STGP19NC60KD
  • Share:

STMicroelectronics STGP19NC60KD

Manufacturer No:
STGP19NC60KD
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 600V 35A 125W TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGP19NC60KD is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. This device is developed using the advanced PowerMESH™ technology, which ensures an excellent trade-off between switching performance and conduction losses. The STGP19NC60KD is designed to operate at high frequencies and is particularly suited for applications requiring low on-voltage drop and minimal power losses.

Key Specifications

ParameterValue
Maximum Collector-Emitter Voltage (|Vce|)600 V
Maximum Gate-Emitter Voltage (|Vge|)20 V
Maximum Collector Current (|Ic|) @ 25°C35 A
Collector-Emitter Saturation Voltage (VCEsat) @ 25°C2 V
Gate-Emitter Threshold Voltage (VGEth)6.5 V
Maximum Junction Temperature (Tj)150 °C
Rise Time (tr)8 ns
Output Capacitance (Coes)127 pF
Total Gate Charge (Qg)55 nC
Maximum Power Dissipation (Pc)125 W
PackageTO-220

Key Features

  • Low on-voltage drop (VCE(sat))
  • Low Cres / Cies ratio, reducing cross-conduction susceptibility
  • Short circuit withstand time of 10 μs
  • Co-packaged with an ultrafast free-wheeling diode
  • Advanced PowerMESH™ technology for improved switching performance and reduced conduction losses

Applications

  • High frequency inverters
  • Motor drivers and motor controls
  • Switch Mode Power Supplies (SMPS) and Power Factor Correction (PFC) in both hard switching and resonant topologies
  • Medium frequency motor drives

Q & A

  1. What is the maximum collector-emitter voltage of the STGP19NC60KD?
    The maximum collector-emitter voltage is 600 V.
  2. What is the maximum collector current at 25°C?
    The maximum collector current at 25°C is 35 A.
  3. What is the typical collector-emitter saturation voltage?
    The typical collector-emitter saturation voltage is 2 V at 25°C.
  4. What is the maximum gate-emitter voltage?
    The maximum gate-emitter voltage is 20 V.
  5. What is the rise time of the STGP19NC60KD?
    The rise time is typically 8 ns.
  6. What is the output capacitance of the STGP19NC60KD?
    The output capacitance is typically 127 pF.
  7. What is the total gate charge of the STGP19NC60KD?
    The total gate charge is typically 55 nC.
  8. What is the maximum junction temperature of the STGP19NC60KD?
    The maximum junction temperature is 150 °C.
  9. In what package is the STGP19NC60KD available?
    The STGP19NC60KD is available in a TO-220 package.
  10. What are some common applications of the STGP19NC60KD?
    Common applications include high frequency inverters, motor drivers, SMPS, and PFC in both hard switching and resonant topologies.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):35 A
Current - Collector Pulsed (Icm):75 A
Vce(on) (Max) @ Vge, Ic:2.75V @ 15V, 12A
Power - Max:125 W
Switching Energy:165µJ (on), 255µJ (off)
Input Type:Standard
Gate Charge:55 nC
Td (on/off) @ 25°C:30ns/105ns
Test Condition:480V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr):31 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

$2.70
192

Please send RFQ , we will respond immediately.

