Overview
The STGB10NC60KDT4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics using advanced PowerMESH technology. This device is designed to offer an excellent trade-off between switching performance and low on-state behavior, making it suitable for a variety of high-frequency applications. The STGB10NC60KDT4 is part of a family of IGBTs that include the STGD10NC60KDT4, STGF10NC60KD, and STGP10NC60KD, each available in different packages such as D²PAK, DPAK, TO-220FP, and TO-220.
Key Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Collector-emitter breakdown voltage (V(BR)CES) | IC = 1 mA, VGE = 0 V | - | - | 600 | V |
| Collector-emitter saturation voltage (VCE(sat)) | VGE = 15 V, IC = 5 A | 1.8 | 2.2 | 2.5 | V |
| Gate-emitter threshold voltage (VGE(th)) | IC = 1 mA, VCE = VGE | - | - | - | V |
| Total gate charge (Qg) | VCC = 390 V, IC = 5 A, VGE = 0 to 15 V | - | 19 | - | nC |
| Turn-on switching energy (Eon) | VCE = 390 V, IC = 5 A, RG = 10 Ω, VGE = 15 V, TJ = 125 °C | - | 87 | - | μJ |
| Turn-off switching energy (Eoff) | VCE = 390 V, IC = 5 A, RG = 10 Ω, VGE = 15 V, TJ = 125 °C | - | 162 | - | μJ |
| Short-circuit withstand time | - | - | - | 10 | μs |
| Thermal resistance, junction-to-case (RthJC) | - | - | 1.9 | - | °C/W |
| Storage temperature range (Tstg) | - | -55 | - | 150 | °C |
Key Features
- Lower On Voltage Drop (VCE(sat)): Ensures reduced power losses during operation.
- Lower CRES / CIES Ratio: Minimizes cross-conduction susceptibility, enhancing reliability.
- Very Soft Ultra Fast Recovery Antiparallel Diode: Optimizes switching performance and reduces losses.
- Short-Circuit Withstand Time: The device can withstand short-circuit conditions for up to 10 μs.
- Advanced PowerMESH Technology: Provides an excellent trade-off between switching performance and low on-state behavior.
Applications
- High Frequency Motor Controls: Suitable for high-frequency motor drive applications due to its fast switching capabilities.
- SMPS and PFC in Both Hard Switch and Resonant Topologies: Ideal for use in Switch-Mode Power Supplies (SMPS) and Power Factor Correction (PFC) circuits.
- Motor Drives: Used in various motor drive systems requiring high efficiency and reliability.
Q & A
- What is the collector-emitter breakdown voltage of the STGB10NC60KDT4?
The collector-emitter breakdown voltage (V(BR)CES) is 600 V.
- What is the typical collector-emitter saturation voltage (VCE(sat)) at 5 A and 15 V gate voltage?
The typical VCE(sat) is 2.2 V.
- What is the short-circuit withstand time of the STGB10NC60KDT4?
The device can withstand short-circuit conditions for up to 10 μs.
- What are the key features of the STGB10NC60KDT4?
The key features include lower on voltage drop, lower CRES / CIES ratio, very soft ultra fast recovery antiparallel diode, and short-circuit withstand time.
- What are the typical applications of the STGB10NC60KDT4?
Typical applications include high frequency motor controls, SMPS and PFC in both hard switch and resonant topologies, and motor drives.
- What is the thermal resistance, junction-to-case (RthJC) for the D²PAK package?
The thermal resistance, junction-to-case (RthJC) is 1.9 °C/W for the D²PAK package.
- What is the storage temperature range for the STGB10NC60KDT4?
The storage temperature range (Tstg) is from -55 °C to 150 °C.
- What is the total gate charge (Qg) at VCC = 390 V and IC = 5 A?
The total gate charge (Qg) is typically 19 nC.
- What are the available packages for the STGB10NC60KDT4?
The available packages include D²PAK, DPAK, TO-220FP, and TO-220.
- What technology is used in the development of the STGB10NC60KDT4?
The device is developed using advanced PowerMESH technology.
