Overview
The NGTB40N120FL2WG is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, featuring a robust and cost-effective Field Stop II Trench construction. This IGBT is designed to provide superior performance in demanding switching applications, offering low on-state voltage and minimal switching loss. It is well-suited for high-speed switching and is optimized for use in various power management systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCES | 1200 | V |
| Collector current @ TC = 25°C | IC | 80 | A |
| Collector current @ TC = 100°C | IC | 40 | A |
| Pulsed collector current | ICM | 200 | A |
| Gate-emitter voltage | VGE | ±20 | V |
| Transient gate-emitter voltage | VGE | ±30 | V |
| Power Dissipation @ TC = 25°C | PD | 535 | W |
| Power Dissipation @ TC = 100°C | PD | 267 | W |
| Short Circuit Withstand Time | TSC | 10 μs | |
| Operating junction temperature range | TJ | -55 to +175 | °C |
| Storage temperature range | Tstg | -55 to +175 | °C |
| Thermal resistance junction-to-case | RθJC | 0.28 | °C/W |
| Thermal resistance junction-to-ambient | RθJA | 40 | °C/W |
| Collector-emitter saturation voltage | VCEsat | 2.0 - 2.4 | V |
| Gate-emitter threshold voltage | VGE(th) | 4.5 - 6.5 | V |
Key Features
- Extremely efficient Trench with Field Stop Technology
- Maximum junction temperature (TJmax) of 175°C
- Optimized for high-speed switching
- 10 μs short circuit capability
- Pb-free device
- Low on-state voltage and minimal switching loss
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welding Equipment
Q & A
- What is the maximum collector-emitter voltage of the NGTB40N120FL2WG IGBT?
The maximum collector-emitter voltage is 1200 V.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 80 A at 25°C and 40 A at 100°C.
- What is the short circuit withstand time of this IGBT?
The short circuit withstand time is 10 μs.
- What is the operating junction temperature range of the NGTB40N120FL2WG?
The operating junction temperature range is -55°C to +175°C.
- What are the typical applications of this IGBT?
Typical applications include solar inverters, uninterruptible power supplies (UPS), and welding equipment.
- What is the thermal resistance junction-to-case of this IGBT?
The thermal resistance junction-to-case is 0.28 °C/W.
- Is the NGTB40N120FL2WG IGBT Pb-free?
Yes, the NGTB40N120FL2WG is a Pb-free device.
- What is the gate-emitter threshold voltage range of this IGBT?
The gate-emitter threshold voltage range is 4.5 V to 6.5 V.
- What is the collector-emitter saturation voltage range of this IGBT?
The collector-emitter saturation voltage range is 2.0 V to 2.4 V.
- What package type is the NGTB40N120FL2WG IGBT available in?
The NGTB40N120FL2WG IGBT is available in the TO-247 package.
