Overview
The FGA50T65SHD is a 650 V, 50 A Field Stop Trench IGBT produced by ON Semiconductor. This third-generation IGBT utilizes novel field stop technology to offer optimal performance in various applications. It is designed to provide low conduction and switching losses, making it suitable for high-efficiency power systems. The device features a high current capability, positive temperature coefficient for easy parallel operation, and high input impedance. It is also RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|
| Collector to Emitter Voltage (VCES) | V | - | - | 650 |
| Gate to Emitter Voltage (VGES) | V | - | - | ±20 |
| Transient Gate to Emitter Voltage | V | - | - | ±30 |
| Collector Current (IC) @ TC = 25°C | A | - | - | 100 |
| Collector Current (IC) @ TC = 100°C | A | - | - | 50 |
| Pulsed Collector Current (ICM) @ TC = 25°C | A | - | - | 150 |
| Diode Forward Current (IF) @ TC = 25°C | A | - | - | 60 |
| Diode Forward Current (IF) @ TC = 100°C | A | - | - | 30 |
| Pulsed Diode Maximum Forward Current (IFM) | A | - | - | 150 |
| Saturation Voltage (VCE(sat)) @ IC = 50 A | V | - | 1.6 | - |
| Thermal Resistance, Junction to Case (RθJC(IGBT)) | °C/W | - | - | 0.47 |
| Thermal Resistance, Junction to Ambient (RθJA) | °C/W | - | - | 40 |
| Maximum Junction Temperature (TJ) | °C | - | - | 175 |
Key Features
- High Current Capability: The IGBT can handle up to 100 A of collector current at 25°C and 50 A at 100°C.
- Low Saturation Voltage: A typical saturation voltage of 1.6 V at 50 A, reducing conduction losses.
- Positive Temperature Co-efficient: Facilitates easy parallel operation.
- High Input Impedance: Ensures stable operation and reduces the risk of unintended switching.
- Fast Switching: Optimized for high-speed switching applications.
- Tight Parameter Distribution: Consistent performance across devices.
- RoHS Compliant: Environmentally friendly design.
Applications
- Solar Inverters: Ideal for high-efficiency solar power conversion systems.
- UPS (Uninterruptible Power Supplies): Ensures reliable power supply in critical systems.
- Welders: Suitable for high-current welding applications.
- Telecom: Used in telecommunications equipment for efficient power management.
- ESS (Energy Storage Systems): Supports efficient energy storage and release.
- PFC (Power Factor Correction): Improves power factor in various power systems.
Q & A
- What is the maximum collector to emitter voltage of the FGA50T65SHD IGBT?
The maximum collector to emitter voltage (VCES) is 650 V.
- What is the maximum collector current at 25°C and 100°C?
The maximum collector current is 100 A at 25°C and 50 A at 100°C.
- What is the typical saturation voltage of the FGA50T65SHD?
The typical saturation voltage (VCE(sat)) is 1.6 V at 50 A.
- What is the maximum junction temperature of the device?
The maximum junction temperature (TJ) is 175°C.
- Is the FGA50T65SHD RoHS compliant?
Yes, the FGA50T65SHD is RoHS compliant.
- What are the typical applications of the FGA50T65SHD IGBT?
The device is typically used in solar inverters, UPS, welders, telecom, ESS, and PFC applications.
- What is the thermal resistance from junction to case (RθJC) for the IGBT?
The thermal resistance from junction to case (RθJC) is 0.47 °C/W.
- What is the thermal resistance from junction to ambient (RθJA) for the IGBT?
The thermal resistance from junction to ambient (RθJA) is 40 °C/W.
- What is the package type of the FGA50T65SHD?
The package type is TO-3PN.
- Does the FGA50T65SHD have a co-packaged diode?
Yes, the FGA50T65SHD includes a co-packaged diode.
