BSS138W E6433
  • Share:

Infineon Technologies BSS138W E6433

Manufacturer No:
BSS138W E6433
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 280MA SOT323-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138W E6433 is an N-Channel Small Signal MOSFET produced by Infineon Technologies. This component is part of Infineon's broad portfolio of N and P-Channel Small Signal MOSFETs, designed to meet and exceed the highest quality requirements in industry-standard packages. The BSS138W is particularly suited for a wide variety of applications due to its reliability, compact package, and robust performance.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 60 V
Gate to Source Voltage (VGSS) ±20 V
Continuous Drain Current (ID) 0.28 A
Pulsed Drain Current (ID) 0.84 A
On-State Resistance (RDS(on)) at VGS = 10 V, ID = 0.22 A 3.5 Ω
On-State Resistance (RDS(on)) at VGS = 4.5 V, ID = 0.22 A 6.0 Ω
Maximum Power Dissipation (PD) 0.50 W
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Ambient (RθJA) 367 °C/W
Package SOT-323

Key Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating and RoHS compliant, halogen-free
  • Qualified according to automotive standards (AEC Q101)
  • PPAP capable
  • Low RDS(on) for higher efficiency and extended battery life
  • Compact SOT-323 package to save PCB space
  • Best-in-class quality and reliability

Applications

  • LED lighting
  • Advanced Driver Assistance Systems (ADAS)
  • Body control units
  • Switch-Mode Power Supplies (SMPS)
  • Motor control
  • Small servo motor control
  • Power MOSFET gate drivers
  • Other low voltage, low current switching applications

Q & A

  1. What is the drain to source voltage rating of the BSS138W?

    The drain to source voltage (VDSS) is rated at 60 V.

  2. What is the maximum continuous drain current for the BSS138W?

    The maximum continuous drain current (ID) is 0.28 A.

  3. What is the on-state resistance (RDS(on)) at VGS = 10 V and ID = 0.22 A?

    The on-state resistance (RDS(on)) is 3.5 Ω at VGS = 10 V and ID = 0.22 A.

  4. Is the BSS138W Pb-free and RoHS compliant?
  5. What are the operating and storage temperature ranges for the BSS138W?

    The operating and storage junction temperature range is -55 to +150 °C.

  6. What is the thermal resistance, junction to ambient (RθJA), for the BSS138W?

    The thermal resistance, junction to ambient (RθJA), is 367 °C/W.

  7. In what package is the BSS138W available?

    The BSS138W is available in the SOT-323 package.

  8. What are some typical applications for the BSS138W?

    Typical applications include LED lighting, ADAS, body control units, SMPS, motor control, and small servo motor control.

  9. Is the BSS138W qualified according to automotive standards?
  10. What are the benefits of the low RDS(on) in the BSS138W?

    The low RDS(on) provides higher efficiency and extends battery life.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.5Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id:1.4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT323
Package / Case:SC-70, SOT-323
0 Remaining View Similar

In Stock

-
360

Please send RFQ , we will respond immediately.

Same Series
BSS138WH6327XTSA1
BSS138WH6327XTSA1
MOSFET N-CH 60V 280MA SOT323-3
BSS138WH6433XTMA1
BSS138WH6433XTMA1
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6433
BSS138W E6433
MOSFET N-CH 60V 280MA SOT323-3
BSS138W E6327
BSS138W E6327
MOSFET N-CH 60V 280MA SOT323-3
BSS138W L6433
BSS138W L6433
MOSFET N-CH 60V 280MA SOT323-3

Similar Products

Part Number BSS138W E6433 BSS138W L6433 BSS138N E6433
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 280mA (Ta) 280mA (Ta) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5Ohm @ 220mA, 10V 3.5Ohm @ 220mA, 10V 3.5Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id 1.4V @ 26µA 1.4V @ 26µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 10 V 1.5 nC @ 10 V 1.4 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 43 pF @ 25 V 43 pF @ 25 V 41 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT323 PG-SOT323 PG-SOT23
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

AO3407A
AO3407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 4.3A SOT23-3L
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
BUK762R6-60E,118
BUK762R6-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 120A D2PAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAV199E6433HTMA1
BAV199E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT23
BAS70-04B5000
BAS70-04B5000
Infineon Technologies
SCHOTTKY DIODE
BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BAS2103WE6327HTSA1
BAS2103WE6327HTSA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOD323
BC856UE6327HTSA1
BC856UE6327HTSA1
Infineon Technologies
TRANS 2PNP 65V 0.1A SC74-6
BC846SE6433BTMA1
BC846SE6433BTMA1
Infineon Technologies
TRANS 2NPN 65V 0.1A SOT363
BC847SH6827XTSA1
BC847SH6827XTSA1
Infineon Technologies
TRANS 2NPN 45V 0.1A SOT363
BC846AE6433
BC846AE6433
Infineon Technologies
TRANS NPN 45V 0.1A SOT23
FF600R12ME4B72BOSA1
FF600R12ME4B72BOSA1
Infineon Technologies
IGBT MOD 1200V 1200A 20MW
IRS44273LTRPBF
IRS44273LTRPBF
Infineon Technologies
IC GATE DRVR LOW-SIDE SOT23-5
BTS6143DAUMA1
BTS6143DAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
BSP75NNT
BSP75NNT
Infineon Technologies
IC PWR DRVR N-CHAN 1:1 SOT223-4