FF600R12ME4AB11BPSA1
  • Share:

Infineon Technologies FF600R12ME4AB11BPSA1

Manufacturer No:
FF600R12ME4AB11BPSA1
Manufacturer:
Infineon Technologies
Package:
Tray
Description:
MEDIUM POWER ECONO AG-ECONOD-411
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FF600R12ME4AB11BPSA1 is a dual IGBT module produced by Infineon Technologies, designed for high-power industrial applications. This module is part of the EconoDUAL™ 3 series, featuring TRENCHSTOP™ IGBT4 technology and an emitter-controlled diode. It is optimized for applications requiring high power density and reliability. The module includes additional features such as NTC (Negative Temperature Coefficient) thermistors and PressFIT contact technology, ensuring easy and reliable assembly without the need for plugs and cables.

Key Specifications

Parameter Symbol Note or Test Condition Values Unit
Collector-emitter voltage VCES Tvj = 25 °C 1200 V
Continuous DC collector current ICDC Tvj max = 175 °C, TC = 100 °C 600 A
Repetitive peak collector current ICRM tp limited by Tvj op 1200 A
Gate-emitter peak voltage VGES ±20 V
Collector-emitter saturation voltage VCE sat IC = 600 A, VGE = 15 V, Tvj = 25 °C 1.75 - 2.10 V
Gate threshold voltage VGEth V
Operating junction temperature Tvj op -40 to 150 °C
Weight 345 g

Key Features

  • Low VCE sat: The module features low collector-emitter saturation voltage, which enhances efficiency and reduces power losses.
  • High power density: Designed to provide high power density, making it suitable for compact system designs.
  • Isolated base plate: Ensures electrical isolation, which is crucial for safety and reliability in high-power applications.
  • Standard housing: Uses the EconoDUAL™ 3 housing, which is a standard and widely adopted format.
  • No plugs and cables required: The PressFIT contact technology simplifies assembly and reduces the risk of connection errors.
  • Ideal for low inductive system designs: Optimized for applications where low inductance is critical.
  • TRENCHSTOP™ IGBT4 technology: Offers advanced performance with a positive temperature coefficient for VCE sat.

Applications

  • High-power converters: Suitable for high-power conversion applications due to its high current and voltage ratings.
  • Motor drives: Ideal for motor drive systems that require high power density and reliability.
  • Servo drives: Used in servo drive applications where precise control and high power are necessary.
  • UPS systems: Can be used in uninterruptible power supply systems to ensure reliable power delivery.
  • Wind turbines: Suitable for wind turbine applications due to its high power handling and reliability.

Q & A

  1. What is the maximum collector-emitter voltage of the FF600R12ME4AB11BPSA1 module?

    The maximum collector-emitter voltage is 1200 V.

  2. What is the continuous DC collector current rating of this module?

    The continuous DC collector current rating is 600 A at a maximum junction temperature of 175 °C.

  3. What is the operating junction temperature range of the FF600R12ME4AB11BPSA1?

    The operating junction temperature range is -40 to 150 °C.

  4. What technology is used in the FF600R12ME4AB11BPSA1 module?

    The module uses TRENCHSTOP™ IGBT4 technology.

  5. What are the benefits of using PressFIT contact technology in this module?

    PressFIT contact technology simplifies assembly, eliminates the need for plugs and cables, and reduces the risk of connection errors.

  6. What are some potential applications of the FF600R12ME4AB11BPSA1 module?

    Potential applications include high-power converters, motor drives, servo drives, UPS systems, and wind turbines.

  7. What is the weight of the FF600R12ME4AB11BPSA1 module?

    The weight of the module is 345 grams.

  8. Does the module have an isolated base plate?

    Yes, the module has an isolated base plate, which ensures electrical isolation.

  9. What is the significance of the EconoDUAL™ 3 housing used in this module?

    The EconoDUAL™ 3 housing is a standard format that provides high power density and is widely adopted in industrial applications.

  10. Are there any specific driver modules recommended for the FF600R12ME4AB11BPSA1?

    Yes, the 2SP0115T2A0-FF600R12ME4 from Power Integrations is a recommended driver module for this IGBT module.

Product Attributes

IGBT Type:Trench Field Stop
Configuration:2 Independent
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):950 A
Power - Max:3350 W
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 600A
Current - Collector Cutoff (Max):3 mA
Input Capacitance (Cies) @ Vce:37 nF @ 25 V
Input:Standard
NTC Thermistor:Yes
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:Module
Supplier Device Package:AG-ECONOD
0 Remaining View Similar

In Stock

$443.54
3

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE20/AA
RD15S10HE20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E2S/AA
DD15S200E2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
RD50S1S50V50
RD50S1S50V50
CONN D-SUB RCPT 50POS CRIMP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
CBC17W2S10HT2S/AA
CBC17W2S10HT2S/AA
CONN D-SUB RCPT 17POS CRIMP

Related Product By Categories

FS820R08A6P2LBBPSA1
FS820R08A6P2LBBPSA1
Infineon Technologies
IGBT MODULE 820A HYBRID PK DRIVE
FF600R12ME4AB11BOSA1
FF600R12ME4AB11BOSA1
Infineon Technologies
IGBT MODULE 1200V 3350W
STGE200NB60S
STGE200NB60S
STMicroelectronics
IGBT MOD 600V 200A 600W ISOTOP
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
FF600R12ME4WB73BPSA1
FF600R12ME4WB73BPSA1
Infineon Technologies
MEDIUM POWER ECONO
FF600R12ME4EB11BPSA1
FF600R12ME4EB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO
FF600R12ME4CPB11BPSA1
FF600R12ME4CPB11BPSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
FF600R12ME4AB11BPSA1
FF600R12ME4AB11BPSA1
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-411
FF600R12ME4B11BPSA1
FF600R12ME4B11BPSA1
Infineon Technologies
FF600R12 - IGBT MODULE
STGE50NB60HD
STGE50NB60HD
STMicroelectronics
IGBT MOD 600V 100A 300W ISOTOP
FF600R12ME4B73BPSA1
FF600R12ME4B73BPSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
A1C15S12M3-F
A1C15S12M3-F
STMicroelectronics
IGBT MOD 1200V 15A ACEPACK1

Related Product By Brand

BTS70302EPADAUGHBRDTOBO1
BTS70302EPADAUGHBRDTOBO1
Infineon Technologies
PROFET +2 12V BTS7030-2EPA DAUGH
BAV199E6433HTMA1
BAV199E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAV74E6327
BAV74E6327
Infineon Technologies
RECTIFIER DIODE
BAS21UE6359HTMA1
BAS21UE6359HTMA1
Infineon Technologies
DIODE GP 200V 125MA SC74
BAT54WE6327
BAT54WE6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BFG135AE6327XT
BFG135AE6327XT
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
BC846AE6433
BC846AE6433
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
BC 807-25 E6327
BC 807-25 E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23
IRFP260NPBF
IRFP260NPBF
Infineon Technologies
MOSFET N-CH 200V 50A TO247AC
BSS83PE6327
BSS83PE6327
Infineon Technologies
MOSFET P-CH 60V 330MA SOT23-3
TLE72593GEXUMA1
TLE72593GEXUMA1
Infineon Technologies
IC TRANSCEIVER 1/1 DSO-8
BTS716GBXUMA1
BTS716GBXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-20