IKW50N60TFKSA1
  • Share:

Infineon Technologies IKW50N60TFKSA1

Manufacturer No:
IKW50N60TFKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
IGBT TRENCH/FS 600V 80A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IKW50N60TFKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. This component is part of the TRENCHSTOP™ series, known for its advanced technology and robust performance. The IKW50N60TFKSA1 is designed for high-power applications, offering a collector-emitter voltage of 600V and a collector current of 50A. It is packaged in a TO-247-3 case and features a through-hole mounting method, making it suitable for a variety of industrial and automotive applications.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCE) 600 V
Collector Current (IC) at 25°C 50 A
Pulsed Collector Current (IC(puls)) 150 A
Power Dissipation (Ptot) 333 W
Gate-Emitter Voltage (VGE) ±20 V
Collector-Emitter Saturation Voltage (VCE(sat)) 1.5 V
Turn-on Delay Time (td(on)) 26 ns
Turn-off Delay Time (td(off)) 299 ns
Gate Charge (Qg) 310 nC
Reverse Recovery Time (trr) 143 ns
Leakage Current 100 nA
Input Capacitance 3140 pF
Operating Junction Temperature Range -40°C to +175°C °C
Number of Terminals 3
Package Style TO-247-3
Mounting Method Through Hole

Key Features

  • Advanced TRENCHSTOP™ Technology: Offers low conduction losses and high switching speeds.
  • Integrated Anti-Parallel Diode: Enhances the component's performance in inductive load applications.
  • Low Collector-Emitter Saturation Voltage (VCE(sat)): Typically 1.5V, reducing energy losses.
  • High Short Circuit Withstand Time: Up to 5μs, ensuring robust operation under transient conditions.
  • Wide Operating Junction Temperature Range: From -40°C to +175°C, making it suitable for various environmental conditions.

Applications

  • Industrial Power Supplies: Suitable for high-power DC-DC converters and power supplies.
  • Automotive Systems: Used in electric vehicles, hybrid vehicles, and other automotive power electronics.
  • Renewable Energy Systems: Applicable in solar and wind power inverters and converters.
  • Motor Drives: Ideal for high-performance motor control and drive systems.
  • Aerospace and Aviation: With express written approval, it can be used in life-support and safety-critical systems.

Q & A

  1. What is the collector-emitter voltage of the IKW50N60TFKSA1 IGBT?

    The collector-emitter voltage is 600V.

  2. What is the maximum collector current of the IKW50N60TFKSA1 at 25°C?

    The maximum collector current is 50A.

  3. What is the power dissipation capability of the IKW50N60TFKSA1?

    The power dissipation is 333W.

  4. Does the IKW50N60TFKSA1 have an integrated anti-parallel diode?

    Yes, it features an integrated anti-parallel diode.

  5. What is the typical collector-emitter saturation voltage of the IKW50N60TFKSA1?

    The typical collector-emitter saturation voltage is 1.5V.

  6. What is the turn-on delay time of the IKW50N60TFKSA1?

    The turn-on delay time is 26ns.

  7. What is the operating junction temperature range of the IKW50N60TFKSA1?

    The operating junction temperature range is from -40°C to +175°C.

  8. What is the package style and mounting method of the IKW50N60TFKSA1?

    The package style is TO-247-3, and the mounting method is through-hole.

  9. Can the IKW50N60TFKSA1 be used in life-support devices or systems?

    Only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system.

  10. What is the short circuit withstand time of the IKW50N60TFKSA1?

    The short circuit withstand time is up to 5μs.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):150 A
Vce(on) (Max) @ Vge, Ic:2V @ 15V, 50A
Power - Max:333 W
Switching Energy:2.6mJ
Input Type:Standard
Gate Charge:310 nC
Td (on/off) @ 25°C:26ns/299ns
Test Condition:400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr):143 ns
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:PG-TO247-3-1
0 Remaining View Similar

In Stock

$7.07
97

Please send RFQ , we will respond immediately.

Same Series
IKW50N60TAFKSA1
IKW50N60TAFKSA1
IGBT TRENCH/FS 600V 80A TO247-3

Similar Products

Part Number IKW50N60TFKSA1 IKW20N60TFKSA1 IKW30N60TFKSA1 IKW50N60TAFKSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Obsolete
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V 600 V
Current - Collector (Ic) (Max) 80 A 40 A 60 A 80 A
Current - Collector Pulsed (Icm) 150 A 60 A 90 A 150 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A 2.05V @ 15V, 20A 2.05V @ 15V, 30A 2V @ 15V, 50A
Power - Max 333 W 166 W 187 W 333 W
Switching Energy 2.6mJ 770µJ 1.46mJ 2.6mJ
Input Type Standard Standard Standard Standard
Gate Charge 310 nC 120 nC 167 nC 310 nC
Td (on/off) @ 25°C 26ns/299ns 18ns/199ns 23ns/254ns 26ns/299ns
Test Condition 400V, 50A, 7Ohm, 15V 400V, 20A, 12Ohm, 15V 400V, 30A, 10.6Ohm, 15V 400V, 50A, 7Ohm, 15V
Reverse Recovery Time (trr) 143 ns 41 ns 143 ns 143 ns
Operating Temperature -40°C ~ 175°C (TJ) - -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-1 PG-TO247-3-1

Related Product By Categories

STGD10HF60KD
STGD10HF60KD
STMicroelectronics
IGBT 600V 10A DPAK
STGW39NC60VD
STGW39NC60VD
STMicroelectronics
IGBT 600V 80A 250W TO247
STGD20N45LZAG
STGD20N45LZAG
STMicroelectronics
POWER TRANSISTORS
FGH75T65SQD-F155
FGH75T65SQD-F155
onsemi
IGBT 650V 150A 375W TO247
FGH75T65SHDT-F155
FGH75T65SHDT-F155
onsemi
IGBT 650V 150A 455W TO-247
NGTB50N120FL2WG
NGTB50N120FL2WG
onsemi
IGBT 1200V 100A 535W TO247
STGB6NC60HDT4
STGB6NC60HDT4
STMicroelectronics
IGBT 600V 15A 56W D2PAK
STGWA75M65DF2
STGWA75M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
STGD18N40LZT4
STGD18N40LZT4
STMicroelectronics
IGBT 420V 25A 125W DPAK
STGB10M65DF2
STGB10M65DF2
STMicroelectronics
IGBT 650V 10A D2PAK
NGB8202NT4G
NGB8202NT4G
onsemi
IGBT 440V 20A 150W D2PAK
NGD15N41CLT4G
NGD15N41CLT4G
Littelfuse Inc.
IGBT 440V 15A 107W DPAK

Related Product By Brand

BAV70UE6327
BAV70UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BCX53E6327
BCX53E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX5310E6327
BCX5310E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BC856A-E6327
BC856A-E6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC817K40WH6327XTSA1
BC817K40WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC80740WE6327BTSA1
BC80740WE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.5A SOT323
IPD60R180P7SAUMA1
IPD60R180P7SAUMA1
Infineon Technologies
MOSFET N-CH 600V 18A TO252-3
IRFP250NPBF
IRFP250NPBF
Infineon Technologies
MOSFET N-CH 200V 30A TO247AC
BSS123L7874XT
BSS123L7874XT
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3
IKW75N60TAFKSA1
IKW75N60TAFKSA1
Infineon Technologies
IGBT TRENCH/FS 600V 80A TO247-3
BTS5210LAUMA1
BTS5210LAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12
BTS5215LAUMA1
BTS5215LAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12