FGY60T120SQDN
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onsemi FGY60T120SQDN

Manufacturer No:
FGY60T120SQDN
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT 1200V 60A UFS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGY60T120SQDN is an Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device features a robust and cost-effective Ultra Field Stop Trench construction, which enhances its performance and reliability. The IGBT is designed to provide superior characteristics, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Collector-Emitter Voltage (Vce)1200 V
Collector Current (Ic)60 A
Power Dissipation (Pd)259 W
Package TypeThrough Hole TO-247-3
Operating Temperature Range-40°C to 150°C

Key Features

  • Ultra Field Stop Trench construction for enhanced performance and cost-effectiveness.
  • High collector-emitter voltage of 1200 V and collector current of 60 A.
  • High power dissipation capability of 259 W.
  • Through Hole TO-247-3 package for easy mounting and thermal management.
  • Wide operating temperature range from -40°C to 150°C.

Applications

The FGY60T120SQDN IGBT is suitable for various high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor drives and control systems.
  • Renewable energy systems such as solar and wind power.
  • Industrial power electronics and automation.
  • Electric vehicles and charging infrastructure.

Q & A

  1. What is the collector-emitter voltage of the FGY60T120SQDN IGBT?
    The collector-emitter voltage is 1200 V.
  2. What is the maximum collector current of the FGY60T120SQDN?
    The maximum collector current is 60 A.
  3. What is the power dissipation capability of the FGY60T120SQDN?
    The power dissipation capability is 259 W.
  4. What package type does the FGY60T120SQDN use?
    The package type is Through Hole TO-247-3.
  5. What is the operating temperature range of the FGY60T120SQDN?
    The operating temperature range is from -40°C to 150°C.
  6. What are the key features of the Ultra Field Stop Trench construction in the FGY60T120SQDN?
    The Ultra Field Stop Trench construction enhances performance and is cost-effective.
  7. What are some common applications of the FGY60T120SQDN IGBT?
    Common applications include power supplies, motor drives, renewable energy systems, industrial power electronics, and electric vehicles.
  8. Where can I find detailed specifications for the FGY60T120SQDN?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key and TME.
  9. Is the FGY60T120SQDN RoHS compliant?
    Yes, the FGY60T120SQDN is RoHS compliant.
  10. How do I ensure proper thermal management for the FGY60T120SQDN?
    Proper thermal management can be achieved through the use of heat sinks and ensuring good thermal contact with the TO-247-3 package.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):120 A
Current - Collector Pulsed (Icm):240 A
Vce(on) (Max) @ Vge, Ic:1.95V @ 15V, 60A
Power - Max:517 W
Switching Energy:- 
Input Type:Standard
Gate Charge:311 nC
Td (on/off) @ 25°C:52ns/296ns
Test Condition:600V, 60A, 10Ohm, 15V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3 Variant
Supplier Device Package:TO-247-3
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