Overview
The STGB20M65DF2 is a trench gate field-stop Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics. This device is part of the M series IGBTs, known for their optimal balance between inverter system performance and efficiency. The STGB20M65DF2 features advanced proprietary trench gate field-stop structure, making it suitable for high-performance applications requiring low loss and short-circuit functionality.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCE) | 650 | V |
| Continuous Collector Current at TC = 25 °C | 40 | A |
| Continuous Collector Current at TC = 100 °C | 20 | A |
| Pulsed Collector Current | 80 | A |
| Gate-Emitter Voltage (VGE) | ±20 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 20 A | 1.55 | V |
| Gate Threshold Voltage (VGE(th)) | 5-7 | V |
| Total Dissipation at TC = 25 °C | 166 | W |
| Thermal Resistance Junction-Case (RthJC) IGBT | 0.9 | °C/W |
| Thermal Resistance Junction-Ambient (RthJA) | 62.5 | °C/W |
| Operating Junction Temperature Range | -55 to 175 | °C |
| Storage Temperature Range | -55 to 150 | °C |
| Turn-on Delay Time (td(on)) | 26 ns | ns |
| Current Rise Time (tr) | 10.8 ns | ns |
| Total Gate Charge (Qg) | 63 nC | nC |
Key Features
- High Short-Circuit Withstand Time: The STGB20M65DF2 is designed to handle short-circuit conditions effectively.
- Low Collector-Emitter Saturation Voltage (VCE(sat)): Typically 1.55 V at IC = 20 A, contributing to low power losses.
- Tight Parameters Distribution: Ensures safer paralleling operations.
- Low Thermal Resistance: Enhances heat dissipation efficiency.
- Soft and Fast Recovery Antiparallel Diode: Reduces switching losses and improves overall system performance.
Applications
- Motor Control: Suitable for motor drive applications due to its high efficiency and reliability.
- UPS (Uninterruptible Power Supplies): Used in UPS systems for their ability to handle high currents and voltages efficiently.
- PFC (Power Factor Correction): Ideal for PFC circuits in power supplies to improve power factor and reduce harmonic distortion.
- General-Purpose Inverters: Applicable in various inverter systems requiring low-loss and high-performance IGBTs.
Q & A
- What is the maximum collector-emitter voltage of the STGB20M65DF2?
The maximum collector-emitter voltage (VCE) is 650 V.
- What is the continuous collector current at 25 °C and 100 °C?
The continuous collector current is 40 A at 25 °C and 20 A at 100 °C.
- What is the typical collector-emitter saturation voltage (VCE(sat))?
The typical VCE(sat) is 1.55 V at IC = 20 A.
- What is the maximum junction temperature of the STGB20M65DF2?
The maximum junction temperature (TJ) is 175 °C.
- What are the key features of the STGB20M65DF2?
The key features include high short-circuit withstand time, low VCE(sat), tight parameters distribution, low thermal resistance, and a soft and fast recovery antiparallel diode.
- In what applications is the STGB20M65DF2 commonly used?
It is commonly used in motor control, UPS, PFC, and general-purpose inverters.
- What is the thermal resistance junction-case (RthJC) of the IGBT?
The thermal resistance junction-case (RthJC) is 0.9 °C/W.
- What is the total gate charge (Qg) of the STGB20M65DF2?
The total gate charge (Qg) is typically 63 nC.
- What is the turn-on delay time (td(on)) of the STGB20M65DF2?
The turn-on delay time (td(on)) is typically 26 ns.
- What package type is the STGB20M65DF2 available in?
The STGB20M65DF2 is available in a D²PAK package.
