Overview
The NGD8201ANT4G is a 20 A, 400 V N-Channel Ignition IGBT produced by Littelfuse Inc. This Insulated Gate Bipolar Transistor (IGBT) is designed for high-voltage and high-current switching applications, particularly in automotive systems such as coil-on-plug and driver-on-coil ignition systems. The device features a DPAK package, offering a smaller footprint for increased board space efficiency. It is known for its robust performance, including integrated ESD protection, temperature-compensated gate-collector voltage clamp, and high pulsed current capability.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCE | 440 | V |
Gate-Emitter Voltage | VGE | ±15 | V |
Continuous Collector Current at TC = 25°C | IC | 20 | A |
Pulsed Collector Current | IC | 50 | A |
Gate Current | IG | 1.0 | mA |
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) | IG | 20 | mA |
Total Power Dissipation at TC = 25°C | Pd | 125 | W |
Operating and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
Thermal Resistance, Junction to Case | RθJC | 1.3 | °C/W |
Thermal Resistance, Junction to Ambient (DPAK) | RθJA | 95 | °C/W |
Key Features
- Integrated ESD and over-voltage clamped protection for robust operation in inductive coil drivers.
- Temperature-compensated gate-collector voltage clamp to limit stress applied to the load.
- Low threshold voltage for easy interfacing with logic or microprocessor devices.
- Low saturation voltage and high pulsed current capability.
- Emitter ballasting for short-circuit capability.
- Pb-free device, compliant with environmental regulations.
- DPAK package offers a smaller footprint, increasing board space efficiency.
- High unclamped inductive switching (UIS) energy per area.
Applications
The NGD8201ANT4G is primarily used in automotive ignition systems, including coil-on-plug and driver-on-coil applications. It is also suitable for direct fuel injection systems and any application requiring high-voltage and high-current switching.
Q & A
- What is the maximum collector-emitter voltage of the NGD8201ANT4G?
The maximum collector-emitter voltage (VCE) is 440 V.
- What is the continuous collector current rating at 25°C?
The continuous collector current (IC) is 20 A at 25°C.
- What is the total power dissipation at 25°C?
The total power dissipation (Pd) is 125 W at 25°C.
- What is the operating temperature range of the NGD8201ANT4G?
The operating and storage temperature range is -55°C to +175°C.
- Does the NGD8201ANT4G have integrated ESD protection?
- What package type is the NGD8201ANT4G available in?
The device is available in a DPAK package.
- Is the NGD8201ANT4G Pb-free?
- What are some typical applications of the NGD8201ANT4G?
Typical applications include coil-on-plug and driver-on-coil ignition systems, and direct fuel injection systems.
- What is the thermal resistance from junction to case (RθJC) of the NGD8201ANT4G?
The thermal resistance from junction to case (RθJC) is 1.3 °C/W.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 275°C for 1/8” from the case for 5 seconds.