STGB10NB37LZ
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STMicroelectronics STGB10NB37LZ

Manufacturer No:
STGB10NB37LZ
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 440V 20A 125W D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The STGB10NB37LZ is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This component utilizes the advanced PowerMESH™ process, which provides an excellent trade-off between switching performance and low on-state behavior. It is designed to operate at high voltages and currents, making it suitable for a variety of power management and control applications.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCE)410V
Continuous Collector Current (IC)20A
Pulse Collector Current (ICM)40A
Voltage Drop (VCE(sat))< 1.8V
Power Dissipation (Pc)125W
Package TypeTO-247 Long Leads

Key Features

  • Internally clamped IGBT for simplified design and reduced component count.
  • Low on-state voltage drop (< 1.8 V) for high efficiency.
  • High switching performance due to the PowerMESH™ process.
  • Low thermal resistance for better heat management.
  • Reverse battery protection for enhanced reliability.

Applications

The STGB10NB37LZ IGBT is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Uninterruptible Power Supplies (UPS).
  • Renewable energy systems such as solar and wind power inverters.
  • Industrial automation and control systems.

Q & A

  1. What is the maximum collector-emitter voltage of the STGB10NB37LZ?
    The maximum collector-emitter voltage is 410 V.
  2. What is the continuous collector current rating of this IGBT?
    The continuous collector current rating is 20 A.
  3. What package type is the STGB10NB37LZ available in?
    The STGB10NB37LZ is available in the TO-247 long leads package.
  4. What is the typical on-state voltage drop of this IGBT?
    The typical on-state voltage drop is less than 1.8 V.
  5. Does the STGB10NB37LZ have reverse battery protection?
    Yes, it includes reverse battery protection.
  6. What is the maximum power dissipation of the STGB10NB37LZ?
    The maximum power dissipation is 125 W.
  7. What process technology is used in the STGB10NB37LZ?
    The STGB10NB37LZ uses the advanced PowerMESH™ process.
  8. In which types of applications is the STGB10NB37LZ commonly used?
    It is commonly used in power supplies, motor control, UPS, renewable energy systems, and industrial automation.
  9. Where can I find detailed specifications for the STGB10NB37LZ?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component distributors like Mouser and Digi-Key.
  10. What are the benefits of using the PowerMESH™ process in the STGB10NB37LZ?
    The PowerMESH™ process provides an excellent trade-off between switching performance and low on-state behavior, enhancing overall efficiency and reliability.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):440 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:1.8V @ 4.5V, 10A
Power - Max:125 W
Switching Energy:2.4mJ (on), 5mJ (off)
Input Type:Standard
Gate Charge:28 nC
Td (on/off) @ 25°C:1.3µs/8µs
Test Condition:328V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D²PAK (TO-263)
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Same Series
STGP10NB37LZ
STGP10NB37LZ
IGBT 440V 20A 125W TO220
STGB10NB37LZ
STGB10NB37LZ
IGBT 440V 20A 125W D2PAK

Similar Products

Part Number STGB10NB37LZ STGB20NB37LZ
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 440 V 425 V
Current - Collector (Ic) (Max) 20 A 40 A
Current - Collector Pulsed (Icm) 40 A 80 A
Vce(on) (Max) @ Vge, Ic 1.8V @ 4.5V, 10A 2V @ 4.5V, 20A
Power - Max 125 W 200 W
Switching Energy 2.4mJ (on), 5mJ (off) 11.8mJ (off)
Input Type Standard Standard
Gate Charge 28 nC 51 nC
Td (on/off) @ 25°C 1.3µs/8µs 2.3µs/2µs
Test Condition 328V, 10A, 1kOhm, 5V 250V, 20A, 1kOhm, 4.5V
Reverse Recovery Time (trr) - -
Operating Temperature -65°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D²PAK (TO-263) D2PAK

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