Overview
The STGB19NC60HDT4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. This device is part of a series that includes the STGF19NC60HD, STGP19NC60HD, and STGW19NC60HD, each available in different packages such as D²PAK, TO-220FP, TO-220, and TO-247. The STGB19NC60HDT4 is designed to offer an excellent trade-off between switching performance and low on-state behavior, making it suitable for a variety of high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCE) | 600 | V |
| Continuous Collector Current at TC = 25 °C | 40 (TO-220), 16 (D²PAK), 42 (TO-220FP), 19 (TO-247) | A |
| Continuous Collector Current at TC = 100 °C | 19 (TO-220), 10 (D²PAK), 21 (TO-220FP), 19 (TO-247) | A |
| Pulsed Collector Current | 60 | A |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.8 - 2.5 | V |
| Gate Threshold Voltage (VGE(th)) | 3.75 - 5.75 | V |
| Turn-on Delay Time (td(on)) | 25 ns | ns |
| Current Rise Time (tr) | 7 ns | ns |
| Forward On-Voltage (VF) | 2.6 V | V |
| Reverse Recovery Time (trr) | 31 ns | ns |
Key Features
- Low on-voltage drop (VCE(sat))
- Very soft ultrafast recovery anti-parallel diode
- Low gate charge
- High current capability
- High voltage clamping feature
- Low threshold voltage
Applications
- High frequency motor drives
- Switch Mode Power Supplies (SMPS) and Power Factor Correction (PFC) in both hard switch and resonant topologies
- Light vehicles
- Robotics
- Power tools
- Power management
Q & A
- What is the collector-emitter voltage rating of the STGB19NC60HDT4? The collector-emitter voltage rating is 600 V.
- What are the different package options available for this IGBT? The STGB19NC60HDT4 is available in D²PAK, TO-220FP, TO-220, and TO-247 packages.
- What is the continuous collector current at 25 °C for the TO-220 package? The continuous collector current at 25 °C for the TO-220 package is 40 A.
- What is the typical turn-on delay time for this IGBT? The typical turn-on delay time is 25 ns.
- What are the key features of the STGB19NC60HDT4? Key features include low on-voltage drop, very soft ultrafast recovery anti-parallel diode, low gate charge, high current capability, high voltage clamping feature, and low threshold voltage.
- In which applications is the STGB19NC60HDT4 commonly used? It is commonly used in high frequency motor drives, SMPS and PFC, light vehicles, robotics, power tools, and power management.
- What is the reverse recovery time of the anti-parallel diode? The reverse recovery time of the anti-parallel diode is typically 31 ns.
- What is the maximum pulsed collector current for this IGBT? The maximum pulsed collector current is 60 A.
- What is the gate threshold voltage range for the STGB19NC60HDT4? The gate threshold voltage range is 3.75 to 5.75 V.
- Where can I find detailed mechanical data for the packages? Detailed mechanical data for the packages can be found in the datasheet under the package information section.
