Overview
The FGH60T65SQD-F155 is a Field Stop, Trench IGBT (Insulated Gate Bipolar Transistor) produced by onsemi. This device is part of onsemi’s 4th generation IGBT series, designed to offer optimal performance in applications requiring low conduction and switching losses. It is particularly suited for use in solar inverters, UPS (Uninterruptible Power Supplies), welders, telecom systems, Energy Storage Systems (ESS), and Power Factor Correction (PFC) applications.
Key Specifications
| Parameter | Unit | Min | Max | |
|---|---|---|---|---|
| Collector to Emitter Voltage (VCES) | V | - | - | 650 |
| Gate to Emitter Voltage (VGES) | V | - | - | ±20 |
| Collector Current (IC) @ TC < 25°C | A | - | - | 120 |
| Collector Current (IC) @ TC < 100°C | A | - | - | 60 |
| Pulsed Collector Current (ILM) @ TC < 25°C | A | - | - | 240 |
| Maximum Junction Temperature (TJ) | °C | -55 | - | 175 |
| Thermal Resistance, Junction to Case (RθJC) for IGBT | °C/W | - | - | 0.45 |
| Turn-On Delay Time (td(on)) @ VCC = 400 V, IC = 15 A, VGE = 15 V | ns | - | 20.8 | - |
| Turn-Off Delay Time (td(off)) @ VCC = 400 V, IC = 15 A, VGE = 15 V | ns | - | 102 | - |
| Collector to Emitter Saturation Voltage (VCE(sat)) @ IC = 60 A, VGE = 15 V | V | - | 1.6 | 2.1 |
Key Features
- Max Junction Temperature of 175°C
- Positive Temperature Coefficient for easy parallel operation
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 60 A
- 100% of the parts tested for ILM (Insulated Gate Bipolar Transistor Latch-up Immunity)
- High Input Impedance
- Fast Switching
- Tight Parameter Distribution
- Pb-Free and RoHS Compliant
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Welders
- Telecom Systems
- Energy Storage Systems (ESS)
- Power Factor Correction (PFC)
Q & A
- What is the maximum collector to emitter voltage (VCES) of the FGH60T65SQD-F155?
The maximum collector to emitter voltage (VCES) is 650 V.
- What is the maximum collector current (IC) at 25°C and 100°C?
The maximum collector current (IC) is 120 A at 25°C and 60 A at 100°C.
- What is the thermal resistance from junction to case (RθJC) for the IGBT?
The thermal resistance from junction to case (RθJC) for the IGBT is 0.45 °C/W.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time (td(on)) is 20.8 ns, and the typical turn-off delay time (td(off)) is 102 ns.
- What is the collector to emitter saturation voltage (VCE(sat)) at IC = 60 A and VGE = 15 V?
The collector to emitter saturation voltage (VCE(sat)) is typically 1.6 V at IC = 60 A and VGE = 15 V.
- Is the device Pb-Free and RoHS Compliant?
- What are the typical applications for this IGBT?
The typical applications include solar inverters, UPS, welders, telecom systems, ESS, and PFC.
- What is the maximum junction temperature (TJ) for this device?
The maximum junction temperature (TJ) is 175°C.
- Does the device have a positive temperature coefficient for easy parallel operation?
- What is the input capacitance (Cies) at VCE = 30 V and VGE = 0 V?
The input capacitance (Cies) is typically 3813 pF at VCE = 30 V and VGE = 0 V.
