STGD19N40LZ
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STMicroelectronics STGD19N40LZ

Manufacturer No:
STGD19N40LZ
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
IGBT 20V 40A DPAK
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The STGD19N40LZ is an automotive-grade Insulated Gate Bipolar Transistor (IGBT) manufactured by STMicroelectronics. This component is designed using advanced PowerMESH™ technology and features an internally clamped structure with built-in Zener diodes between the gate and collector. It is optimized for high-performance applications requiring low losses and high reliability.

Key Specifications

ParameterValue
Voltage Rating (VCE)390 V
Current Rating (IC)40 A
Package TypeTO-247 long leads
Thermal Resistance (Rth(j-c))Low thermal resistance
Energy Capability180 mJ
TechnologyAdvanced proprietary trench gate field stop structure

Key Features

  • Automotive-grade reliability and performance
  • Internally clamped IGBT with built-in Zener diodes between gate-collector
  • Low-loss operation due to advanced PowerMESH™ technology
  • Low thermal resistance for efficient heat dissipation
  • High energy capability of 180 mJ
  • TO-247 long leads package for ease of use in various applications

Applications

The STGD19N40LZ IGBT is suitable for a variety of high-power applications, including:

  • Automotive systems such as electric vehicles, hybrid vehicles, and automotive power supplies
  • Industrial power supplies and motor drives
  • Renewable energy systems like solar and wind power inverters
  • High-power switching and power conversion systems

Q & A

  1. What is the voltage rating of the STGD19N40LZ IGBT?
    The voltage rating of the STGD19N40LZ IGBT is 390 V.
  2. What is the current rating of the STGD19N40LZ IGBT?
    The current rating of the STGD19N40LZ IGBT is 40 A.
  3. What package type does the STGD19N40LZ come in?
    The STGD19N40LZ comes in a TO-247 long leads package.
  4. What technology is used in the STGD19N40LZ?
    The STGD19N40LZ uses advanced PowerMESH™ technology and a proprietary trench gate field stop structure.
  5. What is the thermal resistance of the STGD19N40LZ?
    The STGD19N40LZ has low thermal resistance for efficient heat dissipation.
  6. What is the energy capability of the STGD19N40LZ?
    The energy capability of the STGD19N40LZ is 180 mJ.
  7. What are some typical applications for the STGD19N40LZ?
    The STGD19N40LZ is used in automotive systems, industrial power supplies, renewable energy systems, and high-power switching and power conversion systems.
  8. Is the STGD19N40LZ automotive-grade?
    Yes, the STGD19N40LZ is an automotive-grade IGBT.
  9. What are the built-in features of the STGD19N40LZ?
    The STGD19N40LZ has built-in Zener diodes between the gate and collector.
  10. Where can I find detailed specifications for the STGD19N40LZ?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component suppliers like Mouser Electronics.

Product Attributes

IGBT Type:- 
Voltage - Collector Emitter Breakdown (Max):390 V
Current - Collector (Ic) (Max):25 A
Current - Collector Pulsed (Icm):40 A
Vce(on) (Max) @ Vge, Ic:1.5V @ 4.5V, 10A
Power - Max:125 W
Switching Energy:- 
Input Type:Logic
Gate Charge:17 nC
Td (on/off) @ 25°C:650ns/13.5µs
Test Condition:300V, 10A, 1kOhm, 5V
Reverse Recovery Time (trr):- 
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
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