Overview
The FGH40N60SMD is a Field Stop IGBT (Insulated Gate Bipolar Transistor) from ON Semiconductor, designed to offer optimal performance in various high-power applications. This 2nd generation IGBT utilizes novel field stop technology to minimize conduction and switching losses, making it ideal for use in solar inverters, UPS systems, welders, telecom equipment, Energy Storage Systems (ESS), and Power Factor Correction (PFC) applications.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector to Emitter Voltage | VCES | - | - | 600 | V |
| Gate to Emitter Voltage | VGES | - | - | ±20 | V |
| Transient Gate to Emitter Voltage | - | - | - | ±30 | V |
| Collector Current (TC = 25°C) | IC | - | - | 80 | A |
| Collector Current (TC = 100°C) | IC | - | - | 40 | A |
| Pulsed Collector Current (TC = 25°C) | ICM | - | - | 120 | A |
| Diode Forward Current (TC = 25°C) | IF | - | - | 40 | A |
| Diode Forward Current (TC = 100°C) | IF | - | - | 20 | A |
| Pulsed Diode Maximum Forward Current | IFM | - | - | 120 | A |
| Maximum Junction Temperature | TJ | -55 | - | 175 | °C |
| Thermal Resistance, Junction to Case (IGBT) | RJC | - | 0.43 | - | °C/W |
| Thermal Resistance, Junction to Ambient | RJA | - | 40 | - | °C/W |
| Collector to Emitter Saturation Voltage | VCE(sat) | - | 1.9 | 2.5 | V |
| Turn-On Switching Loss | Eon | - | 0.87 | 1.30 | mJ |
| Turn-Off Switching Loss | Eoff | - | 0.26 | 0.34 | mJ |
Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Coefficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A
- High Input Impedance
- Fast Switching: EOFF = 6.5 μJ/A
- Tighten Parameter Distribution
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant
Applications
- Solar Inverters
- Welders
- UPS (Uninterruptible Power Supplies)
- PFC (Power Factor Correction)
- Telecom Equipment
- Energy Storage Systems (ESS)
Q & A
- What is the maximum collector to emitter voltage of the FGH40N60SMD?
The maximum collector to emitter voltage is 600 V. - What is the typical collector to emitter saturation voltage at 40 A?
The typical collector to emitter saturation voltage is 1.9 V at 40 A. - What are the operating junction temperature limits for this IGBT?
The operating junction temperature range is from -55°C to 175°C. - Is the FGH40N60SMD RoHS compliant?
Yes, the FGH40N60SMD is Pb-Free, Halogen Free/BFR Free and RoHS compliant. - What are the typical turn-on and turn-off switching losses?
The typical turn-on switching loss is 0.87 mJ, and the typical turn-off switching loss is 0.26 mJ. - What is the thermal resistance from junction to case for the IGBT?
The thermal resistance from junction to case for the IGBT is 0.43 °C/W. - What are the common applications of the FGH40N60SMD?
Common applications include solar inverters, welders, UPS systems, PFC, telecom equipment, and ESS. - What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 80 A at 25°C and 40 A at 100°C. - What is the pulsed collector current rating at 25°C?
The pulsed collector current rating is 120 A at 25°C. - What is the maximum power dissipation at 25°C and 100°C?
The maximum power dissipation is 349 W at 25°C and 174 W at 100°C.
