STGF10M65DF2
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STMicroelectronics STGF10M65DF2

Manufacturer No:
STGF10M65DF2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT TRENCH 650V 20A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STGF10M65DF2 is a Trench gate field-stop IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics. It is part of the M series IGBTs, known for their advanced proprietary trench gate field-stop structure. This device is designed to offer low-loss performance, making it suitable for high-efficiency applications. The STGF10M65DF2 is packaged in a TO-220FP package, which is a through-hole mounting type, facilitating easy integration into various power systems.

Key Specifications

ParameterValue
Voltage Rating (VCE)650 V
Current Rating (IC)10 A
Package TypeTO-220FP
Mounting TypeThrough Hole
Power Dissipation (PD)30 W
Switching FrequencyUp to 50 kHz (typical)

Key Features

  • Advanced proprietary trench gate field-stop structure for low-loss performance.
  • High voltage rating of 650 V and current rating of 10 A.
  • TO-220FP package for through-hole mounting.
  • High power dissipation capability of up to 30 W.
  • Suitable for high-frequency switching applications up to 50 kHz.

Applications

The STGF10M65DF2 IGBT is designed for use in various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power inverters.
  • Industrial automation and control systems.
  • High-efficiency power conversion systems.

Q & A

  1. What is the voltage rating of the STGF10M65DF2 IGBT? The voltage rating of the STGF10M65DF2 IGBT is 650 V.
  2. What is the current rating of the STGF10M65DF2 IGBT? The current rating of the STGF10M65DF2 IGBT is 10 A.
  3. What package type is the STGF10M65DF2 IGBT available in? The STGF10M65DF2 IGBT is available in the TO-220FP package.
  4. What is the mounting type of the STGF10M65DF2 IGBT? The STGF10M65DF2 IGBT is a through-hole mounting type.
  5. What is the power dissipation capability of the STGF10M65DF2 IGBT? The power dissipation capability of the STGF10M65DF2 IGBT is up to 30 W.
  6. What are the typical switching frequencies for the STGF10M65DF2 IGBT? The STGF10M65DF2 IGBT can operate at switching frequencies up to 50 kHz.
  7. What are some common applications for the STGF10M65DF2 IGBT? Common applications include power supplies, motor drives, renewable energy systems, industrial automation, and high-efficiency power conversion systems.
  8. What is the advantage of the trench gate field-stop structure in the STGF10M65DF2 IGBT? The trench gate field-stop structure provides low-loss performance, enhancing the overall efficiency of the device.
  9. Where can I find detailed specifications for the STGF10M65DF2 IGBT? Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other authorized distributors like Digi-Key.
  10. Is the STGF10M65DF2 IGBT suitable for high-frequency applications? Yes, the STGF10M65DF2 IGBT is suitable for high-frequency applications due to its ability to switch at frequencies up to 50 kHz.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 10A
Power - Max:30 W
Switching Energy:120µJ (on), 270µJ (off)
Input Type:Standard
Gate Charge:28 nC
Td (on/off) @ 25°C:19ns/91ns
Test Condition:400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr):96 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220FP
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Similar Products

Part Number STGF10M65DF2 STGF15M65DF2 STGF20M65DF2 STGF30M65DF2 STGP10M65DF2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V 650 V 650 V
Current - Collector (Ic) (Max) 20 A 30 A 40 A 60 A 20 A
Current - Collector Pulsed (Icm) 40 A 60 A 80 A 120 A 40 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 10A 2V @ 15V, 15A 2V @ 15V, 20A 2V @ 15V, 30A 2V @ 15V, 10A
Power - Max 30 W 31 W 32.6 W 38 W 115 W
Switching Energy 120µJ (on), 270µJ (off) 90µJ (on), 450µJ (off) 140µJ (on), 560µJ (off) 300µJ (on), 960µJ (off) 120µJ (on), 270µJ (off)
Input Type Standard Standard Standard Standard Standard
Gate Charge 28 nC 45 nC 63 nC 80 nC 28 nC
Td (on/off) @ 25°C 19ns/91ns 24ns/93ns 26ns/108ns 31.6ns/115ns 19ns/91ns
Test Condition 400V, 10A, 22Ohm, 15V 400V, 15A, 12Ohm, 15V 400V, 20A, 12Ohm, 15V 400V, 30A, 10Ohm, 15V 400V, 10A, 22Ohm, 15V
Reverse Recovery Time (trr) 96 ns 142 ns 166 ns 140 ns 96 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220

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