STGWA15M120DF3
  • Share:

STMicroelectronics STGWA15M120DF3

Manufacturer No:
STGWA15M120DF3
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
IGBT 1200V 30A 259W
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGWA15M120DF3 is a Trench gate field-stop IGBT (Insulated Gate Bipolar Transistor) developed by STMicroelectronics. This device is part of the M series IGBTs, known for their advanced proprietary trench gate field-stop structure. This technology enhances the device's performance by reducing losses and improving overall efficiency. The STGWA15M120DF3 is designed for high-voltage applications, making it suitable for various industrial and power management systems.

Key Specifications

Parameter Value
Manufacturer STMicroelectronics
Type of Transistor IGBT (Insulated Gate Bipolar Transistor)
Collector-Emitter Voltage (Vce) 1200 V
Collector Current (Ic) 15 A
Power Dissipation (Pd) 259 W
Package Type TO-247 long leads

Key Features

  • Advanced Trench Gate Field-Stop Structure: Enhances performance by reducing losses and improving efficiency.
  • High Voltage Capability: Rated for 1200 V collector-emitter voltage, making it suitable for high-voltage applications.
  • Low Loss Operation: Designed to operate efficiently within the 2 to 20 kHz frequency range, reducing energy losses.
  • High Current Handling: Capable of handling up to 15 A collector current.
  • Robust Packaging: Available in TO-247 long leads package, ensuring reliable and durable performance.

Applications

  • Industrial Power Systems: Suitable for use in industrial power supplies, motor drives, and other high-power applications.
  • Power Management Systems: Ideal for use in systems requiring efficient power management and high reliability.
  • Renewable Energy Systems: Can be used in solar and wind power systems to manage and convert energy efficiently.
  • Automotive Systems: Applicable in automotive systems that require high-voltage and high-current handling capabilities.

Q & A

  1. What is the collector-emitter voltage rating of the STGWA15M120DF3?

    The collector-emitter voltage rating is 1200 V.

  2. What is the maximum collector current of the STGWA15M120DF3?

    The maximum collector current is 15 A.

  3. What is the power dissipation of the STGWA15M120DF3?

    The power dissipation is 259 W.

  4. What type of package does the STGWA15M120DF3 come in?

    The STGWA15M120DF3 comes in a TO-247 long leads package.

  5. What is the frequency range for low loss operation of the STGWA15M120DF3?

    The device operates efficiently within the 2 to 20 kHz frequency range.

  6. What are some typical applications of the STGWA15M120DF3?

    Typical applications include industrial power systems, power management systems, renewable energy systems, and automotive systems.

  7. What technology is used in the STGWA15M120DF3?

    The device uses an advanced proprietary trench gate field-stop structure.

  8. Who is the manufacturer of the STGWA15M120DF3?

    The manufacturer is STMicroelectronics.

  9. What are the key benefits of the trench gate field-stop structure in the STGWA15M120DF3?

    The key benefits include reduced losses and improved efficiency.

  10. Is the STGWA15M120DF3 suitable for high-voltage applications?

    Yes, it is suitable for high-voltage applications due to its 1200 V collector-emitter voltage rating.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):1200 V
Current - Collector (Ic) (Max):30 A
Current - Collector Pulsed (Icm):60 A
Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 15A
Power - Max:259 W
Switching Energy:550µJ (on), 850µJ (off)
Input Type:Standard
Gate Charge:53 nC
Td (on/off) @ 25°C:26ns/122ns
Test Condition:600V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr):270 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247 Long Leads
0 Remaining View Similar

In Stock

$3.27
177

Please send RFQ , we will respond immediately.

Same Series
STGW15M120DF3
STGW15M120DF3
IGBT 1200V 30A 259W

Similar Products

Part Number STGWA15M120DF3 STGWA25M120DF3 STGWA15S120DF3 STGW15M120DF3
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
IGBT Type Trench Field Stop Trench Field Stop Trench Field Stop Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V 1200 V 1200 V
Current - Collector (Ic) (Max) 30 A 50 A 30 A 30 A
Current - Collector Pulsed (Icm) 60 A 100 A 60 A 60 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 15A 2.3V @ 15V, 25A 2.05V @ 15V, 15A 2.3V @ 15V, 15A
Power - Max 259 W 375 W 259 W 259 W
Switching Energy 550µJ (on), 850µJ (off) 850µJ (on), 1.3mJ (off) 540µJ (on), 1.38mJ (off) 550µJ (on), 850µJ (off)
Input Type Standard Standard Standard Standard
Gate Charge 53 nC 85 nC 53 nC 226 nC
Td (on/off) @ 25°C 26ns/122ns 28ns/150ns 23ns/140ns 26ns/122ns
Test Condition 600V, 15A, 22Ohm, 15V 600V, 25A, 15Ohm, 15V 600V, 15A, 22Ohm, 15V 600V, 15A, 22Ohm, 15V
Reverse Recovery Time (trr) 270 ns 265 ns 270 ns 270 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3
Supplier Device Package TO-247 Long Leads TO-247 Long Leads TO-247-3 TO-247

Related Product By Categories

ISL9V5045S3ST-F085
ISL9V5045S3ST-F085
onsemi
IGBT 480V 51A 300W D2PAK
FGH80N60FD2TU
FGH80N60FD2TU
onsemi
IGBT 600V 80A 290W TO247
STGD10HF60KD
STGD10HF60KD
STMicroelectronics
IGBT 600V 10A DPAK
FGH60T65SHD-F155
FGH60T65SHD-F155
onsemi
IGBT TRENCH/FS 650V 120A TO247
FGY75T120SQDN
FGY75T120SQDN
onsemi
IGBT 1200V 75A UFS
STGWA75M65DF2
STGWA75M65DF2
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT M SE
STGF20H60DF
STGF20H60DF
STMicroelectronics
IGBT 600V 40A 37W TO220FP
STGWT28IH125DF
STGWT28IH125DF
STMicroelectronics
IGBT 1250V 60A 375W TO-3P
STGW60H65DFB-4
STGW60H65DFB-4
STMicroelectronics
IGBT
FGH75T65UPD-F085
FGH75T65UPD-F085
onsemi
IGBT 650V 150A 375W TO-247AB
FGY75T95SQDT
FGY75T95SQDT
onsemi
IGBT 950V 75A
NGD18N45CLBT4G
NGD18N45CLBT4G
onsemi
INSULATED GATE BIPOLAR TRANSISTO

Related Product By Brand

SMA6T28CAY
SMA6T28CAY
STMicroelectronics
TVS DIODE 24VWM 44.3VC SMA
STTH60AC06CW
STTH60AC06CW
STMicroelectronics
DIODE ARRAY GP 600V 30A TO247
STPS3150UF
STPS3150UF
STMicroelectronics
DIODE SCHOTTKY 150V 3A SMBFLAT
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
SCT10N120
SCT10N120
STMicroelectronics
SICFET N-CH 1200V 12A HIP247
STA333BWJ13TR
STA333BWJ13TR
STMicroelectronics
IC FULLY INTEG PROC POWERSSO-36
STM8AF6286TCY
STM8AF6286TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 32LQFP
M27C801-100F6
M27C801-100F6
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32CDIP
VN750PSTR-E
VN750PSTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 8SO
VND7140AJ12TR-E
VND7140AJ12TR-E
STMicroelectronics
IC PWR DRVR N-CHAN 1:1 PWRSSO12
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8
LM217MDT-TR
LM217MDT-TR
STMicroelectronics
IC REG LINEAR POS ADJ 500MA DPAK