FGHL75T65MQDT
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onsemi FGHL75T65MQDT

Manufacturer No:
FGHL75T65MQDT
Manufacturer:
onsemi
Package:
Tube
Description:
FS4 MID SPEED IGBT 650V 75A TO24
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGHL75T65MQDT is a Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) produced by onsemi. This device is part of the 4th generation mid-speed IGBT technology and is copacked with a full-rated current diode. It is designed to offer high performance and reliability in various power conversion applications.

The IGBT features a maximum collector-emitter voltage of 650 V and a maximum collector current of 75 A at 100°C. It is known for its low saturation voltage, smooth and optimized switching characteristics, and tight parameter distribution, making it suitable for demanding applications.

Key Specifications

Rating Symbol Value Unit
Collector-to-Emitter Voltage VCES 650 V
Gate-to-Emitter Voltage VGES ±20 / ±30 (Transient) V
Collector Current @ TC = 25°C / 100°C IC 80 A / 75 A A
Pulsed Collector Current ILM / ICM 300 A A
Diode Forward Current @ TC = 25°C / 100°C IF 80 A / 75 A A
Pulsed Diode Maximum Forward Current IFM 300 A A
Maximum Power Dissipation @ TC = 25°C / 100°C PD 375 W / 188 W W
Operating Junction and Storage Temperature Range TJ, TSTG −55 to +175°C °C
Maximum Lead Temperature for Soldering TL 260°C °C
Thermal Resistance Junction-to-Case (IGBT/Diode) RJC 0.40°C/W / 0.60°C/W °C/W
Thermal Resistance Junction-to-Ambient RJA 40°C/W °C/W

Key Features

  • Maximum Junction Temperature: TJ = 175°C
  • Positive Temperature Coefficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(Sat) = 1.45 V (Typ.) @ IC = 75 A
  • 100% of the Parts are Tested for ILM
  • Smooth and Optimized Switching
  • Tight Parameter Distribution
  • RoHS Compliant

Applications

  • Solar Inverter
  • UPS (Uninterruptible Power Supply)
  • ESS (Energy Storage Systems)
  • PFC (Power Factor Correction) and Converters

Q & A

  1. What is the maximum collector-emitter voltage of the FGHL75T65MQDT?

    The maximum collector-emitter voltage is 650 V.

  2. What is the maximum collector current at 100°C?

    The maximum collector current at 100°C is 75 A.

  3. What is the typical saturation voltage at 75 A?

    The typical saturation voltage at 75 A is 1.45 V.

  4. What are the typical applications of the FGHL75T65MQDT?

    Typical applications include solar inverters, UPS, ESS, and PFC converters.

  5. Is the FGHL75T65MQDT RoHS compliant?

    Yes, the FGHL75T65MQDT is RoHS compliant.

  6. What is the thermal resistance junction-to-case for the IGBT and diode?

    The thermal resistance junction-to-case for the IGBT is 0.40°C/W and for the diode is 0.60°C/W.

  7. What is the maximum lead temperature for soldering?

    The maximum lead temperature for soldering is 260°C.

  8. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is −55 to +175°C.

  9. Does the FGHL75T65MQDT come with a built-in diode?

    Yes, the FGHL75T65MQDT is copacked with a full-rated current diode.

  10. What is the package type of the FGHL75T65MQDT?

    The package type is TO-247-3L.

Product Attributes

IGBT Type:Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):650 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):300 A
Vce(on) (Max) @ Vge, Ic:1.8V @ 15V, 75A
Power - Max:375 W
Switching Energy:2.35mJ (on), 1.25mJ (off)
Input Type:Standard
Gate Charge:149 nC
Td (on/off) @ 25°C:24ns/118ns
Test Condition:400V, 75A, 4.7Ohm, 15V
Reverse Recovery Time (trr):107 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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