FGH75T65SQDNL4
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onsemi FGH75T65SQDNL4

Manufacturer No:
FGH75T65SQDNL4
Manufacturer:
onsemi
Package:
Tube
Description:
650V/75 FAST IGBT FSIII T
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGH75T65SQDNL4 is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi, featuring a robust and cost-effective Field Stop IV Trench construction. This device is designed to provide superior performance in demanding switching applications, offering low on-state voltage and minimal switching losses. It is packaged in a TO-247-4L package, which reduces Eon losses compared to the standard TO-247-3L package. The IGBT includes a soft and fast co-packaged free-wheeling diode with a low forward voltage, making it well-suited for applications such as solar inverters and uninterruptible power supplies (UPS).

Key Specifications

Rating Symbol Value Unit
Collector-emitter voltage VCES 650 V
Collector current @ TC = 25°C IC 150 A
Collector current @ TC = 100°C IC 75 A
Diode Forward Current @ TC = 25°C IF 150 A
Diode Forward Current @ TC = 100°C IF 75 A
Diode Pulsed Current IFM 300 A
Pulsed collector current, Tpulse limited by TJ Max ICM 300 A
Gate-emitter voltage VGE ±20 V
Transient gate-emitter voltage (TPULSE = 5 μs, D < 0.10) VGE ±30 V
Power Dissipation @ TC = 25°C PD 375 W
Power Dissipation @ TC = 100°C PD 188 W
Operating junction temperature range TJ -55 to +175 °C
Storage temperature range Tstg -55 to +175 °C
Lead temperature for soldering, 1/8″ from case for 5 seconds TSLD 260 °C
Thermal resistance junction-to-case, for IGBT RJC 0.4 °C/W
Thermal resistance junction-to-case, for Diode RJC 0.65 °C/W
Thermal resistance junction-to-ambient RJA 40 °C/W

Key Features

  • Extremely Efficient Trench with Field Stop Technology
  • Maximum Junction Temperature (TJmax) of 175°C
  • Improved Gate Control Lowers Switching Losses
  • Separate Emitter Drive Pin
  • TO-247-4L package for Minimal Eon Losses
  • Optimized for High Speed Switching
  • 100% of the Parts Tested for ILM (Insulated Gate Bipolar Transistor Latch-up Immunity)
  • Pb-Free Devices

Applications

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Neutral Point Clamp Topology

Q & A

  1. What is the maximum collector-emitter voltage of the FGH75T65SQDNL4 IGBT?

    The maximum collector-emitter voltage (VCES) is 650 V.

  2. What is the maximum collector current at 25°C and 100°C?

    The maximum collector current at 25°C is 150 A, and at 100°C it is 75 A.

  3. What is the thermal resistance junction-to-case for the IGBT and the diode?

    The thermal resistance junction-to-case for the IGBT is 0.4 °C/W, and for the diode, it is 0.65 °C/W.

  4. What are the typical applications of the FGH75T65SQDNL4 IGBT?

    The typical applications include solar inverters, uninterruptible power supplies (UPS), and neutral point clamp topology.

  5. What is the maximum junction temperature of the FGH75T65SQDNL4 IGBT?

    The maximum junction temperature (TJmax) is 175°C.

  6. What is the package type of the FGH75T65SQDNL4 IGBT?

    The IGBT is packaged in a TO-247-4L package.

  7. Does the FGH75T65SQDNL4 IGBT include a free-wheeling diode?

    Yes, it includes a soft and fast co-packaged free-wheeling diode with a low forward voltage.

  8. What are the benefits of the Field Stop IV Trench construction in the FGH75T65SQDNL4 IGBT?

    The Field Stop IV Trench construction provides superior performance in demanding switching applications, offering low on-state voltage and minimal switching losses.

  9. Is the FGH75T65SQDNL4 IGBT Pb-free?

    Yes, the FGH75T65SQDNL4 IGBT is a Pb-free device.

  10. What is the typical turn-on delay time and turn-off delay time at 25°C?

    The typical turn-on delay time is 59 ns, and the typical turn-off delay time is 354 ns at 25°C.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):200 A
Current - Collector Pulsed (Icm):200 A
Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 75A
Power - Max:375 W
Switching Energy:1.25mJ (on), 1.26mJ (off)
Input Type:Standard
Gate Charge:152 nC
Td (on/off) @ 25°C:44ns/208ns
Test Condition:400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr):134 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-4
Supplier Device Package:TO-247-4L
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Similar Products

Part Number FGH75T65SQDNL4 FGH75T65SQDTL4
Manufacturer onsemi onsemi
Product Status Active Active
IGBT Type Trench Field Stop -
Voltage - Collector Emitter Breakdown (Max) 650 V -
Current - Collector (Ic) (Max) 200 A -
Current - Collector Pulsed (Icm) 200 A -
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A -
Power - Max 375 W -
Switching Energy 1.25mJ (on), 1.26mJ (off) -
Input Type Standard -
Gate Charge 152 nC -
Td (on/off) @ 25°C 44ns/208ns -
Test Condition 400V, 75A, 10Ohm, 15V -
Reverse Recovery Time (trr) 134 ns -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole -
Package / Case TO-247-4 -
Supplier Device Package TO-247-4L -

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