Same Series
STGP19NC60KD
STGP19NC60KD
IGBT 600V 35A 125W TO220
STGF19NC60KD
STGF19NC60KD
IGBT 600V 16A 32W TO220FP

Similar Products

Part Number STGP19NC60KD STGP19NC60SD STGP19NC60WD STGF19NC60KD STGP10NC60KD STGP14NC60KD STGP19NC60HD
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Active Active Active
IGBT Type - - - - - - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 35 A 40 A 40 A 16 A 20 A 25 A 40 A
Current - Collector Pulsed (Icm) 75 A 80 A - 75 A 30 A 50 A 60 A
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 12A 1.9V @ 15V, 12A 2.5V @ 15V, 12A 2.75V @ 15V, 12A 2.5V @ 15V, 5A 2.5V @ 15V, 7A 2.5V @ 15V, 12A
Power - Max 125 W 130 W 125 W 32 W 65 W 80 W 130 W
Switching Energy 165µJ (on), 255µJ (off) 135µJ (on), 815µJ (off) 81µJ (on), 125µJ (off) 165µJ (on), 255µJ (off) 55µJ (on), 85µJ (off) 82µJ (on), 155µJ (off) 85µJ (on), 189µJ (off)
Input Type Standard Standard Standard Standard Standard Standard Standard
Gate Charge 55 nC 54.5 nC 53 nC 55 nC 19 nC 34.4 nC 53 nC
Td (on/off) @ 25°C 30ns/105ns 17.5ns/175ns 25ns/90ns 30ns/105ns 17ns/72ns 22.5ns/116ns 25ns/97ns
Test Condition 480V, 12A, 10Ohm, 15V 480V, 12A, 10Ohm, 15V 390V, 12A, 10Ohm, 15V 480V, 12A, 10Ohm, 15V 390V, 5A, 10Ohm, 15V 390V, 7A, 10Ohm, 15V 390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr) 31 ns 31 ns 31 ns 31 ns 22 ns 37 ns 31 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 Full Pack TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220FP TO-220 TO-220 TO-220

Related Product By Categories

IKW75N65EH5XKSA1
IKW75N65EH5XKSA1
Infineon Technologies
IGBT TRENCH 650V 90A TO247-3
STGD10HF60KD
STGD10HF60KD
STMicroelectronics
IGBT 600V 10A DPAK
FGD5T120SH
FGD5T120SH
onsemi
IGBT 1200V 5A FS3 DPAK
IKW40N120H3FKSA1
IKW40N120H3FKSA1
Infineon Technologies
IGBT 1200V 80A 483W TO247-3
NGTB40N120FL3WG
NGTB40N120FL3WG
onsemi
IGBT 1200V 160A TO247
NGTB50N120FL2WG
NGTB50N120FL2WG
onsemi
IGBT 1200V 100A 535W TO247
STGF19NC60KD
STGF19NC60KD
STMicroelectronics
IGBT 600V 16A 32W TO220FP
NGD8201ANT4G
NGD8201ANT4G
Littelfuse Inc.
IGBT 440V 20A 125W DPAK
NGTB25N120FLWG
NGTB25N120FLWG
onsemi
IGBT 1200V 25A TO247-3
STGFW40V60DF
STGFW40V60DF
STMicroelectronics
IGBT 600V 80A 62.5W TO-3PF
FGH75T65SQDT_F155
FGH75T65SQDT_F155
onsemi
650V FS4 TRENCH IGBT
FGA50T65SHD-01
FGA50T65SHD-01
onsemi
FGA50T65SHD-01

Related Product By Brand

STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STGW80H65DFB-4
STGW80H65DFB-4
STMicroelectronics
IGBT BIPO 650V 80A TO247
STM32L151VCH6
STM32L151VCH6
STMicroelectronics
IC MCU 32BIT 256KB FLSH 100UFBGA
STM32L052R8H6
STM32L052R8H6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 64TFBGA
E-TDA7560A
E-TDA7560A
STMicroelectronics
IC AMP AB QUAD 80W 27FLEXIWATT
TDA7360HS
TDA7360HS
STMicroelectronics
IC AMP AB MONO/STER 11MULTIWATT
M27C160-100F1
M27C160-100F1
STMicroelectronics
IC EPROM 16MBIT PARALLEL 42CDIP
LD39015M33R
LD39015M33R
STMicroelectronics
IC REG LINEAR 3.3V 150MA SOT23-5
LD39100PU33R
LD39100PU33R
STMicroelectronics
IC REG LINEAR 3.3V 1A 6DFN
LD1085V18
LD1085V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP