STGD19N40LZ
  • Share:

STMicroelectronics STGD19N40LZ

Manufacturer No:
STGD19N40LZ
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 20V 40A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STGD19N40LZ is an automotive-grade Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. This component is designed using advanced PowerMESH™ technology and features an internally clamped structure with built-in Zener diodes between the gate and collector. It is optimized for high-performance applications requiring low losses and high reliability.

Key Specifications

ParameterValue
Voltage Rating (VCE)390 V
Current Rating (IC)40 A
Package TypeTO-247 long leads
Thermal Resistance (Rth(j-c))Low thermal resistance
Energy Capability180 mJ
TechnologyAdvanced proprietary trench gate field stop structure

Key Features

  • Automotive-grade reliability and performance
  • Internally clamped IGBT with built-in Zener diodes between gate-collector
  • Low-loss operation due to advanced PowerMESH™ technology
  • Low thermal resistance for efficient heat dissipation
  • High energy capability of 180 mJ
  • TO-247 long leads package for ease of use in various applications

Applications

The STGD19N40LZ IGBT is suitable for a variety of high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and automotive power supplies
  • Industrial power supplies and motor drives
  • Renewable energy systems like solar and wind power inverters
  • High-power switching and power conversion systems

Q & A

  1. What is the voltage rating of the STGD19N40LZ IGBT?
    The voltage rating of the STGD19N40LZ IGBT is 390 V.
  2. What is the current rating of the STGD19N40LZ IGBT?
    The current rating of the STGD19N40LZ IGBT is 40 A.
  3. What package type does the STGD19N40LZ come in?
    The STGD19N40LZ comes in a TO-247 long leads package.
  4. What technology is used in the STGD19N40LZ?
    The STGD19N40LZ uses advanced PowerMESH™ technology and a proprietary trench gate field stop structure.
  5. What is the thermal resistance of the STGD19N40LZ?
    The STGD19N40LZ has low thermal resistance for efficient heat dissipation.
  6. What is the energy capability of the STGD19N40LZ?
    The energy capability of the STGD19N40LZ is 180 mJ.
  7. What are some typical applications for the STGD19N40LZ?
    The STGD19N40LZ is used in automotive systems, industrial power supplies, renewable energy systems, and high-power switching and power conversion systems.
  8. Is the STGD19N40LZ automotive-grade?
    Yes, the STGD19N40LZ is an automotive-grade IGBT.
  9. What are the built-in features of the STGD19N40LZ?
    The STGD19N40LZ has built-in Zener diodes between the gate and collector.
  10. Where can I find detailed specifications for the STGD19N40LZ?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component suppliers like Mouser Electronics.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):390 V
Current - Collector (Ic) (Max):25 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:1.5V @ 4.5V, 10A
Power - Max:125 W
Switching Energy:- 
Input Type:Logic
Gate Charge:17 nC
Td (on/off) @ 25°C:650ns/13.5µs
Test Condition:300V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

$2.48
121

Please send RFQ , we will respond immediately.

Related Product By Categories

FGH40N60SMDF
FGH40N60SMDF
onsemi
IGBT FIELD STOP 600V 80A TO247-3
STGD3NB60SDT4
STGD3NB60SDT4
STMicroelectronics
IGBT 600V 6A 48W DPAK
STGB10NC60KDT4
STGB10NC60KDT4
STMicroelectronics
IGBT 600V 20A 65W D2PAK
STGB10NC60HDT4
STGB10NC60HDT4
STMicroelectronics
IGBT 600V 20A 65W D2PAK
NGTB40N120FL3WG
NGTB40N120FL3WG
onsemi
IGBT 1200V 160A TO247
FGY75T120SQDN
FGY75T120SQDN
onsemi
IGBT 1200V 75A UFS
STGB6NC60HDT4
STGB6NC60HDT4
STMicroelectronics
IGBT 600V 15A 56W D2PAK
STGWA40H65DFB
STGWA40H65DFB
STMicroelectronics
IGBT TRENCH 650V 80A TO247
STGW60H65DFB-4
STGW60H65DFB-4
STMicroelectronics
IGBT
FGA6065ADF
FGA6065ADF
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
STGWA60H65DFB
STGWA60H65DFB
STMicroelectronics
IGBT BIPO 650V 60A TO247-3
FGH40T65SQD_F155
FGH40T65SQD_F155
onsemi
650V FS4 TRENCH IGBT

Related Product By Brand

ESDA6V1-5SC6Y
ESDA6V1-5SC6Y
STMicroelectronics
TVS DIODE 5.2VWM 11.4VC SOT23-6
STW18NM60ND
STW18NM60ND
STMicroelectronics
MOSFET N-CH 600V 13A TO247
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
STP6NK90ZFP
STP6NK90ZFP
STMicroelectronics
MOSFET N-CH 900V 5.8A TO220FP
SCTWA90N65G2V
SCTWA90N65G2V
STMicroelectronics
SILICON CARBIDE POWER MOSFET 650
STM32L4A6QGI6P
STM32L4A6QGI6P
STMicroelectronics
IC MCU 32BIT 1MB FLASH 132UFBGA
ST232BD
ST232BD
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
M74HC04RM13TR
M74HC04RM13TR
STMicroelectronics
IC INVERTER 6CH 1-INP 14SO
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
VN5E025AJ-E
VN5E025AJ-E
STMicroelectronics
IC PWR SWTCH N-CHAN 1:1 PWRSSO12
L7915CP
L7915CP
STMicroelectronics
IC REG LINEAR -15V 1.5A TO220FP
PSD813F2A-90M
PSD813F2A-90M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP