FGH40N60SMDF
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onsemi FGH40N60SMDF

Manufacturer No:
FGH40N60SMDF
Manufacturer:
onsemi
Package:
Tube
Description:
IGBT FIELD STOP 600V 80A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGH40N60SMDF is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by ON Semiconductor. This device utilizes novel Field Stop IGBT technology, offering optimal performance for various applications that require low conduction and switching losses. It is particularly suited for solar inverters, UPS systems, welders, telecom equipment, Energy Storage Systems (ESS), and Power Factor Correction (PFC) applications.

Key Specifications

Parameter Symbol Value Unit
Maximum Collector to Emitter Voltage VCES 600 V
Maximum Gate to Emitter Voltage VGES ±20 V
Maximum Collector Current at TC = 25°C IC 80 A
Maximum Collector Current at TC = 100°C IC 40 A
Pulsed Collector Current at TC = 25°C ICM 120 A
Maximum Power Dissipation at TC = 25°C PD 349 W
Maximum Power Dissipation at TC = 100°C PD 174 W
Operating Junction Temperature TJ -55 to +175 °C
Storage Temperature Range TSTG -55 to +175 °C
Collector to Emitter Saturation Voltage (Typ.) VCE(sat) 1.9 V @ IC = 40 A
Gate to Emitter Threshold Voltage VGE(th) 3.5 to 6.0 V
Rise Time (Typ.) tr 20 ns
Fall Time (Typ.) tf 13 to 20 ns
Thermal Resistance, Junction to Case (IGBT) RJC 0.43 °C/W
Thermal Resistance, Junction to Ambient RJA 40 °C/W

Key Features

  • High Current Capability: The FGH40N60SMDF can handle a maximum collector current of 80 A at TC = 25°C and 40 A at TC = 100°C.
  • Low Saturation Voltage: A typical collector to emitter saturation voltage of 1.9 V at IC = 40 A, reducing conduction losses.
  • Fast Switching: Fast switching times with a turn-off switching loss of 6.5 μJ/A, enhancing efficiency in high-frequency applications.
  • Positive Temperature Coefficient: Facilitates easy parallel operation due to its positive temperature coefficient.
  • High Input Impedance: Ensures stable operation and reduces the risk of unwanted switching.
  • Tightened Parameter Distribution: Consistent performance across devices.
  • Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.

Applications

  • Solar Inverters: Ideal for solar power conversion systems due to its low conduction and switching losses.
  • UPS Systems: Suitable for uninterruptible power supply systems requiring high reliability and efficiency.
  • Welders: Used in welding equipment for high current handling and fast switching capabilities.
  • Telecom Equipment: Applicable in telecommunications for power management and conversion.
  • Energy Storage Systems (ESS): Utilized in ESS for efficient power storage and release.
  • Power Factor Correction (PFC): Employed in PFC circuits to improve power factor and reduce harmonic distortion.
  • Automotive Chargers and Converters: Qualified for automotive applications, including high voltage auxiliaries.

Q & A

  1. What is the maximum collector to emitter voltage of the FGH40N60SMDF IGBT?

    The maximum collector to emitter voltage is 600 V.

  2. What is the maximum collector current at TC = 25°C and TC = 100°C?

    The maximum collector current is 80 A at TC = 25°C and 40 A at TC = 100°C.

  3. What is the typical collector to emitter saturation voltage at IC = 40 A?

    The typical collector to emitter saturation voltage is 1.9 V at IC = 40 A.

  4. What are the thermal resistance values for junction to case and junction to ambient?

    The thermal resistance from junction to case (IGBT) is 0.43 °C/W, and from junction to ambient is 40 °C/W.

  5. What are the typical rise and fall times for the FGH40N60SMDF IGBT?

    The typical rise time is 20 ns, and the typical fall time is 13 to 20 ns.

  6. Is the FGH40N60SMDF IGBT environmentally compliant?

    Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  7. What is the maximum operating junction temperature of the FGH40N60SMDF IGBT?

    The maximum operating junction temperature is 175°C.

  8. What are some common applications of the FGH40N60SMDF IGBT?

    Common applications include solar inverters, UPS systems, welders, telecom equipment, ESS, and PFC circuits.

  9. What is the package type of the FGH40N60SMDF IGBT?

    The package type is TO-247-3LD.

  10. Does the FGH40N60SMDF IGBT have a positive temperature coefficient?

    Yes, it has a positive temperature coefficient, which facilitates easy parallel operation.

Product Attributes

IGBT Type:Field Stop
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):80 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.5V @ 15V, 40A
Power - Max:349 W
Switching Energy:1.3mJ (on), 260µJ (off)
Input Type:Standard
Gate Charge:119 nC
Td (on/off) @ 25°C:12ns/92ns
Test Condition:400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr):90 ns
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number FGH40N60SMDF FGH40N60SMD
Manufacturer onsemi onsemi
Product Status Active Active
IGBT Type Field Stop Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 80 A 80 A
Current - Collector Pulsed (Icm) 120 A 120 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A 2.5V @ 15V, 40A
Power - Max 349 W 349 W
Switching Energy 1.3mJ (on), 260µJ (off) 870µJ (on), 260µJ (off)
Input Type Standard Standard
Gate Charge 119 nC 119 nC
Td (on/off) @ 25°C 12ns/92ns 12ns/92ns
Test Condition 400V, 40A, 6Ohm, 15V 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 90 ns 36 ns
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3

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