Overview
The STGW20V60DF is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. It is part of the 'V' series of IGBTs, which are designed to optimize the balance between conduction and switching losses, thereby maximizing the efficiency of very high frequency converters. This device utilizes an advanced proprietary trench gate and field stop structure, ensuring very high speed switching capabilities and low saturation voltage.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-emitter voltage (VCE) | 600 | V |
| Continuous collector current at TC = 25 °C | 40 | A |
| Continuous collector current at TC = 100 °C | 20 | A |
| Pulsed collector current | 80 | A |
| Gate-emitter voltage (VGE) | ±20 | V |
| Maximum junction temperature (TJ) | -55 to 175 | °C |
| Thermal resistance junction-case (RthJC) - IGBT | 0.9 | °C/W |
| Thermal resistance junction-case (RthJC) - Diode | 2.08 | °C/W |
| Collector-emitter saturation voltage (VCE(sat)) at IC = 20 A | 1.8 - 2.2 | V |
| Forward on-voltage (VF) at IF = 20 A | 1.7 - 2.2 | V |
| Gate threshold voltage (VGE(th)) | 5 - 7 | V |
Key Features
- Very high speed switching series with tail-less switching off
- Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A
- Tight parameters distribution for safer paralleling operation
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Positive VCE(sat) temperature coefficient
- Lead-free package options
- ECOPACK® packages for environmental compliance
Applications
- Photovoltaic inverters
- Uninterruptible power supply (UPS)
- Welding equipment
- Power factor correction (PFC)
- Very high frequency converters
Q & A
- What is the maximum collector-emitter voltage of the STGW20V60DF IGBT?
The maximum collector-emitter voltage (VCE) is 600 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 40 A at 25 °C and 20 A at 100 °C.
- What is the typical collector-emitter saturation voltage (VCE(sat)) at 20 A?
The typical VCE(sat) is 1.8 V at IC = 20 A.
- What are the thermal resistance values for the IGBT and diode?
The thermal resistance junction-case (RthJC) is 0.9 °C/W for the IGBT and 2.08 °C/W for the diode.
- What are the key features of the STGW20V60DF IGBT?
Key features include very high speed switching, low saturation voltage, tight parameters distribution, low thermal resistance, and a very fast soft recovery antiparallel diode.
- What are the typical applications of the STGW20V60DF IGBT?
Typical applications include photovoltaic inverters, UPS, welding equipment, power factor correction, and very high frequency converters.
- What is the maximum junction temperature of the STGW20V60DF IGBT?
The maximum junction temperature (TJ) is 175 °C.
- Does the STGW20V60DF come in lead-free packages?
- What is the gate threshold voltage (VGE(th)) of the STGW20V60DF IGBT?
The gate threshold voltage (VGE(th)) is between 5 to 7 V.
- What is the significance of the ECOPACK® packaging?
ECOPACK® packaging ensures environmental compliance and is available in different grades depending on the level of environmental requirements.
