IKW50N60TFKSA1
  • Share:

Infineon Technologies IKW50N60TFKSA1

Manufacturer No:
IKW50N60TFKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IGBT TRENCH/FS 600V 80A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IKW50N60TFKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. This component is part of the TRENCHSTOP™ series, known for its advanced technology and robust performance. The IKW50N60TFKSA1 is designed for high-power applications, offering a collector-emitter voltage of 600V and a collector current of 50A. It is packaged in a TO-247-3 case and features a through-hole mounting method, making it suitable for a variety of industrial and automotive applications.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCE) 600 V
Collector Current (IC) at 25°C 50 A
Pulsed Collector Current (IC(puls)) 150 A
Power Dissipation (Ptot) 333 W
Gate-Emitter Voltage (VGE) ±20 V
Collector-Emitter Saturation Voltage (VCE(sat)) 1.5 V
Turn-on Delay Time (td(on)) 26 ns
Turn-off Delay Time (td(off)) 299 ns
Gate Charge (Qg) 310 nC
Reverse Recovery Time (trr) 143 ns
Leakage Current 100 nA
Input Capacitance 3140 pF
Operating Junction Temperature Range -40°C to +175°C °C
Number of Terminals 3
Package Style TO-247-3
Mounting Method Through Hole

Key Features

  • Advanced TRENCHSTOP™ Technology: Offers low conduction losses and high switching speeds.
  • Integrated Anti-Parallel Diode: Enhances the component's performance in inductive load applications.
  • Low Collector-Emitter Saturation Voltage (VCE(sat)): Typically 1.5V, reducing energy losses.
  • High Short Circuit Withstand Time: Up to 5μs, ensuring robust operation under transient conditions.
  • Wide Operating Junction Temperature Range: From -40°C to +175°C, making it suitable for various environmental conditions.

Applications

  • Industrial Power Supplies: Suitable for high-power DC-DC converters and power supplies.
  • Automotive Systems: Used in electric vehicles, hybrid vehicles, and other automotive power electronics.
  • Renewable Energy Systems: Applicable in solar and wind power inverters and converters.
  • Motor Drives: Ideal for high-performance motor control and drive systems.
  • Aerospace and Aviation: With express written approval, it can be used in life-support and safety-critical systems.

Q & A

  1. What is the collector-emitter voltage of the IKW50N60TFKSA1 IGBT?

    The collector-emitter voltage is 600V.

  2. What is the maximum collector current of the IKW50N60TFKSA1 at 25°C?

    The maximum collector current is 50A.

  3. What is the power dissipation capability of the IKW50N60TFKSA1?

    The power dissipation is 333W.

  4. Does the IKW50N60TFKSA1 have an integrated anti-parallel diode?

    Yes, it features an integrated anti-parallel diode.

  5. What is the typical collector-emitter saturation voltage of the IKW50N60TFKSA1?

    The typical collector-emitter saturation voltage is 1.5V.

  6. What is the turn-on delay time of the IKW50N60TFKSA1?

    The turn-on delay time is 26ns.

  7. What is the operating junction temperature range of the IKW50N60TFKSA1?

    The operating junction temperature range is from -40°C to +175°C.

  8. What is the package style and mounting method of the IKW50N60TFKSA1?

    The package style is TO-247-3, and the mounting method is through-hole.

  9. Can the IKW50N60TFKSA1 be used in life-support devices or systems?

    Only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system.

  10. What is the short circuit withstand time of the IKW50N60TFKSA1?

    The short circuit withstand time is up to 5μs.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 50A
Power - Max:333 W
Switching Energy:2.6mJ
Input Type:Standard
Gate Charge:310 nC
Td (on/off) @ 25°C:26ns/299ns
Test Condition:400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr):143 ns
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3-1
0 Remaining View Similar

In Stock

$7.07
97

Please send RFQ , we will respond immediately.

Same Series
IKW50N60TFKSA1
IKW50N60TFKSA1
IGBT TRENCH/FS 600V 80A TO247-3

Similar Products

Part Number IKW50N60TFKSA1 IKW20N60TFKSA1 IKW30N60TFKSA1 IKW50N60TAFKSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Obsolete
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 80 A 40 A 60 A 80 A
Current - Collector Pulsed (Icm) 150 A 60 A 90 A 150 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A 2.05V @ 15V, 20A 2.05V @ 15V, 30A 2V @ 15V, 50A
Power - Max 333 W 166 W 187 W 333 W
Switching Energy 2.6mJ 770µJ 1.46mJ 2.6mJ
Input Type Standard Standard Standard Standard
Gate Charge 310 nC 120 nC 167 nC 310 nC
Td (on/off) @ 25°C 26ns/299ns 18ns/199ns 23ns/254ns 26ns/299ns
Test Condition 400V, 50A, 7Ohm, 15V 400V, 20A, 12Ohm, 15V 400V, 30A, 10.6Ohm, 15V 400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr) 143 ns 41 ns 143 ns 143 ns
Operating Temperature -40°C ~ 175°C (TJ) - -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-1

Related Product By Categories

STGP10NC60KD
STGP10NC60KD
STMicroelectronics
IGBT 600V 20A 65W TO220
FGA20N120FTDTU
FGA20N120FTDTU
onsemi
IGBT 1200V 40A 298W TO3PN
STGF3NC120HD
STGF3NC120HD
STMicroelectronics
IGBT 1200V 6A 25W TO220FP
IKW40N120H3FKSA1
IKW40N120H3FKSA1
Infineon Technologies
IGBT 1200V 80A 483W TO247-3
AFGY100T65SPD
AFGY100T65SPD
onsemi
IGBT - 650 V 100 A FS3 FOR EV TR
STGD5H60DF
STGD5H60DF
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, H S
STGW20NC60VD
STGW20NC60VD
STMicroelectronics
IGBT 600V 60A 200W TO247
STGW40H65DFB
STGW40H65DFB
STMicroelectronics
IGBT 650V 80A 283W TO-247
FGH75T65SQDT-F155
FGH75T65SQDT-F155
onsemi
650V 75A FS4 TRENCH IGBT
FGD3245G2-F085C
FGD3245G2-F085C
onsemi
ECOSPARK2 IGN-IGBT TO252
FGH40N60SMDF-F085
FGH40N60SMDF-F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
NGB8202NT4G
NGB8202NT4G
onsemi
IGBT 440V 20A 150W D2PAK

Related Product By Brand

BAS21E6327HTSA1
BAS21E6327HTSA1
Infineon Technologies
DIODE GP 200V 250MA SOT23-3
BC857CE6327HTSA1
BC857CE6327HTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC817SUE6327HTSA1
BC817SUE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SC74-6
BC850CE6327HTSA1
BC850CE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT-23
MMBTA56LT1HTSA1
MMBTA56LT1HTSA1
Infineon Technologies
TRANS PNP 80V 0.5A SOT23
BC 817-25 B5003
BC 817-25 B5003
Infineon Technologies
TRANS NPN 45V 0.5A SOT23
IRF540NPBF
IRF540NPBF
Infineon Technologies
MOSFET N-CH 100V 33A TO220AB
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
TLD5098ELXUMA1
TLD5098ELXUMA1
Infineon Technologies
IC LED DRIVER CTRLR PWM 14SSOP
BTS72002EPAXUMA1
BTS72002EPAXUMA1
Infineon Technologies
IC PWR SWTCH N-CHAN 1:1 TSDSO-14
BTS4142NNT
BTS4142NNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 SOT223
STK14CA8-NF45ITR
STK14CA8-NF45ITR
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 32SOIC