Overview
The FGH40N60SMD is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This device utilizes novel field stop IGBT technology, offering optimal performance for various applications requiring low conduction and switching losses. It is designed for use in solar inverters, UPS, welders, telecom, Energy Storage Systems (ESS), and Power Factor Correction (PFC) applications. The IGBT features a maximum junction temperature of 175°C and is RoHS compliant, making it suitable for a wide range of industrial and automotive applications.
Key Specifications
| Parameter | Symbol | Unit | Typical/Maximum Value |
|---|---|---|---|
| Collector to Emitter Voltage | VCES | V | 600 V |
| Gate to Emitter Voltage | VGES | V | ±20 V |
| Collector Current at TC = 25°C | IC | A | 80 A |
| Collector Current at TC = 100°C | IC | A | 40 A |
| Pulsed Collector Current | ICM | A | 120 A |
| Maximum Power Dissipation at TC = 25°C | PD | W | 349 W |
| Maximum Power Dissipation at TC = 100°C | PD | W | 174 W |
| Operating Junction Temperature | TJ | °C | -55 to +175 °C |
| Collector-Emitter Saturation Voltage | VCE(sat) | V | 1.9 V @ IC = 40 A |
| Thermal Resistance, Junction to Case | RJC | °C/W | 0.43 °C/W |
| Package Type | TO-247-3LD |
Key Features
- High Current Capability: Up to 80 A at TC = 25°C and 40 A at TC = 100°C.
- Low Saturation Voltage: VCE(sat) = 1.9 V (Typ) @ IC = 40 A.
- Positive Temperature Coefficient: For easy parallel operation.
- High Input Impedance: Enhancing control and stability.
- Fast Switching: Low turn-on and turn-off switching losses.
- Tightened Parameter Distribution: Ensuring consistent performance across devices.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive applications.
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Environmentally friendly.
Applications
- Solar Inverters
- UPS (Uninterruptible Power Supplies)
- Welders
- Telecom
- Energy Storage Systems (ESS)
- Power Factor Correction (PFC)
- Automotive Chargers and Converters
- High Voltage Auxiliaries
- Inverters and Switch-Mode Power Supplies (SMPS)
Q & A
- What is the maximum collector-emitter voltage of the FGH40N60SMD IGBT?
The maximum collector-emitter voltage (VCES) is 600 V.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 80 A at TC = 25°C and 40 A at TC = 100°C.
- What is the typical collector-emitter saturation voltage?
The typical collector-emitter saturation voltage (VCE(sat)) is 1.9 V @ IC = 40 A.
- What is the thermal resistance from junction to case?
The thermal resistance from junction to case (RJC) is 0.43 °C/W.
- Is the FGH40N60SMD IGBT RoHS compliant?
Yes, the FGH40N60SMD IGBT is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What are the typical applications of the FGH40N60SMD IGBT?
Typical applications include solar inverters, UPS, welders, telecom, ESS, PFC, and automotive chargers.
- What is the maximum junction temperature of the FGH40N60SMD IGBT?
The maximum junction temperature (TJ) is 175°C.
- What is the package type of the FGH40N60SMD IGBT?
The package type is TO-247-3LD.
- Does the FGH40N60SMD IGBT have AEC-Q101 qualification?
Yes, the FGH40N60SMD IGBT is AEC-Q101 qualified and PPAP capable.
- What are the switching characteristics of the FGH40N60SMD IGBT?
The IGBT has fast switching characteristics with turn-on and turn-off delays, rise and fall times, and low switching losses.
