BSS138W E6433
  • Share:

Infineon Technologies BSS138W E6433

Manufacturer No:
BSS138W E6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W E6433 is an N-Channel Small Signal MOSFET produced by Infineon Technologies. This component is part of Infineon's broad portfolio of N and P-Channel Small Signal MOSFETs, designed to meet and exceed the highest quality requirements in industry-standard packages. The BSS138W is particularly suited for a wide variety of applications due to its reliability, compact package, and robust performance.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 60 V
Gate to Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) 0.28 A
Pulsed Drain Current (ID) 0.84 A
On-State Resistance (RDS(on)) at VGS = 10 V, ID = 0.22 A 3.5 Ω
On-State Resistance (RDS(on)) at VGS = 4.5 V, ID = 0.22 A 6.0 Ω
Maximum Power Dissipation (PD) 0.50 W
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Ambient (RθJA) 367 °C/W
Package SOT-323

Key Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating and RoHS compliant, halogen-free
  • Qualified according to automotive standards (AEC Q101)
  • PPAP capable
  • Low RDS(on) for higher efficiency and extended battery life
  • Compact SOT-323 package to save PCB space
  • Best-in-class quality and reliability

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch-Mode Power Supplies (SMPS)
  • Motor control
  • Small servo motor control
  • Power MOSFET gate drivers
  • Other low voltage, low current switching applications

Q & A

  1. What is the drain to source voltage rating of the BSS138W?

    The drain to source voltage (VDSS) is rated at 60 V.

  2. What is the maximum continuous drain current for the BSS138W?

    The maximum continuous drain current (ID) is 0.28 A.

  3. What is the on-state resistance (RDS(on)) at VGS = 10 V and ID = 0.22 A?

    The on-state resistance (RDS(on)) is 3.5 Ω at VGS = 10 V and ID = 0.22 A.

  4. Is the BSS138W Pb-free and RoHS compliant?
  5. What are the operating and storage temperature ranges for the BSS138W?

    The operating and storage junction temperature range is -55 to +150 °C.

  6. What is the thermal resistance, junction to ambient (RθJA), for the BSS138W?

    The thermal resistance, junction to ambient (RθJA), is 367 °C/W.

  7. In what package is the BSS138W available?

    The BSS138W is available in the SOT-323 package.

  8. What are some typical applications for the BSS138W?

    Typical applications include LED lighting, ADAS, body control units, SMPS, motor control, and small servo motor control.

  9. Is the BSS138W qualified according to automotive standards?
  10. What are the benefits of the low RDS(on) in the BSS138W?

    The low RDS(on) provides higher efficiency and extends battery life.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

-
360

Please send RFQ , we will respond immediately.

Same Series
BSS138WH6433XTMA1
BSS138WH6433XTMA1
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6433
BSS138W E6433
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6327
BSS138W E6327
MOSFET N-CH 60V 280MA SOT323-3
BSS138W L6327
BSS138W L6327
MOSFET N-CH 60V 280MA SOT323-3
BSS138W L6433
BSS138W L6433
MOSFET N-CH 60V 280MA SOT323-3

Similar Products

Part Number BSS138W E6433 BSS138W L6433 BSS138N E6433
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 280mA (Ta) 280mA (Ta) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.5 nC @ 10 V 1.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 25 V 43 pF @ 25 V 41 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT323 PG-SOT323 PG-SOT23
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STW15NB50
STW15NB50
STMicroelectronics
MOSFET N-CH 500V 14.6A TO247-3
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

BTS70302EPADAUGHBRDTOBO1
BTS70302EPADAUGHBRDTOBO1
Infineon Technologies
PROFET +2 12V BTS7030-2EPA DAUGH
BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAV70WH6327XTSA1
BAV70WH6327XTSA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BC857SH6327
BC857SH6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC847PNH6727XTSA1
BC847PNH6727XTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BFS17WH6327XTSA1
BFS17WH6327XTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3
IRF540NPBF
IRF540NPBF
Infineon Technologies
MOSFET N-CH 100V 33A TO220AB
SPP20N60C3XKSA1
SPP20N60C3XKSA1
Infineon Technologies
MOSFET N-CH 600V 20.7A TO220-3
BSS84PWH6327XTSA1
BSS84PWH6327XTSA1
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
IRS2092STRPBF
IRS2092STRPBF
Infineon Technologies
IC AMP CLASS D MONO 16SOIC
BSP762TNT
BSP762TNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-8
TLE7368EXUMA5
TLE7368EXUMA5
Infineon Technologies
OPTIREG PMIC