SGB8206ANTF4G
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onsemi SGB8206ANTF4G

Manufacturer No:
SGB8206ANTF4G
Manufacturer:
onsemi
Package:
Bulk
Description:
IGBT 20A, 350V, N-CHANNEL
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SGB8206ANTF4G is a high-performance Insulated Gate Bipolar Transistor (IGBT) produced by onsemi. This component is designed for high-power applications requiring efficient switching and reliable operation. The SGB8206ANTF4G is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package, making it suitable for a variety of industrial and automotive systems.

Key Specifications

ParameterValue
Voltage - Collector Emitter Breakdown (Max)390 V
Current - Collector (Ic) (Max)20 A
Vce(on) (Max) @ Vge, Ic1.9 V @ 4.5 V, 20 A
Power - Max150 W
Input TypeLogic
Mounting TypeSurface Mount
PackageTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Key Features

  • High voltage and current handling capabilities, with a maximum collector-emitter breakdown voltage of 390 V and a maximum collector current of 20 A.
  • Low Vce(on) of 1.9 V at 4.5 V gate voltage and 20 A collector current, ensuring efficient operation.
  • High power rating of 150 W, suitable for demanding applications.
  • Logic-level input, facilitating easy integration with control circuits.
  • Surface mount packaging in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, which is compact and easy to install.

Applications

The SGB8206ANTF4G IGBT is versatile and can be used in various high-power applications, including:

  • Industrial power supplies and motor drives.
  • Automotive systems such as electric vehicle charging, battery management, and traction control.
  • Renewable energy systems, including solar and wind power inverters.
  • Power factor correction (PFC) circuits and DC-DC converters.

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the SGB8206ANTF4G?
    The maximum collector-emitter breakdown voltage is 390 V.
  2. What is the maximum collector current of the SGB8206ANTF4G?
    The maximum collector current is 20 A.
  3. What is the Vce(on) at 4.5 V gate voltage and 20 A collector current?
    The Vce(on) is 1.9 V at 4.5 V gate voltage and 20 A collector current.
  4. What is the power rating of the SGB8206ANTF4G?
    The power rating is 150 W.
  5. What type of input does the SGB8206ANTF4G have?
    The SGB8206ANTF4G has a logic-level input.
  6. What type of packaging does the SGB8206ANTF4G use?
    The SGB8206ANTF4G is packaged in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB surface mount package.
  7. What are some common applications for the SGB8206ANTF4G?
    Common applications include industrial power supplies, automotive systems, renewable energy systems, and power factor correction circuits.
  8. Is the SGB8206ANTF4G suitable for high-power industrial applications?
    Yes, the SGB8206ANTF4G is designed for high-power industrial applications due to its high voltage and current handling capabilities.
  9. Can the SGB8206ANTF4G be used in automotive systems?
    Yes, it can be used in various automotive systems such as electric vehicle charging and traction control.
  10. What is the advantage of the logic-level input in the SGB8206ANTF4G?
    The logic-level input facilitates easy integration with control circuits, making it simpler to control the IGBT.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):390 V
Current - Collector (Ic) (Max):20 A
Current - Collector Pulsed (Icm):- 
Vce(on) (Max) @ Vge, Ic:1.9V @ 4.5V, 20A
Power - Max:150 W
Switching Energy:- 
Input Type:Logic
Gate Charge:- 
Td (on/off) @ 25°C:- 
Test Condition:- 
Reverse Recovery Time (trr):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
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