STGWA60H65DFB
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STMicroelectronics STGWA60H65DFB

Manufacturer No:
STGWA60H65DFB
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT BIPO 650V 60A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The STGWA60H65DFB is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the HB series, known for its high-speed switching capabilities and advanced proprietary trench gate field-stop structure. The STGWA60H65DFB is designed to meet the demands of high-power applications, offering low saturation voltage, minimized tail current, and tight parameter distribution for safer paralleling operations.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCE) 650 V
Continuous Collector Current at TC = 25 °C 60 A
Continuous Collector Current at TC = 100 °C 60 A
Pulsed Collector Current 240 A
Gate-Emitter Voltage (VGE) ±20 V
Collector-Emitter Saturation Voltage (VCE(sat)) 1.60 - 2.0 V
Maximum Junction Temperature (TJ) 175 °C
Total Power Dissipation at TC = 25 °C 375 W
Thermal Resistance Junction-Case (RthJC) 0.4 °C/W
Thermal Resistance Junction-Ambient (RthJA) 50 °C/W
Turn-on Delay Time (td(on)) 66 ns
Turn-off Delay Time (td(off)) 210 ns
Gate Charge (Qg) 306 nC

Key Features

  • High-Speed Switching: Part of the HB series, known for high-speed switching capabilities.
  • Advanced Trench Gate Field-Stop Structure: Enhances performance and reliability.
  • Low Saturation Voltage: VCE(sat) = 1.6 V (typ.), reducing power losses.
  • Minimized Tail Current: Improves switching efficiency.
  • Tight Parameter Distribution: Ensures safer paralleling operations.
  • High Power Handling: Maximum collector current of 60 A and total power dissipation of 375 W.
  • Wide Operating Temperature Range: Junction temperature range from -55 °C to 175 °C.
  • ECOPACK Compliant: Available in environmentally compliant packages.

Applications

  • Power Conversion Systems: Suitable for DC-DC converters, AC-DC converters, and DC-AC inverters.
  • Motor Control: Used in motor drives and servo drives due to its high-speed switching and low losses.
  • Renewable Energy Systems: Ideal for solar and wind power systems requiring high efficiency and reliability.
  • Industrial Power Supplies: Used in high-power industrial power supplies and UPS systems.
  • Automotive Systems: Suitable for automotive applications requiring high power and efficiency.

Q & A

  1. What is the maximum collector-emitter voltage of the STGWA60H65DFB?

    The maximum collector-emitter voltage (VCE) is 650 V.

  2. What is the continuous collector current at 25 °C and 100 °C?

    The continuous collector current is 60 A at both 25 °C and 100 °C.

  3. What is the typical collector-emitter saturation voltage (VCE(sat))?

    The typical VCE(sat) is 1.60 V.

  4. What is the maximum junction temperature (TJ) of the STGWA60H65DFB?

    The maximum junction temperature is 175 °C.

  5. What is the total power dissipation at 25 °C?

    The total power dissipation is 375 W.

  6. What is the thermal resistance junction-case (RthJC) of the STGWA60H65DFB?

    The thermal resistance junction-case is 0.4 °C/W.

  7. What is the turn-on delay time (td(on)) of the STGWA60H65DFB?

    The turn-on delay time is approximately 66 ns.

  8. What is the gate charge (Qg) of the STGWA60H65DFB?

    The gate charge is typically 306 nC.

  9. In what package is the STGWA60H65DFB available?

    The STGWA60H65DFB is available in the TO-247 package.

  10. Is the STGWA60H65DFB ECOPACK compliant?

    Yes, the STGWA60H65DFB is available in ECOPACK compliant packages.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):240 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 60A
Power - Max:375 W
Switching Energy:1.59mJ (on), 900µJ (off)
Input Type:Standard
Gate Charge:306 nC
Td (on/off) @ 25°C:66ns/210ns
Test Condition:400V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr):60 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Same Series
STGW60H65DFB
STGW60H65DFB
IGBT 650V 80A 375W TO-247
STGWA60H65DFB
STGWA60H65DFB
IGBT BIPO 650V 60A TO247-3

Similar Products

Part Number STGWA60H65DFB STGWT60H65DFB STGWA80H65DFB STGW60H65DFB STGWA30H65DFB STGWA40H65DFB
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Last Time Buy Last Time Buy Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V 650 V 650 V 650 V 650 V 650 V
Current - Collector (Ic) (Max) 80 A 80 A 120 A 80 A 60 A 80 A
Current - Collector Pulsed (Icm) 240 A 240 A 240 A 240 A 120 A 160 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A 2V @ 15V, 60A 2V @ 15V, 80A 2V @ 15V, 60A 2V @ 15V, 30A 2V @ 15V, 40A
Power - Max 375 W 375 W 469 W 375 W 260 W 283 W
Switching Energy 1.59mJ (on), 900µJ (off) 1.09mJ (on), 626µJ (off) 2.1mJ (on), 1.5mJ (off) 1.09mJ (on), 626µJ (off) 382µJ (on), 293µJ (off) 498µJ (on), 363µJ (off)
Input Type Standard Standard Standard Standard Standard Standard
Gate Charge 306 nC 306 nC 414 nC 306 nC 149 nC 210 nC
Td (on/off) @ 25°C 66ns/210ns 51ns/160ns 84ns/280ns 51ns/160ns 46ns/146ns 40ns/142ns
Test Condition 400V, 60A, 10Ohm, 15V 400V, 60A, 5Ohm, 15V 400V, 80A, 10Ohm, 15V 400V, 60A, 5Ohm, 15V 400V, 30A, 10Ohm, 15V 400V, 40A, 5Ohm, 15V
Reverse Recovery Time (trr) 60 ns 60 ns 85 ns 60 ns 140 ns 62 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-3P-3, SC-65-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-3P TO-247 Long Leads TO-247 TO-247 Long Leads TO-247 Long Leads

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