Overview
The IKW75N65EH5XKSA1 is a high-speed, 650 V Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, part of the TRENCHSTOP™ 5 family. This IGBT is co-packed with a RAPID 1 fast and soft anti-parallel diode and is housed in a TO-247 package. It is renowned for its best-in-class performance, offering significant improvements in efficiency and reliability compared to previous generations.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-emitter voltage | 650 V |
| Collector current | 75 A |
| Power dissipation | 198 W |
| Case | TO247-3 |
| Gate-emitter voltage | ±20 V |
| Pulsed collector current | 300 A |
| Gate charge | 160 nC |
| Turn-on time | 61 ns |
| Turn-off time | 215 ns |
| Mounting | THT (Through-Hole Technology) |
| Package | Tube |
Key Features
- 650 V breakthrough voltage
- Factor 2.5 lower Qg compared to HighSpeed 3 family
- Factor 2 reduction in switching losses
- 200 mV reduction in VCEsat
- Co-packed with RAPID 1 fast and soft anti-parallel diode
- Low COES/E OSS
- Mild positive temperature coefficient VCEsat
- Temperature stability of Vf
Applications
The IKW75N65EH5XKSA1 is suitable for various high-power applications, including but not limited to:
- Industrial power supplies
- Motor drives
- Renewable energy systems
- Power factor correction (PFC) circuits
- High-frequency switching applications
Q & A
- What is the collector-emitter voltage of the IKW75N65EH5XKSA1?
The collector-emitter voltage is 650 V. - What is the maximum collector current of this IGBT?
The maximum collector current is 75 A. - What type of diode is co-packed with this IGBT?
The IGBT is co-packed with a RAPID 1 fast and soft anti-parallel diode. - What is the package type of the IKW75N65EH5XKSA1?
The package type is TO247-3. - What are the turn-on and turn-off times of this IGBT?
The turn-on time is 61 ns, and the turn-off time is 215 ns. - What are the benefits of using the TRENCHSTOP™ 5 technology?
The benefits include best-in-class efficiency, lower junction and case temperatures, higher device reliability, and higher power density design. - What is the gate-emitter voltage range for this IGBT?
The gate-emitter voltage range is ±20 V. - What is the pulsed collector current of the IKW75N65EH5XKSA1?
The pulsed collector current is 300 A. - What is the significance of the mild positive temperature coefficient VCEsat?
This feature ensures temperature stability of VCEsat, enhancing the overall reliability of the device. - What are some typical applications for this IGBT?
Typical applications include industrial power supplies, motor drives, renewable energy systems, and high-frequency switching applications.
