Overview
The STGB19NC60KDT4 is a high-performance Insulated Gate Bipolar Transistor (IGBT) developed by STMicroelectronics using advanced PowerMESH™ technology. This device is designed to offer an excellent trade-off between switching performance and low on-state behavior, making it suitable for a variety of high-power applications. The IGBT is co-packaged with an ultrafast free-wheeling diode, enhancing its overall efficiency and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCES) | 600 | V |
| Continuous Collector Current at TC = 25 °C | 35 | A |
| Continuous Collector Current at TC = 100 °C | 20 | A |
| Pulsed Collector Current | 75 | A |
| Gate-Emitter Voltage | ±20 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.75 | V |
| Short-Circuit Withstand Time | 10 | μs |
| Operating Junction Temperature Range | -55 to 150 | °C |
| Package | D²PAK | |
| RoHS Compliance | Ecopack2 |
Key Features
- Low on voltage drop (VCE(sat))
- Low CRES / CIES ratio (no cross-conduction susceptibility)
- Short-circuit withstand time of 10 μs
- IGBT co-packaged with ultrafast free-wheeling diode
- Advanced PowerMESH™ technology for excellent switching performance and low on-state behavior
Applications
- High frequency inverters
- Motor drives
Q & A
- What is the collector-emitter voltage rating of the STGB19NC60KDT4?
The collector-emitter voltage rating is 600 V.
- What is the maximum continuous collector current at 25 °C?
The maximum continuous collector current at 25 °C is 35 A.
- What is the short-circuit withstand time of the STGB19NC60KDT4?
The short-circuit withstand time is 10 μs.
- What type of diode is co-packaged with the IGBT?
The IGBT is co-packaged with an ultrafast free-wheeling diode.
- What is the operating junction temperature range of the STGB19NC60KDT4?
The operating junction temperature range is -55 to 150 °C.
- What is the package type of the STGB19NC60KDT4?
The package type is D²PAK.
- Is the STGB19NC60KDT4 RoHS compliant?
- What are the typical applications of the STGB19NC60KDT4?
- What technology is used in the development of the STGB19NC60KDT4?
- What is the maximum collector-emitter saturation voltage (VCE(sat))?
CE(sat)) is 2.75 V.
