Overview
The FGH40N60SFDTU-F085 is a Field Stop Insulated Gate Bipolar Transistor (IGBT) produced by onsemi (formerly Fairchild Semiconductor). This device is designed using novel Field Stop IGBT technology, offering optimal performance for applications requiring low conduction and switching losses. It is particularly suited for automotive chargers, inverters, and other high-voltage auxiliary systems. The IGBT is qualified to meet the stringent automotive requirements of AEC-Q101 and is Pb-free and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector to Emitter Voltage | VCES | 600 | V |
| Gate to Emitter Voltage | VGES | ±20 | V |
| Transient Gate-to-Emitter Voltage | ±30 | V | |
| Collector Current at TC = 25°C | IC | 80 | A |
| Collector Current at TC = 100°C | IC | 40 | A |
| Pulsed Collector Current | ICM | 120 | A |
| Maximum Power Dissipation at TC = 25°C | PD | 290 | W |
| Operating Junction Temperature | TJ | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RθJC | 0.43 | °C/W |
| Collector to Emitter Saturation Voltage | VCE(sat) | 2.3 (Typ.) @ IC = 40 A, VGE = 15 V | V |
Key Features
- High Current Capability: Up to 80 A at TC = 25°C and 40 A at TC = 100°C.
- Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A, VGE = 15 V.
- High Input Impedance: Ensures efficient gate control.
- Fast Switching: Low turn-on and turn-off delay times.
- AEC-Q101 Qualified: Meets automotive requirements for reliability and performance.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
Applications
- Automotive Chargers and Converters: Ideal for high-voltage auxiliary systems in vehicles.
- Inverters and Power Factor Correction (PFC): Suitable for applications requiring high efficiency and low losses.
- Uninterruptible Power Supplies (UPS): Ensures reliable operation in critical power supply systems.
- High Voltage Auxiliaries: Used in various high-voltage applications requiring robust and efficient switching.
Q & A
- What is the maximum collector to emitter voltage of the FGH40N60SFDTU-F085?
The maximum collector to emitter voltage (VCES) is 600 V.
- What is the typical collector to emitter saturation voltage at 40 A?
The typical collector to emitter saturation voltage (VCE(sat)) at 40 A and VGE = 15 V is 2.3 V.
- Is the FGH40N60SFDTU-F085 qualified for automotive applications?
- What is the thermal resistance from junction to case for this IGBT?
The thermal resistance from junction to case (RθJC) is 0.43 °C/W.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time (td(on)) is 21 ns, and the typical turn-off delay time (td(off)) is 138 ns at TC = 25°C.
- What is the maximum operating junction temperature?
The maximum operating junction temperature (TJ) is +150°C.
- Is the FGH40N60SFDTU-F085 Pb-free and RoHS compliant?
- What are some common applications for this IGBT?
- What is the maximum power dissipation at TC = 25°C?
The maximum power dissipation (PD) at TC = 25°C is 290 W.
- What is the typical gate to emitter threshold voltage?
The typical gate to emitter threshold voltage (VGE(th)) is 4.7 V.
