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A 2.1V @ 15V, 600A 2.3V @ 15V, 600A - 2.1V @ 15V, 300A 2.05V @ 15V, 600A 2.2V @ 15V, 600A
Current - Collector Cutoff (Max) 3 mA 3 mA 1 mA - 3 mA 5 mA 5 mA
Input Capacitance (Cies) @ Vce 37 nF @ 25 V 37 nF @ 25 V 48 nF @ 25 V - 18.5 nF @ 25 V 37 nF @ 25 V 38 nF @ 25 V
Input Standard Standard Standard - Standard Standard Standard
NTC Thermistor Yes Yes Yes - Yes Yes No
Operating Temperature -40°C ~ 150°C -40°C ~ 150°C (TJ) -40°C ~ 150°C - -40°C ~ 150°C -40°C ~ 150°C (TJ) -40°C ~ 150°C
Mounting Type Chassis Mount Chassis Mount Chassis Mount - Chassis Mount Chassis Mount Chassis Mount
Package / Case Module Module Module - Module Module Module
Supplier Device Package Module Module Module - Module Module Module

Related Product By Categories

FS820R08A6P2LBBPSA1
FS820R08A6P2LBBPSA1
Infineon Technologies
IGBT MODULE 820A HYBRID PK DRIVE
STGE200NB60S
STGE200NB60S
STMicroelectronics
IGBT MOD 600V 200A 600W ISOTOP
A1C15S12M3
A1C15S12M3
STMicroelectronics
IGBT MOD 1200V 15A ACEPACK1
FF600R12ME4WB73BPSA1
FF600R12ME4WB73BPSA1
Infineon Technologies
MEDIUM POWER ECONO
NXH240B120H3Q1PG
NXH240B120H3Q1PG
onsemi
PIM Q1 3 CHANNEL IGBT+SIC BOOST
FF600R12ME4B11BPSA2
FF600R12ME4B11BPSA2
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4CPBPSA1
FF600R12ME4CPBPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4CPB11BPSA1
FF600R12ME4CPB11BPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4B11BPSA1
FF600R12ME4B11BPSA1
Infineon Technologies
FF600R12 - IGBT MODULE
STGE50NB60HD
STGE50NB60HD
STMicroelectronics
IGBT MOD 600V 100A 300W ISOTOP
FF600R12ME4B73BPSA1
FF600R12ME4B73BPSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW

Related Product By Brand

BAS4007WE6327BTSA1
BAS4007WE6327BTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT343
BAV 99 B6327
BAV 99 B6327
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BC846SH6327XTSA1
BC846SH6327XTSA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
IRFZ44NPBF
IRFZ44NPBF
Infineon Technologies
MOSFET N-CH 55V 49A TO220AB
IRLML5203TRPBF
IRLML5203TRPBF
Infineon Technologies
MOSFET P-CH 30V 3A MICRO3/SOT23
BSS138NL6433HTMA1
BSS138NL6433HTMA1
Infineon Technologies
MOSFET N-CH 60V 230MA SOT23-3
IRFP4468PBFXKMA1
IRFP4468PBFXKMA1
Infineon Technologies
TRENCH >=100V PG-TO247-3
FF600R12ME4PB72BPSA1
FF600R12ME4PB72BPSA1
Infineon Technologies
MEDIUM POWER ECONO
TLE62086G
TLE62086G
Infineon Technologies
BRUSH DC MOTOR CONTROLLER
BTS723GWNT
BTS723GWNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
AUIR3315STRL
AUIR3315STRL
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 D2PAK
TLE4267GMXUMA1
TLE4267GMXUMA1
Infineon Technologies
IC REG LINEAR 5V 400MA DSO14-30