BSS138W E6433
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Infineon Technologies BSS138W E6433

Manufacturer No:
BSS138W E6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT323-3
Delivery:
Payment:
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Product Introduction

Overview

The BSS138W E6433 is an N-Channel Small Signal MOSFET produced by Infineon Technologies. This component is part of Infineon's broad portfolio of N and P-Channel Small Signal MOSFETs, designed to meet and exceed the highest quality requirements in industry-standard packages. The BSS138W is particularly suited for a wide variety of applications due to its reliability, compact package, and robust performance.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 60 V
Gate to Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) 0.28 A
Pulsed Drain Current (ID) 0.84 A
On-State Resistance (RDS(on)) at VGS = 10 V, ID = 0.22 A 3.5 Ω
On-State Resistance (RDS(on)) at VGS = 4.5 V, ID = 0.22 A 6.0 Ω
Maximum Power Dissipation (PD) 0.50 W
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Ambient (RθJA) 367 °C/W
Package SOT-323

Key Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating and RoHS compliant, halogen-free
  • Qualified according to automotive standards (AEC Q101)
  • PPAP capable
  • Low RDS(on) for higher efficiency and extended battery life
  • Compact SOT-323 package to save PCB space
  • Best-in-class quality and reliability

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch-Mode Power Supplies (SMPS)
  • Motor control
  • Small servo motor control
  • Power MOSFET gate drivers
  • Other low voltage, low current switching applications

Q & A

  1. What is the drain to source voltage rating of the BSS138W?

    The drain to source voltage (VDSS) is rated at 60 V.

  2. What is the maximum continuous drain current for the BSS138W?

    The maximum continuous drain current (ID) is 0.28 A.

  3. What is the on-state resistance (RDS(on)) at VGS = 10 V and ID = 0.22 A?

    The on-state resistance (RDS(on)) is 3.5 Ω at VGS = 10 V and ID = 0.22 A.

  4. Is the BSS138W Pb-free and RoHS compliant?
  5. What are the operating and storage temperature ranges for the BSS138W?

    The operating and storage junction temperature range is -55 to +150 °C.

  6. What is the thermal resistance, junction to ambient (RθJA), for the BSS138W?

    The thermal resistance, junction to ambient (RθJA), is 367 °C/W.

  7. In what package is the BSS138W available?

    The BSS138W is available in the SOT-323 package.

  8. What are some typical applications for the BSS138W?

    Typical applications include LED lighting, ADAS, body control units, SMPS, motor control, and small servo motor control.

  9. Is the BSS138W qualified according to automotive standards?
  10. What are the benefits of the low RDS(on) in the BSS138W?

    The low RDS(on) provides higher efficiency and extends battery life.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
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Same Series
BSS138WH6327XTSA1
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MOSFET N-CH 60V 280MA SOT323-3
BSS138WH6433XTMA1
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BSS138W E6433
BSS138W E6433
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BSS138W E6327
BSS138W E6327
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BSS138W L6433
BSS138W L6433
MOSFET N-CH 60V 280MA SOT323-3

Similar Products

Part Number BSS138W E6433 BSS138W L6433 BSS138N E6433
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 280mA (Ta) 280mA (Ta) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.5 nC @ 10 V 1.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 25 V 43 pF @ 25 V 41 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT323 PG-SOT323 PG-SOT23
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

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