Overview
The STGW60H65DFB is an Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics using an advanced proprietary trench gate field-stop structure. This device is part of the new HB series of IGBTs, which offers an optimal balance between conduction and switching losses to maximize the efficiency of frequency converters. The inclusion of a Kelvin pin enhances switching performance by separating the power path from the driving signal. Additionally, the device features a slightly positive VCE(sat) temperature coefficient and tight parameter distribution, ensuring safer paralleling operations.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCES) | 650 | V |
| Continuous collector current at TC = 25 °C | 80 (limited by bond wires) | A |
| Continuous collector current at TC = 100 °C | 60 | A |
| Pulsed collector current | 240 | A |
| Gate-emitter voltage (VGE) | ±20 | V |
| Total power dissipation at TC = 25 °C | 375 | W |
| Storage temperature range | -55 to 150 | °C |
| Operating junction temperature range | -55 to 175 | °C |
| Thermal resistance junction-case (RthJC) IGBT | 0.4 | °C/W |
| Thermal resistance junction-case (RthJC) diode | 1.14 | °C/W |
| Thermal resistance junction-ambient (RthJA) | 50 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 60 A, VGE = 15 V | 1.60 - 2.0 | V |
| Forward on-voltage (VF) at IF = 60 A | 2 - 2.6 | V |
Key Features
- Advanced proprietary trench gate field-stop structure
- Maximum junction temperature: TJ = 175 °C
- Excellent switching performance thanks to the extra driving Kelvin pin
- Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Minimized tail current
- Tight parameter distribution for safer paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- High frequency converters
Q & A
- What is the collector-emitter voltage rating of the STGW60H65DFB?
The collector-emitter voltage (VCES) is rated at 650 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 80 A at TC = 25 °C and 60 A at TC = 100 °C.
- What is the maximum pulsed collector current?
The maximum pulsed collector current is 240 A.
- What is the gate-emitter voltage range?
The gate-emitter voltage (VGE) range is ±20 V.
- What is the total power dissipation at 25 °C?
The total power dissipation at TC = 25 °C is 375 W.
- What are the storage and operating junction temperature ranges?
The storage temperature range is -55 to 150 °C, and the operating junction temperature range is -55 to 175 °C.
- What is the thermal resistance junction-case for the IGBT and diode?
The thermal resistance junction-case (RthJC) for the IGBT is 0.4 °C/W, and for the diode, it is 1.14 °C/W.
- What are the typical applications of the STGW60H65DFB?
The typical applications include photovoltaic inverters and high frequency converters.
- What is the significance of the Kelvin pin in this IGBT?
The Kelvin pin enhances switching performance by separating the power path from the driving signal.
- How does the VCE(sat) temperature coefficient affect the device?
The slightly positive VCE(sat) temperature coefficient ensures safer paralleling operations.
