Overview
The AFGB40T65SQDN is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed by onsemi for automotive applications. This device is part of the high-speed switching series and is AEC-Q101 qualified, ensuring reliability and robustness in demanding automotive environments. It features a maximum junction temperature of 175°C and is Pb-free and RoHS compliant, making it an environmentally friendly choice.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector to Emitter Voltage | VCES | 650 | V |
| Gate-to-Emitter Voltage | VGES | ±20 | V |
| Transient Gate-to-Emitter Voltage | VGES | ±30 | V |
| Collector Current (TC = 25°C) | IC | 80 | A |
| Collector Current (TC = 100°C) | IC | 40 | A |
| Pulsed Collector Current | ICM | 160 | A |
| Maximum Power Dissipation (TC = 25°C) | PD | 238 | W |
| Maximum Power Dissipation (TC = 100°C) | PD | 119 | W |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to 175 | °C |
| Thermal Resistance Junction-to-Case (IGBT) | RθJC | 0.63 | °C/W |
| Thermal Resistance Junction-to-Case (Diode) | RθJC | 1.55 | °C/W |
| Gate Threshold Voltage | VGE(th) | 2.6 - 6.4 | V |
| Collector to Emitter Saturation Voltage (TC = 25°C) | VCE(sat) | 1.6 - 2.1 | V |
| Turn-On Delay Time (TC = 25°C) | td(on) | 17.6 | ns |
| Turn-Off Delay Time (TC = 25°C) | td(off) | 75.2 | ns |
Key Features
- High-Speed Switching Series: Designed for fast switching applications.
- AEC-Q101 Qualified: Ensures reliability and robustness in automotive environments.
- Maximum Junction Temperature of 175°C: Suitable for high-temperature applications.
- Pb-Free and RoHS Compliant: Environmentally friendly.
- Low VCE(sat): Typical collector-emitter saturation voltage of 1.6 V at IC = 40 A.
- 100% Dynamically Tested: Ensures high quality and reliability.
Applications
- Automotive On Board Charger: Suitable for charging systems in electric and hybrid vehicles.
- Automotive DC/DC Converter for HEV: Ideal for power conversion in hybrid electric vehicles.
Q & A
- What is the maximum collector-emitter voltage of the AFGB40T65SQDN?
The maximum collector-emitter voltage is 650 V.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 80 A at 25°C and 40 A at 100°C.
- What is the typical collector-emitter saturation voltage?
The typical collector-emitter saturation voltage is 1.6 V at IC = 40 A.
- Is the AFGB40T65SQDN AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified, ensuring reliability in automotive applications.
- What is the maximum junction temperature of the AFGB40T65SQDN?
The maximum junction temperature is 175°C.
- Is the AFGB40T65SQDN Pb-free and RoHS compliant?
Yes, it is Pb-free and RoHS compliant.
- What are the typical applications of the AFGB40T65SQDN?
Typical applications include automotive on-board chargers and automotive DC/DC converters for hybrid electric vehicles.
- What is the thermal resistance junction-to-case for the IGBT?
The thermal resistance junction-to-case for the IGBT is 0.63 °C/W.
- What is the turn-on delay time at 25°C?
The turn-on delay time at 25°C is 17.6 ns.
- What is the turn-off delay time at 25°C?
The turn-off delay time at 25°C is 75.2 ns.
