Overview
The FGH75T65SQDNL4 is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, featuring a robust and cost-effective Field Stop IV Trench construction. This device is designed to provide superior performance in demanding switching applications, offering low on-state voltage and minimal switching losses. It is packaged in a TO-247-4L package, which reduces Eon losses compared to the standard TO-247-3L package. The IGBT includes a soft and fast co-packaged free-wheeling diode with a low forward voltage, making it well-suited for applications such as solar inverters and uninterruptible power supplies (UPS).
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCES | 650 | V |
| Collector current @ TC = 25°C | IC | 150 | A |
| Collector current @ TC = 100°C | IC | 75 | A |
| Diode Forward Current @ TC = 25°C | IF | 150 | A |
| Diode Forward Current @ TC = 100°C | IF | 75 | A |
| Diode Pulsed Current | IFM | 300 | A |
| Pulsed collector current, Tpulse limited by TJ Max | ICM | 300 | A |
| Gate-emitter voltage | VGE | ±20 | V |
| Transient gate-emitter voltage (TPULSE = 5 μs, D < 0.10) | VGE | ±30 | V |
| Power Dissipation @ TC = 25°C | PD | 375 | W |
| Power Dissipation @ TC = 100°C | PD | 188 | W |
| Operating junction temperature range | TJ | -55 to +175 | °C |
| Storage temperature range | Tstg | -55 to +175 | °C |
| Lead temperature for soldering, 1/8″ from case for 5 seconds | TSLD | 260 | °C |
| Thermal resistance junction-to-case, for IGBT | RJC | 0.4 | °C/W |
| Thermal resistance junction-to-case, for Diode | RJC | 0.65 | °C/W |
| Thermal resistance junction-to-ambient | RJA | 40 | °C/W |
Key Features
- Extremely Efficient Trench with Field Stop Technology
- Maximum Junction Temperature (TJmax) of 175°C
- Improved Gate Control Lowers Switching Losses
- Separate Emitter Drive Pin
- TO-247-4L package for Minimal Eon Losses
- Optimized for High Speed Switching
- 100% of the Parts Tested for ILM (Insulated Gate Bipolar Transistor Latch-up Immunity)
- Pb-Free Devices
Applications
- Solar Inverter
- Uninterruptible Power Inverter Supplies (UPS)
- Neutral Point Clamp Topology
Q & A
- What is the maximum collector-emitter voltage of the FGH75T65SQDNL4 IGBT?
The maximum collector-emitter voltage (VCES) is 650 V.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current at 25°C is 150 A, and at 100°C it is 75 A.
- What is the thermal resistance junction-to-case for the IGBT and the diode?
The thermal resistance junction-to-case for the IGBT is 0.4 °C/W, and for the diode, it is 0.65 °C/W.
- What are the typical applications of the FGH75T65SQDNL4 IGBT?
The typical applications include solar inverters, uninterruptible power supplies (UPS), and neutral point clamp topology.
- What is the maximum junction temperature of the FGH75T65SQDNL4 IGBT?
The maximum junction temperature (TJmax) is 175°C.
- What is the package type of the FGH75T65SQDNL4 IGBT?
The IGBT is packaged in a TO-247-4L package.
- Does the FGH75T65SQDNL4 IGBT include a free-wheeling diode?
Yes, it includes a soft and fast co-packaged free-wheeling diode with a low forward voltage.
- What are the benefits of the Field Stop IV Trench construction in the FGH75T65SQDNL4 IGBT?
The Field Stop IV Trench construction provides superior performance in demanding switching applications, offering low on-state voltage and minimal switching losses.
- Is the FGH75T65SQDNL4 IGBT Pb-free?
Yes, the FGH75T65SQDNL4 IGBT is a Pb-free device.
- What is the typical turn-on delay time and turn-off delay time at 25°C?
The typical turn-on delay time is 59 ns, and the typical turn-off delay time is 354 ns at 25°C.
