STGP19NC60KD
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STMicroelectronics STGP19NC60KD

Manufacturer No:
STGP19NC60KD
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 600V 35A 125W TO220
Delivery:
Payment:
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Product Introduction

Overview

The STGP19NC60KD is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. This device is developed using the advanced PowerMESH™ technology, which ensures an excellent trade-off between switching performance and conduction losses. The STGP19NC60KD is designed to operate at high frequencies and is particularly suited for applications requiring low on-voltage drop and minimal power losses.

Key Specifications

ParameterValue
Maximum Collector-Emitter Voltage (|Vce|)600 V
Maximum Gate-Emitter Voltage (|Vge|)20 V
Maximum Collector Current (|Ic|) @ 25°C35 A
Collector-Emitter Saturation Voltage (VCEsat) @ 25°C2 V
Gate-Emitter Threshold Voltage (VGEth)6.5 V
Maximum Junction Temperature (Tj)150 °C
Rise Time (tr)8 ns
Output Capacitance (Coes)127 pF
Total Gate Charge (Qg)55 nC
Maximum Power Dissipation (Pc)125 W
PackageTO-220

Key Features

  • Low on-voltage drop (VCE(sat))
  • Low Cres / Cies ratio, reducing cross-conduction susceptibility
  • Short circuit withstand time of 10 μs
  • Co-packaged with an ultrafast free-wheeling diode
  • Advanced PowerMESH™ technology for improved switching performance and reduced conduction losses

Applications

  • High frequency inverters
  • Motor drivers and motor controls
  • Switch Mode Power Supplies (SMPS) and Power Factor Correction (PFC) in both hard switching and resonant topologies
  • Medium frequency motor drives

Q & A

  1. What is the maximum collector-emitter voltage of the STGP19NC60KD?
    The maximum collector-emitter voltage is 600 V.
  2. What is the maximum collector current at 25°C?
    The maximum collector current at 25°C is 35 A.
  3. What is the typical collector-emitter saturation voltage?
    The typical collector-emitter saturation voltage is 2 V at 25°C.
  4. What is the maximum gate-emitter voltage?
    The maximum gate-emitter voltage is 20 V.
  5. What is the rise time of the STGP19NC60KD?
    The rise time is typically 8 ns.
  6. What is the output capacitance of the STGP19NC60KD?
    The output capacitance is typically 127 pF.
  7. What is the total gate charge of the STGP19NC60KD?
    The total gate charge is typically 55 nC.
  8. What is the maximum junction temperature of the STGP19NC60KD?
    The maximum junction temperature is 150 °C.
  9. In what package is the STGP19NC60KD available?
    The STGP19NC60KD is available in a TO-220 package.
  10. What are some common applications of the STGP19NC60KD?
    Common applications include high frequency inverters, motor drivers, SMPS, and PFC in both hard switching and resonant topologies.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):35 A
Current - Collector Pulsed (Icm):75 A
Vce(on) (Max) @ Vge, Ic:2.75V @ 15V, 12A
Power - Max:125 W
Switching Energy:165µJ (on), 255µJ (off)
Input Type:Standard
Gate Charge:55 nC
Td (on/off) @ 25°C:30ns/105ns
Test Condition:480V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr):31 ns
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
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Similar Products

Part Number STGP19NC60KD STGP19NC60SD STGP19NC60WD STGF19NC60KD STGP10NC60KD STGP14NC60KD STGP19NC60HD
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Active Active Active
IGBT Type - - - - - - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 35 A 40 A 40 A 16 A 20 A 25 A 40 A
Current - Collector Pulsed (Icm) 75 A 80 A - 75 A 30 A 50 A 60 A
Vce(on) (Max) @ Vge, Ic 2.75V @ 15V, 12A 1.9V @ 15V, 12A 2.5V @ 15V, 12A 2.75V @ 15V, 12A 2.5V @ 15V, 5A 2.5V @ 15V, 7A 2.5V @ 15V, 12A
Power - Max 125 W 130 W 125 W 32 W 65 W 80 W 130 W
Switching Energy 165µJ (on), 255µJ (off) 135µJ (on), 815µJ (off) 81µJ (on), 125µJ (off) 165µJ (on), 255µJ (off) 55µJ (on), 85µJ (off) 82µJ (on), 155µJ (off) 85µJ (on), 189µJ (off)
Input Type Standard Standard Standard Standard Standard Standard Standard
Gate Charge 55 nC 54.5 nC 53 nC 55 nC 19 nC 34.4 nC 53 nC
Td (on/off) @ 25°C 30ns/105ns 17.5ns/175ns 25ns/90ns 30ns/105ns 17ns/72ns 22.5ns/116ns 25ns/97ns
Test Condition 480V, 12A, 10Ohm, 15V 480V, 12A, 10Ohm, 15V 390V, 12A, 10Ohm, 15V 480V, 12A, 10Ohm, 15V 390V, 5A, 10Ohm, 15V 390V, 7A, 10Ohm, 15V 390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr) 31 ns 31 ns 31 ns 31 ns 22 ns 37 ns 31 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 Full Pack TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220FP TO-220 TO-220 TO-220

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