Overview
The IKW75N65ES5XKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. This device is part of the TRENCHSTOP™ 5 S5 series and is housed in a TO247 package. It is designed to address applications that require switching frequencies between 10 kHz and 40 kHz, offering high efficiency, reduced circuit design complexity, and optimized PCB bill of material costs.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (VCE) | 650 V |
| Collector Current (IC) | 80 A |
| Collector-Emitter Saturation Voltage (VCEsat) | 1.35 V at 25°C |
| Maximum Junction Temperature (Tj) | 175°C |
| Package Type | TO247-3 |
| Pulse Current (Icpulse) | 4 times at 100°C Tc |
| Power Dissipation (PD) | 395 W |
Key Features
- Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5.
- Four times the pulse current (Icpulse) at 100°C Tc.
- Soft current fall characteristics with no tail current.
- Symmetrical, low voltage overshoot.
- Gate voltage under control (no oscillation), eliminating the risk of unwanted turn-on and the need for gate clamping.
- Qualified according to JEDEC standards.
- No need for VCEpeak clamping circuits or gate clamping components.
- Good EMI behavior and excellent for paralleling.
Applications
The IKW75N65ES5XKSA1 is suitable for various high-power applications that require efficient switching, such as:
- Industrial power supplies
- Motor drives
- Renewable energy systems
- Power factor correction (PFC) circuits
- High-frequency switching applications between 10 kHz and 40 kHz.
Q & A
- What is the voltage rating of the IKW75N65ES5XKSA1 IGBT?
The voltage rating of the IKW75N65ES5XKSA1 IGBT is 650 V.
- What is the maximum collector current of the IKW75N65ES5XKSA1?
The maximum collector current is 80 A.
- What is the collector-emitter saturation voltage (VCEsat) of this IGBT?
The VCEsat is 1.35 V at 25°C.
- What is the maximum junction temperature for this device?
The maximum junction temperature is 175°C).
- What package type is the IKW75N65ES5XKSA1 available in?
The device is housed in a TO247-3 package).
- Does this IGBT require VCEpeak clamping circuits or gate clamping components?
No, it does not require VCEpeak clamping circuits or gate clamping components).
- What are the benefits of the soft current fall characteristics of this IGBT?
The soft current fall characteristics eliminate tail current, ensuring smoother operation and reduced EMI).
- Is the IKW75N65ES5XKSA1 suitable for high-frequency switching applications?
Yes, it is suitable for high-frequency switching applications between 10 kHz and 40 kHz).
- What standards is the IKW75N65ES5XKSA1 qualified to?
The device is qualified according to JEDEC standards).
- What are some potential applications for the IKW75N65ES5XKSA1 IGBT?
Potential applications include industrial power supplies, motor drives, renewable energy systems, and power factor correction (PFC) circuits).
