FGY60T120SQDN
  • Share:

onsemi FGY60T120SQDN

Manufacturer No:
FGY60T120SQDN
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 1200V 60A UFS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGY60T120SQDN is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device features a robust and cost-effective Ultra Field Stop Trench construction, which enhances its performance and reliability. The IGBT is designed to provide superior characteristics, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Collector-Emitter Voltage (Vce)1200 V
Collector Current (Ic)60 A
Power Dissipation (Pd)259 W
Package TypeThrough Hole TO-247-3
Operating Temperature Range-40°C to 150°C

Key Features

  • Ultra Field Stop Trench construction for enhanced performance and cost-effectiveness.
  • High collector-emitter voltage of 1200 V and collector current of 60 A.
  • High power dissipation capability of 259 W.
  • Through Hole TO-247-3 package for easy mounting and thermal management.
  • Wide operating temperature range from -40°C to 150°C.

Applications

The FGY60T120SQDN IGBT is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power electronics and automation.
  • Electric vehicles and charging infrastructure.

Q & A

  1. What is the collector-emitter voltage of the FGY60T120SQDN IGBT?
    The collector-emitter voltage is 1200 V.
  2. What is the maximum collector current of the FGY60T120SQDN?
    The maximum collector current is 60 A.
  3. What is the power dissipation capability of the FGY60T120SQDN?
    The power dissipation capability is 259 W.
  4. What package type does the FGY60T120SQDN use?
    The package type is Through Hole TO-247-3.
  5. What is the operating temperature range of the FGY60T120SQDN?
    The operating temperature range is from -40°C to 150°C.
  6. What are the key features of the Ultra Field Stop Trench construction in the FGY60T120SQDN?
    The Ultra Field Stop Trench construction enhances performance and is cost-effective.
  7. What are some common applications of the FGY60T120SQDN IGBT?
    Common applications include power supplies, motor drives, renewable energy systems, industrial power electronics, and electric vehicles.
  8. Where can I find detailed specifications for the FGY60T120SQDN?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and TME.
  9. Is the FGY60T120SQDN RoHS compliant?
    Yes, the FGY60T120SQDN is RoHS compliant.
  10. How do I ensure proper thermal management for the FGY60T120SQDN?
    Proper thermal management can be achieved through the use of heat sinks and ensuring good thermal contact with the TO-247-3 package.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):120 A
Current - Collector Pulsed (Icm):240 A
Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 60A
Power - Max:517 W
Switching Energy:- 
Input Type:Standard
Gate Charge:311 nC
Td (on/off) @ 25°C:52ns/296ns
Test Condition:600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3 Variant
Supplier Device Package:TO-247-3
0 Remaining View Similar

In Stock

$9.58
89

Please send RFQ , we will respond immediately.

Same Series
CBC9W4S10HE2X/AA
CBC9W4S10HE2X/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WES/AA
DD15S20WES/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20WV5S
DD15S20WV5S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200E20/AA
DD26S200E20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V3X/AA
DD26S2S0V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP

Related Product By Categories

STGWA40H65DFB2
STGWA40H65DFB2
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V 40
FGA40T65SHDF
FGA40T65SHDF
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
FGH60T65SHD-F155
FGH60T65SHD-F155
onsemi
IGBT TRENCH/FS 650V 120A TO247
FGD3040G2-F085
FGD3040G2-F085
onsemi
IGBT 400V 41A TO252AA
STGB10H60DF
STGB10H60DF
STMicroelectronics
IGBT 600V 20A 115W D2PAK
STGB20NB41LZT4
STGB20NB41LZT4
STMicroelectronics
IGBT 442V 40A 200W D2PAK
FGA50T65SHD
FGA50T65SHD
onsemi
IGBT TRENCH/FS 650V 100A TO3PN
FGH75T65SQD-F155
FGH75T65SQD-F155
onsemi
IGBT 650V 150A 375W TO247
FGH75T65SQDNL4
FGH75T65SQDNL4
onsemi
650V/75 FAST IGBT FSIII T
STGB20H60DF
STGB20H60DF
STMicroelectronics
IGBT 600V 40A 167W D2PAK
STGW35HF60WD
STGW35HF60WD
STMicroelectronics
IGBT 600V 60A 200W TO-247
FGA50T65SHD-01
FGA50T65SHD-01
onsemi
FGA50T65SHD-01

Related Product By Brand

1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
MC78PC30NTRG
MC78PC30NTRG
onsemi
IC REG LINEAR 3V 150MA 5TSOP
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP