FF600R12ME4BOSA1
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Infineon Technologies FF600R12ME4BOSA1

Manufacturer No:
FF600R12ME4BOSA1
Manufacturer:
Infineon Technologies
Package:
Tray
Description:
IGBT MODULE 1200V 4050W
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FF600R12ME4BOSA1 is an advanced IGBT (Insulated Gate Bipolar Transistor) module produced by Infineon Technologies. This module is part of the EconoDUAL™3 series, which is designed to offer high power density and reliability in various industrial applications. The FF600R12ME4BOSA1 features Trench/Fieldstop IGBTs and emitter-controlled diodes, making it suitable for high-power converters, motor drives, servo drives, UPS systems, and wind turbines.

Key Specifications

Parameter Symbol Note or Test Condition Values Unit
Collector-Emitter Voltage VCES Tvj = 25 °C 1200 V
Continuous DC Collector Current ICDC Tvj max = 175 °C, TC = 100 °C 600 A
Repetitive Peak Collector Current ICRM tp limited by Tvj op 1200 A
Gate-Emitter Peak Voltage VGES ±20 V
Collector-Emitter Saturation Voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 25 °C 1.75 - 2.10 V
Operating Junction Temperature Tvj op -40 °C to 150 °C °C
Weight 345 g

Key Features

  • High Power Density: The module offers high power density, making it ideal for applications where space is limited.
  • Isolated Base Plate: The module features an isolated base plate, enhancing electrical isolation and safety.
  • Low VCE,sat: The FF600R12ME4BOSA1 has a low collector-emitter saturation voltage, which reduces energy losses and improves efficiency.
  • Positive Temperature Coefficient of VCE,sat: This feature helps in ensuring stable operation over a wide temperature range.
  • Compliance with Industrial Standards: Qualified for industrial applications according to IEC 60747, 60749, and 60068 tests.

Applications

  • High-Power Converters: Suitable for high-power conversion applications due to its high current and voltage ratings.
  • Motor Drives: Ideal for motor drive systems requiring high power and efficiency.
  • Servo Drives: Used in servo drive applications where precise control and high power are necessary.
  • UPS Systems: Applicable in uninterruptible power supply systems for reliable power backup.
  • Wind Turbines: Employed in wind turbine systems for efficient power conversion.

Q & A

  1. What is the maximum collector-emitter voltage of the FF600R12ME4BOSA1?

    The maximum collector-emitter voltage is 1200 V.

  2. What is the continuous DC collector current rating of the module?

    The continuous DC collector current is 600 A at a maximum junction temperature of 175 °C.

  3. What is the operating junction temperature range of the FF600R12ME4BOSA1?

    The operating junction temperature range is -40 °C to 150 °C.

  4. What are the key features of the FF600R12ME4BOSA1 module?

    The key features include high power density, isolated base plate, low VCE,sat, and positive temperature coefficient of VCE,sat.

  5. What are the typical applications of the FF600R12ME4BOSA1 module?

    Typical applications include high-power converters, motor drives, servo drives, UPS systems, and wind turbines.

  6. Is the FF600R12ME4BOSA1 module compliant with industrial standards?

    Yes, it is qualified for industrial applications according to IEC 60747, 60749, and 60068 tests.

  7. What is the weight of the FF600R12ME4BOSA1 module?

    The weight of the module is 345 grams.

  8. What is the gate-emitter peak voltage rating of the module?

    The gate-emitter peak voltage rating is ±20 V.

  9. What is the collector-emitter saturation voltage (VCE,sat) of the FF600R12ME4BOSA1 at 25 °C?

    The VCE,sat at 25 °C is between 1.75 V and 2.10 V.

  10. Does the FF600R12ME4BOSA1 module have any specific mounting requirements?

    Yes, it requires mounting according to valid application notes with specified torque values.

Product Attributes

IGBT Type:Trench Field Stop
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):- 
Power - Max:4050 W
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 600A
Current - Collector Cutoff (Max):3 mA
Input Capacitance (Cies) @ Vce:37 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:Module
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$369.90
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Similar Products

Part Number FF600R12ME4BOSA1 FF600R12ME4CBOSA1 FF600R17ME4BOSA1 FF600R12ME4PBOSA1 FF300R12ME4BOSA1 FF600R12IE4BOSA1 FF600R12KE4BOSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Active Not For New Designs Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop - Trench Field Stop Trench Field Stop Trench Field Stop
Configuration 2 Independent Half Bridge 2 Independent - 2 Independent Half Bridge Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V 1700 V - 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) - 1060 A - - 450 A 600 A 600 A
Power - Max 4050 W 4050 W - - 1600 W 3350 W -
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A 2.1V @ 15V, 600A 2.3V @ 15V, 600A - 2.1V @ 15V, 300A 2.05V @ 15V, 600A 2.2V @ 15V, 600A
Current - Collector Cutoff (Max) 3 mA 3 mA 1 mA - 3 mA 5 mA 5 mA
Input Capacitance (Cies) @ Vce 37 nF @ 25 V 37 nF @ 25 V 48 nF @ 25 V - 18.5 nF @ 25 V 37 nF @ 25 V 38 nF @ 25 V
Input Standard Standard Standard - Standard Standard Standard
NTC Thermistor Yes Yes Yes - Yes Yes No
Operating Temperature -40°C ~ 150°C -40°C ~ 150°C (TJ) -40°C ~ 150°C - -40°C ~ 150°C -40°C ~ 150°C (TJ) -40°C ~ 150°C
Mounting Type Chassis Mount Chassis Mount Chassis Mount - Chassis Mount Chassis Mount Chassis Mount
Package / Case Module Module Module - Module Module Module
Supplier Device Package Module Module Module - Module Module Module

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