FGY120T65SPD-F085
  • Share:

onsemi FGY120T65SPD-F085

Manufacturer No:
FGY120T65SPD-F085
Manufacturer:
onsemi
Package:
Bulk
Description:
IGBT, 650V, 120A FIELD STOP, TRE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FGY120T65SPD-F085 is a high-performance Insulated Gate Bipolar Transistor (IGBT) chip manufactured by onsemi. This component is designed for automotive applications and is known for its low saturation voltage and high current handling capabilities. It is AEC-Q101 qualified, ensuring it meets stringent automotive standards for reliability and performance.

Key Specifications

ParameterValue
Maximum Collector-Emitter Voltage (Vce)650 V
Maximum Continuous Collector Current (Ic)240 A
Saturation Voltage (Vce(sat))1.5 V (Typ.) @ Ic = 120 A
Maximum Junction Temperature (Tj)175°C
Package/CaseTO-247
Pins3+Tab

Key Features

  • Very low saturation voltage: Vce(sat) = 1.5 V (Typ.) @ Ic = 120 A, reducing power losses.
  • High current handling capability: up to 240 A continuous collector current.
  • Maximum junction temperature of 175°C, ensuring reliable operation in high-temperature environments.
  • AEC-Q101 qualified, meeting automotive industry standards for reliability and performance.
  • Positive temperature coefficient, which helps in preventing thermal runaway.

Applications

The FGY120T65SPD-F085 IGBT is primarily used in automotive applications, including but not limited to:

  • Electric and hybrid electric vehicles.
  • Automotive power conversion systems.
  • High-power motor drives.
  • Power management systems in vehicles.

Q & A

  1. What is the maximum collector-emitter voltage of the FGY120T65SPD-F085?
    The maximum collector-emitter voltage is 650 V.
  2. What is the typical saturation voltage of this IGBT?
    The typical saturation voltage is 1.5 V at Ic = 120 A.
  3. What is the maximum junction temperature for this component?
    The maximum junction temperature is 175°C.
  4. Is the FGY120T65SPD-F085 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified.
  5. What is the package type of the FGY120T65SPD-F085?
    The package type is TO-247 with 3+Tab pins.
  6. What are the primary applications of the FGY120T65SPD-F085?
    The primary applications include electric and hybrid electric vehicles, automotive power conversion systems, high-power motor drives, and power management systems in vehicles.
  7. What is the continuous collector current rating of this IGBT?
    The continuous collector current rating is up to 240 A.
  8. Does the FGY120T65SPD-F085 have a positive temperature coefficient?
    Yes, it has a positive temperature coefficient.
  9. Why is the low saturation voltage important in this IGBT?
    The low saturation voltage reduces power losses, making the component more efficient.
  10. Who manufactures the FGY120T65SPD-F085?
    The FGY120T65SPD-F085 is manufactured by onsemi.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):- 
Current - Collector (Ic) (Max):- 
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:- 
Power - Max:- 
Switching Energy:- 
Input Type:- 
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$8.16
79

Please send RFQ , we will respond immediately.

Similar Products

Part Number FGY120T65SPD-F085 FGY160T65SPD-F085
Manufacturer onsemi onsemi
Product Status Active Active
IGBT Type - Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) - 650 V
Current - Collector (Ic) (Max) - 240 A
Current - Collector Pulsed (Icm) - 480 A
Vce(on) (Max) @ Vge, Ic - 2.05V @ 15V, 160A
Power - Max - 882 W
Switching Energy - 12.4mJ (on), 5.7mJ (off)
Input Type - Standard
Gate Charge - -
Td (on/off) @ 25°C - 53ns/98ns
Test Condition - 400V, 160A, 15V
Reverse Recovery Time (trr) - 132 ns
Operating Temperature - -55°C ~ 175°C (TJ)
Mounting Type - Through Hole
Package / Case - TO-247-3
Supplier Device Package - TO-247-3

Related Product By Categories

FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
FGA60N65SMD
FGA60N65SMD
onsemi
IGBT FIELD STOP 650V 120A TO3P
ISL9V3040P3
ISL9V3040P3
onsemi
IGBT 430V 21A TO220-3
STGW40H65DFB-4
STGW40H65DFB-4
STMicroelectronics
IGBT
STGB10NC60KDT4
STGB10NC60KDT4
STMicroelectronics
IGBT 600V 20A 65W D2PAK
STGB14NC60KDT4
STGB14NC60KDT4
STMicroelectronics
IGBT 600V 25A 80W D2PAK
STGD25N40LZAG
STGD25N40LZAG
STMicroelectronics
POWER TRANSISTORS
FGH15T120SMD-F155
FGH15T120SMD-F155
onsemi
IGBT 1200V 30A 333W TO247-3
STGYA75H120DF2
STGYA75H120DF2
STMicroelectronics
TRENCH GATE FIELD-STOP 1200 V, 7
FGL60N100BNTDTU
FGL60N100BNTDTU
onsemi
IGBT 1000V 60A 180W TO264
NGD15N41CLT4G
NGD15N41CLT4G
Littelfuse Inc.
IGBT 440V 15A 107W DPAK
STGB10NB37LZ
STGB10NB37LZ
STMicroelectronics
IGBT 440V 20A 125W D2PAK

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN