Overview
The STGB10NB37LZ is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This component utilizes the advanced PowerMESH™ process, which provides an excellent trade-off between switching performance and low on-state behavior. It is designed to operate at high voltages and currents, making it suitable for a variety of power management and control applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector-Emitter Voltage (VCE) | 410 | V |
Continuous Collector Current (IC) | 20 | A |
Pulse Collector Current (ICM) | 40 | A |
Voltage Drop (VCE(sat)) | < 1.8 | V |
Power Dissipation (Pc) | 125 | W |
Package Type | TO-247 Long Leads |
Key Features
- Internally clamped IGBT for simplified design and reduced component count.
- Low on-state voltage drop (< 1.8 V) for high efficiency.
- High switching performance due to the PowerMESH™ process.
- Low thermal resistance for better heat management.
- Reverse battery protection for enhanced reliability.
Applications
The STGB10NB37LZ IGBT is suitable for various high-power applications, including:
- Power supplies and DC-DC converters.
- Motor control and drives.
- Uninterruptible Power Supplies (UPS).
- Renewable energy systems such as solar and wind power inverters.
- Industrial automation and control systems.
Q & A
- What is the maximum collector-emitter voltage of the STGB10NB37LZ?
The maximum collector-emitter voltage is 410 V. - What is the continuous collector current rating of this IGBT?
The continuous collector current rating is 20 A. - What package type is the STGB10NB37LZ available in?
The STGB10NB37LZ is available in the TO-247 long leads package. - What is the typical on-state voltage drop of this IGBT?
The typical on-state voltage drop is less than 1.8 V. - Does the STGB10NB37LZ have reverse battery protection?
Yes, it includes reverse battery protection. - What is the maximum power dissipation of the STGB10NB37LZ?
The maximum power dissipation is 125 W. - What process technology is used in the STGB10NB37LZ?
The STGB10NB37LZ uses the advanced PowerMESH™ process. - In which types of applications is the STGB10NB37LZ commonly used?
It is commonly used in power supplies, motor control, UPS, renewable energy systems, and industrial automation. - Where can I find detailed specifications for the STGB10NB37LZ?
Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser and Digi-Key. - What are the benefits of using the PowerMESH™ process in the STGB10NB37LZ?
The PowerMESH™ process provides an excellent trade-off between switching performance and low on-state behavior, enhancing overall efficiency and reliability.