Overview
The IKW50N60TFKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. This component is part of the TRENCHSTOP™ series, known for its advanced technology and robust performance. The IKW50N60TFKSA1 is designed for high-power applications, offering a collector-emitter voltage of 600V and a collector current of 50A. It is packaged in a TO-247-3 case and features a through-hole mounting method, making it suitable for a variety of industrial and automotive applications.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Collector-Emitter Voltage (VCE) | 600 | V |
Collector Current (IC) at 25°C | 50 | A |
Pulsed Collector Current (IC(puls)) | 150 | A |
Power Dissipation (Ptot) | 333 | W |
Gate-Emitter Voltage (VGE) | ±20 | V |
Collector-Emitter Saturation Voltage (VCE(sat)) | 1.5 | V |
Turn-on Delay Time (td(on)) | 26 | ns |
Turn-off Delay Time (td(off)) | 299 | ns |
Gate Charge (Qg) | 310 | nC |
Reverse Recovery Time (trr) | 143 | ns |
Leakage Current | 100 | nA |
Input Capacitance | 3140 | pF |
Operating Junction Temperature Range | -40°C to +175°C | °C |
Number of Terminals | 3 | |
Package Style | TO-247-3 | |
Mounting Method | Through Hole |
Key Features
- Advanced TRENCHSTOP™ Technology: Offers low conduction losses and high switching speeds.
- Integrated Anti-Parallel Diode: Enhances the component's performance in inductive load applications.
- Low Collector-Emitter Saturation Voltage (VCE(sat)): Typically 1.5V, reducing energy losses.
- High Short Circuit Withstand Time: Up to 5μs, ensuring robust operation under transient conditions.
- Wide Operating Junction Temperature Range: From -40°C to +175°C, making it suitable for various environmental conditions.
Applications
- Industrial Power Supplies: Suitable for high-power DC-DC converters and power supplies.
- Automotive Systems: Used in electric vehicles, hybrid vehicles, and other automotive power electronics.
- Renewable Energy Systems: Applicable in solar and wind power inverters and converters.
- Motor Drives: Ideal for high-performance motor control and drive systems.
- Aerospace and Aviation: With express written approval, it can be used in life-support and safety-critical systems.
Q & A
- What is the collector-emitter voltage of the IKW50N60TFKSA1 IGBT?
The collector-emitter voltage is 600V.
- What is the maximum collector current of the IKW50N60TFKSA1 at 25°C?
The maximum collector current is 50A.
- What is the power dissipation capability of the IKW50N60TFKSA1?
The power dissipation is 333W.
- Does the IKW50N60TFKSA1 have an integrated anti-parallel diode?
Yes, it features an integrated anti-parallel diode.
- What is the typical collector-emitter saturation voltage of the IKW50N60TFKSA1?
The typical collector-emitter saturation voltage is 1.5V.
- What is the turn-on delay time of the IKW50N60TFKSA1?
The turn-on delay time is 26ns.
- What is the operating junction temperature range of the IKW50N60TFKSA1?
The operating junction temperature range is from -40°C to +175°C.
- What is the package style and mounting method of the IKW50N60TFKSA1?
The package style is TO-247-3, and the mounting method is through-hole.
- Can the IKW50N60TFKSA1 be used in life-support devices or systems?
Only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system.
- What is the short circuit withstand time of the IKW50N60TFKSA1?
The short circuit withstand time is up to 5μs.