Overview
The BSC030N08NS5ATMA1 is an N-channel MOSFET from Infineon Technologies AG, specifically designed for high-performance applications. This OptiMOS™ 5 power MOSFET is optimized for synchronous rectification, particularly in telecom and server power supplies. It also finds use in various industrial applications such as solar, low voltage drives, and adapters. The device is known for its high efficiency, reduced switching and conduction losses, and increased power density.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 80 | V |
| Drain-Source On-State Resistance (RDS(on)) | 3.0 | mΩ |
| Continuous Drain Current (ID) | 161 | A |
| Pulsed Drain Current (ID,pulse) | 644 | A |
| Avalanche Energy (EAS) | 250 | mJ |
| Gate-Source Threshold Voltage (VGS(th)) | 2.2 - 3.8 | V |
| Gate-Source Leakage Current (IGSS) | - 10 - 100 | nA |
| Output Capacitance (Qoss) | 73 | nC |
| Gate Charge (QG(0V..10V)) | 61 | nC |
Key Features
- Optimized for synchronous rectification and high switching frequency applications.
- Output capacitance reduction of up to 44% and RDS(on) reduction of up to 43% compared to previous generations.
- Superior thermal resistance and 100% avalanche tested.
- Pb-free lead plating and RoHS compliant; halogen-free according to IEC61249-2-21.
- Ideal for achieving highest system efficiency, reduced switching and conduction losses, and increased power density.
- Low voltage overshoot.
Applications
- Telecom and server power supplies.
- Solar applications.
- Low voltage drives.
- Adapters.
- Other industrial applications requiring high efficiency and low losses.
Q & A
- What is the BSC030N08NS5ATMA1 MOSFET optimized for? The BSC030N08NS5ATMA1 is optimized for synchronous rectification and high switching frequency applications.
- What are the key benefits of using the BSC030N08NS5ATMA1? The key benefits include highest system efficiency, reduced switching and conduction losses, less paralleling required, increased power density, and low voltage overshoot.
- What is the maximum drain-source voltage (VDS) of the BSC030N08NS5ATMA1? The maximum drain-source voltage (VDS) is 80 V.
- What is the continuous drain current (ID) of the BSC030N08NS5ATMA1? The continuous drain current (ID) is 161 A.
- Is the BSC030N08NS5ATMA1 RoHS compliant? Yes, the BSC030N08NS5ATMA1 is Pb-free lead plating and RoHS compliant.
- What are the typical applications of the BSC030N08NS5ATMA1? Typical applications include telecom and server power supplies, solar applications, low voltage drives, and adapters.
- What is the gate-source threshold voltage (VGS(th)) of the BSC030N08NS5ATMA1? The gate-source threshold voltage (VGS(th)) ranges from 2.2 V to 3.8 V.
- How much output capacitance reduction does the BSC030N08NS5ATMA1 offer compared to previous generations? The BSC030N08NS5ATMA1 offers an output capacitance reduction of up to 44% compared to previous generations.
- Is the BSC030N08NS5ATMA1 suitable for automotive or aerospace applications? The BSC030N08NS5ATMA1 may be used in automotive, aviation, and aerospace applications only with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation, and aerospace device or system or to affect the safety or effectiveness of that device or system.
- What is the maximum pulsed drain current (ID,pulse) of the BSC030N08NS5ATMA1? The maximum pulsed drain current (ID,pulse) is 644 A.
