STGB10NB37LZ
  • Share:

STMicroelectronics STGB10NB37LZ

Manufacturer No:
STGB10NB37LZ
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 440V 20A 125W D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGB10NB37LZ is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This component utilizes the advanced PowerMESH™ process, which provides an excellent trade-off between switching performance and low on-state behavior. It is designed to operate at high voltages and currents, making it suitable for a variety of power management and control applications.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCE)410V
Continuous Collector Current (IC)20A
Pulse Collector Current (ICM)40A
Voltage Drop (VCE(sat))< 1.8V
Power Dissipation (Pc)125W
Package TypeTO-247 Long Leads

Key Features

  • Internally clamped IGBT for simplified design and reduced component count.
  • Low on-state voltage drop (< 1.8 V) for high efficiency.
  • High switching performance due to the PowerMESH™ process.
  • Low thermal resistance for better heat management.
  • Reverse battery protection for enhanced reliability.

Applications

The STGB10NB37LZ IGBT is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Uninterruptible Power Supplies (UPS).
  • Renewable energy systems such as solar and wind power inverters.
  • Industrial automation and control systems.

Q & A

  1. What is the maximum collector-emitter voltage of the STGB10NB37LZ?
    The maximum collector-emitter voltage is 410 V.
  2. What is the continuous collector current rating of this IGBT?
    The continuous collector current rating is 20 A.
  3. What package type is the STGB10NB37LZ available in?
    The STGB10NB37LZ is available in the TO-247 long leads package.
  4. What is the typical on-state voltage drop of this IGBT?
    The typical on-state voltage drop is less than 1.8 V.
  5. Does the STGB10NB37LZ have reverse battery protection?
    Yes, it includes reverse battery protection.
  6. What is the maximum power dissipation of the STGB10NB37LZ?
    The maximum power dissipation is 125 W.
  7. What process technology is used in the STGB10NB37LZ?
    The STGB10NB37LZ uses the advanced PowerMESH™ process.
  8. In which types of applications is the STGB10NB37LZ commonly used?
    It is commonly used in power supplies, motor control, UPS, renewable energy systems, and industrial automation.
  9. Where can I find detailed specifications for the STGB10NB37LZ?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser and Digi-Key.
  10. What are the benefits of using the PowerMESH™ process in the STGB10NB37LZ?
    The PowerMESH™ process provides an excellent trade-off between switching performance and low on-state behavior, enhancing overall efficiency and reliability.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):440 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:1.8V @ 4.5V, 10A
Power - Max:125 W
Switching Energy:2.4mJ (on), 5mJ (off)
Input Type:Standard
Gate Charge:28 nC
Td (on/off) @ 25°C:1.3µs/8µs
Test Condition:328V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
0 Remaining View Similar

In Stock

-
342

Please send RFQ , we will respond immediately.

Same Series
STGP10NB37LZ
STGP10NB37LZ
IGBT 440V 20A 125W TO220
STGB10NB37LZ
STGB10NB37LZ
IGBT 440V 20A 125W D2PAK

Similar Products

Part Number STGB10NB37LZ STGB20NB37LZ
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 440 V 425 V
Current - Collector (Ic) (Max) 20 A 40 A
Current - Collector Pulsed (Icm) 40 A 80 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A 2V @ 4.5V, 20A
Power - Max 125 W 200 W
Switching Energy 2.4mJ (on), 5mJ (off) 11.8mJ (off)
Input Type Standard Standard
Gate Charge 28 nC 51 nC
Td (on/off) @ 25°C 1.3µs/8µs 2.3µs/2µs
Test Condition 328V, 10A, 1kOhm, 5V 250V, 20A, 1kOhm, 4.5V
Reverse Recovery Time (trr) - -
Operating Temperature -65°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263) D2PAK

Related Product By Categories

FGH40N60SMDF
FGH40N60SMDF
onsemi
IGBT FIELD STOP 600V 80A TO247-3
STGW40H120F2
STGW40H120F2
STMicroelectronics
IGBT 1200V 40A HS TO-247
STGP30H60DF
STGP30H60DF
STMicroelectronics
IGBT 600V 60A 260W TO220
STGWT30H60DFB
STGWT30H60DFB
STMicroelectronics
IGBT 600V 60A 260W TO3PL
STGW30NC60WD
STGW30NC60WD
STMicroelectronics
IGBT 600V 60A 200W TO247
FGH40T120SMD
FGH40T120SMD
onsemi
IGBT TRENCH/FS 1200V 80A TO247-3
STGB40H65FB
STGB40H65FB
STMicroelectronics
IGBT BIPO 650V 40A D2PAK
STGW35HF60WDI
STGW35HF60WDI
STMicroelectronics
IGBT 600V 60A 200W TO-247
FGH50T65SQD-F155
FGH50T65SQD-F155
onsemi
IGBT TRENCH/FS 650V 100A TO247-3
FGAF20S65AQ
FGAF20S65AQ
onsemi
IGBT 650V 20A TO-3PF
STGWT20IH125DF
STGWT20IH125DF
STMicroelectronics
IGBT 1250V 40A 259W TO-3P
STGFW40V60DF
STGFW40V60DF
STMicroelectronics
IGBT 600V 80A 62.5W TO-3PF

Related Product By Brand

BD140-16
BD140-16
STMicroelectronics
TRANS PNP 80V 1.5A SOT32
STF14NM50N
STF14NM50N
STMicroelectronics
MOSFET N-CH 500V 12A TO220FP
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STP40NF03L
STP40NF03L
STMicroelectronics
MOSFET N-CH 30V 40A TO220AB
SCT30N120H
SCT30N120H
STMicroelectronics
SICFET N-CH 1200V 40A H2PAK-2
STP6NK90ZFP
STP6NK90ZFP
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220FP
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
TDA7491LP
TDA7491LP
STMicroelectronics
IC AMP CLSS D STER 5W POWERSSO36
TS274AIPT
TS274AIPT
STMicroelectronics
IC CMOS 4 CIRCUIT 14TSSOP
TSV6290AICT
TSV6290AICT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT SC70-6
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
LPR450AL
LPR450AL
STMicroelectronics
GYRO 500DEG/S 2MV 140HZ 28LGA