Overview
The STGWA25M120DF3 is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by STMicroelectronics. This device belongs to the M series and is characterized by its trench gate field-stop technology, which offers low losses and high efficiency. It is designed for applications requiring high voltage and current handling capabilities.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (VCE) | 1200 V |
| Current Rating (IC) | 25 A |
| Power Dissipation (PD) | 375 W |
| Package Type | Through Hole TO-247-3 |
| Switching Frequency | Up to 20 kHz |
| Gate-Emitter Threshold Voltage (VGE(th)) | 4.5 to 6.5 V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.7 V at IC = 25 A |
Key Features
- Trench gate field-stop technology for reduced losses and improved efficiency.
- High voltage and current handling capabilities.
- Low collector-emitter saturation voltage (VCE(sat)) for reduced power losses.
- High switching frequency up to 20 kHz.
- Rugged and reliable design suitable for demanding applications.
Applications
- Power conversion systems such as DC-DC converters and AC-DC converters.
- Motor drives and control systems.
- Uninterruptible Power Supplies (UPS) and power factor correction (PFC) circuits.
- Industrial power supplies and renewable energy systems.
Q & A
- What is the voltage rating of the STGWA25M120DF3 IGBT?
The voltage rating of the STGWA25M120DF3 is 1200 V. - What is the current rating of the STGWA25M120DF3 IGBT?
The current rating of the STGWA25M120DF3 is 25 A. - What package type does the STGWA25M120DF3 come in?
The STGWA25M120DF3 comes in a Through Hole TO-247-3 package. - What is the typical collector-emitter saturation voltage (VCE(sat)) of the STGWA25M120DF3?
The typical collector-emitter saturation voltage (VCE(sat)) is 1.7 V at IC = 25 A. - What are the primary applications of the STGWA25M120DF3 IGBT?
The primary applications include power conversion systems, motor drives, UPS, PFC circuits, and industrial power supplies. - What technology does the STGWA25M120DF3 use?
The STGWA25M120DF3 uses trench gate field-stop technology. - What is the maximum power dissipation of the STGWA25M120DF3?
The maximum power dissipation is 375 W. - What is the gate-emitter threshold voltage range of the STGWA25M120DF3?
The gate-emitter threshold voltage range is 4.5 to 6.5 V. - Is the STGWA25M120DF3 suitable for high-frequency applications?
Yes, it is suitable for high-frequency applications up to 20 kHz. - Where can I find detailed specifications and datasheets for the STGWA25M120DF3?
Detailed specifications and datasheets can be found on the STMicroelectronics official website, as well as on distributor websites like Digi-Key and LCSC.
